In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
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<strong>In</strong>--<strong>situ</strong> <strong>In</strong> <strong>situ</strong> <strong>Growth</strong> <strong>Growth</strong> <strong>Monitoring</strong> <strong>Monitoring</strong> <strong>of</strong> <strong>of</strong><br />
<strong>GaN</strong> <strong>GaN</strong> on on <strong>AlN</strong>/ <strong>AlN</strong>/6H<br />
6H--SiC SiC<br />
�� <strong>GaN</strong> on SiC substrate using conventional insulating <strong>AlN</strong> buffer<br />
��<strong>AlN</strong> <strong>AlN</strong> buffer layer thickness and <strong>GaN</strong> morphology evolution<br />
��Wafer Wafer bending effect for thick <strong>GaN</strong> growth<br />
<strong>GaN</strong> on <strong>AlN</strong>/6H-SiC substrate<br />
PyroTemp<br />
DetReflec<br />
<strong>AlN</strong> <strong>GaN</strong><br />
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000<br />
0<br />
13000<br />
Time (sec)<br />
Center Center Center Center for for for for Compound Compound Compound Compound Semiconductors Semiconductors Semiconductors<br />
Semiconductors / / Advanced Advanced Materials Materials and and Devices Devices Group<br />
Group<br />
0.16<br />
0.14<br />
0.12<br />
0.1<br />
0.08<br />
0.06<br />
0.04<br />
0.02
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