akin akturk - ECE - University of Maryland

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[8] A. Akturk, N. Goldsman, G. Metze, “An efficient inclusion of self-heating and quantum effects in SOI device simulations,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 99- 100 (2005). [9] A. Akturk, N. Goldsman, N. Dhar, P. S. Wijewarnasuriya, “Modeling the temperature dependence and optical response of HgCdTe diodes,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 70-71 (2005). [10] G. Pennington, A. Akturk, J. M. McGarrity, N. Goldsman, “Transport properties of wide bandgap nanotubes,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 346-347 (2005). [11] Z. Dilli, N. Goldsman, A. Akturk, “An impulse-response based methodology for modeling complex interconnect networks,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 64-65 (2005). [12] A. Akturk, G. Pennington, N. Goldsman, “Numerical device analysis of all-around gate carbon nanotube (CNT) embedded field-effect transistors (FETs),” 16 th Euro. Conf. on Diamond, Diamond-Like Mat., Carbon Nanotubes and Nitrides, [5.6.11] (2005). [13] G. Pennington, A. Akturk, N. Goldsman, “Low-field electronic transport in single-walled semiconducting carbon nanotubes,” 16 th Euro. Conf. on Diamond, Diamond-Like Mat., Carbon Nanotubes and Nitrides, [15.5.2] (2005). [14] A. Akturk, N. Goldsman, G. Metze, “Coupled simulation of device performance and heating of vertically stacked three-dimensional integrated circuits,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 51-54 (2005). [15] A. Akturk, G. Pennington, N. Goldsman, “Device behavior modeling for carbon nanotube silicon-on-insulator MOSFETs,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 115-118 (2005). [16] G. Pennington, A. Akturk, N. Goldsman, “Low-field transport model for semiconducting carbon nanotubes,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 87-90 (2005). [17] G. Pennington, A. Akturk, N. Goldsman, “Phonon-limited transport in carbon nanotubes using the Monte Carlo method,” Proc. of Int. Workshop on Computational Electronics (IWCE), 24-27 (2004). [18] A. Akturk, G. Pennington, N. Goldsman, “Numerical performance analysis of carbon nanotube (CNT) embedded MOSFETs,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 153-156 (2004).
[19] A. Akturk, G. Pennington, N. Goldsman, “Temperature dependent mobility model for singlewalled zig-zag carbon nanotubes (CNTs),” Proc. of 8 th Int. Conf. on Nanometer-Scale Science and Tech. (NANO-8), 728-729[1846] (2004). [20] A. Akturk, G. Pennington, N. Goldsman, “Characterisation of nanoscale carbon nanotube (CNT) embedded CMOS inverters,” Proc. of 8 th Int. Conf. on Nanometer-Scale Science and Tech. (NANO-8), 769-770[413] (2004). [21] A. Akturk, L. Parker, N. Goldsman, G. Metze, “Mixed-mode simulation of non-isothermal quantum device operation and full-chip heating,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 508-509 (2003). [22] G. Pennington, A. Akturk, N. Goldsman, “Electron mobility of a semiconducting carbon nanotube,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 412-413 (2003). [23] A. Akturk, N. Goldsman, G. Metze, “Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 311-314 (2003). [24] A. Akturk, G. Pennington, N. Goldsman, “Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel”, Proc. of 3 rd IEEE Conf. on Nanotechnology (IEEE-NANO) 1, 24-27 (2003). [25] A. Akturk, N. Goldsman, G. Metze, “Faster CMOS inverter switching obtained with channel engineered asymmetrical halo implanted MOSFETs”, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 118-121 (2001). INVITED TALKS [1] A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G. Esen, A. Manasson, M. Fuhrer, “Carbon nanotube devices for sensing and communications applications,” Proc. of 211 th Electrochemical Society (ECS) Meeting H4, 1052 (2007). [2] N. Goldsman, A. Akturk, “Analysis and design of key phenomena in electronics: nanostructures and devices,” Proc. of Int. Society for Optical Eng. (SPIE) Conf., 637000I (2006). HONORS & AWARDS - Full teaching and research assistantships (tuition and stipend) during the M.S. and the Ph. D., Electrical & Computer Engineering, University of Maryland, College Park. 1999-2006 - Graduated 6 th of the undergraduate class at Bilkent University, Ankara, Turkey. 1999 - Merit-based scholarship, Netas-Northern Electric Telecommunication Co., Istanbul, Turkey. 1998
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