In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT

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In--situ In situ Growth Growth Monitoring Monitoring of of GaN GaN on on n--AlGaN:Si/n n AlGaN:Si/n--6H 6H--SiC SiC �� GaN on SiC using conducting nn-AlGaN:Si AlGaN:Si (Al~0.1) buffer layer for vertical device geometry ��AlGaN AlGaN and GaN morphology evolution: in--situ in situ monitoring helpful for growth condition optimization 1100 1000 900 800 700 600 500 PyroTemp GaN on AlGaN:Si/6H-SiC substrate AlGaN grading GaN DetReflec 400 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 1300 Time (sec) Center Center Center Center for for for for Compound Compound Compound Compound Semiconductors Semiconductors Semiconductors Semiconductors / / Advanced Advanced Materials Materials and and Devices Devices Group Group
Summary Summary �� We have used the Laytec EpiTT to monitor the growth of a variety of III-N III N structures on SiC, GaN, AlN, and sapphire substrates �� Monitoring in real time permits a rapid evaluation of growth conditions �� Homoepitaxial growth on GaN and AlN substrates does not produce significant oscillations (as expected) Center Center Center Center for for for for Compound Compound Compound Compound Semiconductors Semiconductors Semiconductors Semiconductors / / Advanced Advanced Materials Materials and and Devices Devices Group Group
Page 1 and 2: In--situ In situ Monitoring Monitor
Page 3 and 4: Thomas Thomas Swan Swan MOCVD MOCVD
Page 5 and 6: LayTec LayTec EpiTT EpiTT Optical O
Page 7 and 8: Example Example Application: Applic
Page 9 and 10: In--situ In situ Growth Growth Moni
Page 11 and 12: In--situ In situ Growth Growth Moni
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In-situ Monitoring of AlGaN/GaN/AlN Growth Using LayTec EpiTT

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