Cypress Semiconductor Preliminary Product Qualification Report

Cypress Semiconductor
Preliminary Product Qualification Report
CY8C21001
CY8C21234
CY8C21334
CY8C21434
CY8C21534
CY8C21634
CY7C60323
CY7C60333
QTP# 062509 VERSION 0.0
August 2006
PSoC Device Family
S4AD-5 Technology, GSMC
PSoC Mixed Signal Array
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 2 of 8
Device: CY8C24x94 August 2006
Mira Ben-Tzur Sabbas Daniel
Director of Reliability EVP Quality
(408) 943-2675 (408) 943-2685

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 3 of 8
Device: CY8C24x94 August 2006
Qual
Report
062509
PRODUCT QUALIFICATION HISTORY
Description of Qualification Purpose
Date
Comp
PSoC 8C21001 Neutron Device Product Family Transfer to Fab 5 GSMC on previously
qualified SONOS S4AD-5
Active

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 4 of 8
Device: CY8C24x94 August 2006
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: PSoC 8C21001 Neutron Device Product Family Transfer to Fab 5 GSMC on previously qualified
SONOS S4AD-5
Marketing Part #: CY8C21001, CY8C21234, CY8C21334, CY8C21434, CY8C21534, CY8C21634
Device Description: 3.3V and 5V Industrial 24Mhz Programmable System on Chip available in 16 lead SOIC, 20 / 28 lead
SSOP, and 32 lead QFN
Cypress Division: Cypress Semiconductor - Consumer and Computation Division
Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A
What ID markings on Die: 8C21001A
TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5
Number of Metal Layers: 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN
Passivation Type and Materials: 7,000A TeOs / 6,000A Si3N4
Free Phosphorus contents in top glass layer (%): 0%
Number of Transistors in Device: 100,000
Number of Gates in Device 10000
Metal 2: 500A TiN/8,000A Al/500A TiN
Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm
Gate Oxide Material/Thickness (MOS): SiO2 / 110A
Name/Location of Die Fab (prime) Facility: GSMC/Shanghai-China
Die Fab Line ID/Wafer Process ID: S4AD-5
PACKAGE AVAILABILITY
PACKAGE ASSEMBLY SITE FACILITY
32-Lead QFN SEOL-L
16-Lead SOIC OSE Taiwan (TAIWN-T)
20-Lead SSOP Cypress Philippines (CML-RA)
28-Lead SSOP SEOL-L
Note: Package Qualification details upon request.

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 5 of 8
Device: CY8C24x94 August 2006
MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name: 28-Lead SSOP
Mold Compound Name/Manufacturer: G600 / Sumitomo
Mold Compound Flammability Rating: VO-UL94
Oxygen Rating Index: None
Lead Frame Material: Copper
Lead Finish, Composition / Thickness: Pure Sn
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method: 100% Saw
Die Attach Supplier: Ablestik
Die Attach Material: Ablebond 8290
Die Attach Method: Epoxy
Bond Diagram Designation: 001-06220
Wire Bond Method: Thermosonic
Wire Material/Size: Au. 1.0mil
Thermal Resistance Theta JA °C/W: 95°C/W
Package Cross Section Yes/No: N/A
Assembly Process Flow: 001-08552
Name/Location of Assembly (prime) facility: Seoul-Korea (L)
MSL Level 3
Reflow Profile 260C
Test Location: CML-R
ELECTRICAL TEST / FINISH DESCRIPTION
Note: Please contact a Cypress Representative for other packages availability.

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 6 of 8
Device: CY8C24x94 August 2006
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test Test Condition
(Temp/Bias)
High Temperature Operating Life Early
Failure Rate
Result
P/F
Dynamic Operating Condition, Vcc Max=5.5V, 125°C ww34
Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 1
Pressure Cooker
Data Retention 150°C ± 5°C No Bias
168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C
121°C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity Level 1
168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C
ww34
ww34
ww34

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 7 of 8
Device: CY8C24x94 August 2006
RELIABILITY FAILURE RATE SUMMARY
Stress/Test Device Tested/
Device Hours
High Temperature Operating Life
Early Failure Rate 1
1, 2
High Temperature Operating Life
Long Term Failure Rate
#
Fails
Activation
Energy
Thermal 3
A.F
Failure
Rate
Devices N/A N/A ww34
DHRs 0 .7 55 FIT**
1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
2 Chi-squared 60% estimations used to calculate the failure rate.
3 Thermal Acceleration Factor is calculated from the Arrhenius equation
Where:
**Insufficient data to calculate Fit Rate.
AF = E ⎡
exp ⎢
⎣ k
A
1 ⎡ 1 ⎤ ⎤
⎢ - ⎥ ⎥
⎣T
2 T 1⎦
⎦
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10 -5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device
at use conditions.

Cypress Semiconductor QTP# 060605, V, 0.0
PSoC Device Family, S4AD-5, GSMC Page 8 of 8
Device: CY8C24x94 August 2006
Reliability Test Data
QTP #: 062509
Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A) 610642654 SEOL-L 500 256 ww32
CY8C21534 (8C21534A) 610642654 SEOL-L 500 256 ww32
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A) 610642654 SEOL-L 96 1000 ww34
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1)
CY8C21534 (8C21534A) 610642654 SEOL-L 168 45 0
STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1)
CY8C21534 (8C21534A) 610642654 SEOL-L 300 50 0