jb_1989.pdf

Kopetzky, W.; Schwarz, R.: Two-dimensional simulation of surface and interface effects on
the photocurrent in a-Si:H films. - In: Proc. of the 9th E.C. Photovoltaic Solar Energy
Conf., Freiburg, 25.-29. Sept. 1989. Eds.: W. Palz et al. Dordrecht: Kluwer, 1989, S. 1024-
1027.
Koynov, S.; Petrova-Koch, V.; Brandt, M.S.; Hollenbach, R.; Toneva, A.: Abstraction
method for deposition of a-Si:H. - In: Proc. 19th Int. Conf. on the Physics of Semiconductors,
Warsaw, Aug. 15-19, 1988. Ed.: W. Zawadzki. Warsaw: Inst. of Physics, 1988,
S. 1657-1660.
Muschik, T.; Schwarz, R.; Curtins, H.; Favre, M.: Photoluminescence quenching by
electric fields in hydrogenated amorphous silicon. - In: Conf. Rec. 20th IEEE Photovoltaic
Specialists Conf., Las Vegas, Sept. 26-30, 1988. New York: IEEE, 1988, S. 191-195.
Schwarz, N.; Müller, F.; Tempel, G.; Koch, F.; Weimann, G.: Resonant excitation of a
layer of Si donors in GaAs. - In: Semicond. sci. and technol. 4 (1989) S. 571-573.
Schwarz, R.; Asenov, A.M.; Goedecker, S.; Chitate, E.: Carrier diffusion and drift in a-Si:H
Schottky barrier devices. - In: Proc. of the 8th E.C. Photovoltaic Solar Energy Conf.,
Florence, May 9-13, 1988. Eds.: I. Solomon et al. Dordrecht: Kluwer, 1988, S. 954-958.
Sizmann, R.; Chu, J.; Wollrab, R.; Koch, F.; Ziegler, J.; Maier, H.: Spin resonance in
inversion layer electrons in the electrically spin-split subbands on HgCdTe. - In: Proc.
19th Int. Conf. on the Physics of Semiconductors, Warsaw, Aug. 15-19, 1988. Ed.: W.
Zawadzki. Warsaw: Inst. of Physics, 1988, S. 471-474.
Sizmann, R.; Zass, M.; Koch, F.: Resonant excitation in the interacting subband-valence
band system of narrow-gap semiconductors. - In: Workbook EP2DS8 Grenoble, Sept. 4-8,
1989, S. 176-180.
Wetzel, C.; Petrova-Koch, V.; Zachau, M.; Koch, F.; Grützmacher, D.: Photothermal
deflection spectroscopy as a method for studying quantum-well heterostructures. - In: Superlatt.
and microstruct. 6 (1989) S. 99-102.
Wollrab, R.; Sizmann, R.; Koch, F.; Ziegler, J.; Maier, H.: Spin splitting of the electron
subbands in the electrostatic interface potential on HgCdTe. - In: Semicond. sci. and
technol. 4 (1989) S. 491-494.
Ye, Q.; Zrenner, A.; Koch, F.: Interface improvement by hot carrier degradation - forming
gas annealing cycle. - In: Proc. 173rd Meet. of the Electrochemical Soc., Atlanta, Georgia,
May 15-20, 1988. New York: Plenum Pr., 1988, S. 537-544.
Ye, Q.; Zrenner, A.; Koch, F.; Ploog, K.: Electronic transport of the δ-doping layer in the
dilute density limit. - In: Semicond. sci. and technol. 4 (1989) S. 500-502.
Zachau, M.; Helgesen, P.; Kux, A.; Koch, F.; Grützmacher, D.; Meyer, R.; Jürgensen, H.;
Balk, P.: Photoconductivity in InGaAsP/InP-superlattices: subband-continuum transitions
and band offsets. - In: Superlatt. and microstruct. 5 (1989) S. 19-21.
Zrenner, A.; Koch, F.: The δ-doping layer. Electronic properties of a Si dopant layer in the
high density limit. - In: Proc. of the 3rd Int. Conf. Shallow Impurities in Semiconductors,
Linköping, 10.-12. Aug. 1988. Ed.: B. Monemar. Bristol: IOP Publ., 1988, S. 1-10. (Inst.
of Phys. conf. ser.; 95)
Zrenner, A.; Koch, F.; Leotin, J.; Goiran, M.; Ploog, K.: Side-by-side existence of the
quantum Hall effect and the magnetic-field-induced metal-insulator transition. - In: Semicond.
sci. and technol. 3 (1988) S. 1132-1135.
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