In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT
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<strong>EpiTT</strong> <strong>EpiTT</strong> for for <strong>In</strong>--<strong>situ</strong> <strong>In</strong> <strong>situ</strong> and and Ex--<strong>situ</strong> Ex <strong>situ</strong> MOCVD MOCVD<br />
<strong>Growth</strong> <strong>Growth</strong> <strong>Monitoring</strong><br />
<strong>Monitoring</strong><br />
�� Emissivity-corrected Emissivity corrected temperature and optical reflectance<br />
�� <strong>Monitoring</strong> in sync with wafer rotation<br />
�� individual wafer monitoring on each pocket <strong>of</strong> susceptor<br />
�� Probing area adjustable (2” (2 sapphire and 10X10mm 2 <strong>GaN</strong> sub)<br />
�� <strong>In</strong>--<strong>situ</strong> <strong>In</strong> <strong>situ</strong> monitoring<br />
�� Surface “actual actual” temperature between pockets and susceptors for same type<br />
<strong>of</strong> substrates<br />
�� Surface morphology from reflectance<br />
��Morphology Morphology evolution, recovery, and degradation on a selected layer layer<br />
or<br />
an overall structure<br />
�� Wafer bending from reflectance oscillation (damping)<br />
�� Approximate growth rate and etch-back etch back rate from reflectance oscillation<br />
period<br />
�� Etching back effect monitoring<br />
�� Ex--<strong>situ</strong> Ex <strong>situ</strong> monitoring<br />
�� <strong>Growth</strong> rate calculation based on simulation/fitting<br />
Center Center Center Center for for for for Compound Compound Compound Compound Semiconductors Semiconductors Semiconductors<br />
Semiconductors / / Advanced Advanced Materials Materials and and Devices Devices Group<br />
Group
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