Very High Power PEBB technology - VDE

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Very High Power PEBB technology BRUECKNER Thomas Power Semiconductor Technology Silicon based power semiconductors are an essential key component of the PEBB. It is therefore important, that the basic properties of the commonly used power semiconductors are understood. The low-voltage IGBT module The low-voltage IGBT module is used in low-voltage applications up to few megawatts with system voltages in the range of 240V up to 690V. With its typical dynamic blocking voltage in the range of 600V up to 1700V it is the dominant power semiconductor in these applications. The typical PWM carrier frequencies in the higher power range are in the range of a few kHz, typically 3 – 5 kHz. The dominant applications of the low-voltage IGBT module are low-voltage AC drives, where these power semiconductors are used in high volumes. Econopack /SKiiP/LoPak Module 1200 V und 1700 V Maximum blocking voltage Fig. 2: The low-voltage IGBT module The medium-voltage-IGBT module IHV / HiPak Module (E1/E2) Turn off 3x rating current (3300V IGBT) 75 – 450 A Maximum phase current Switching frequency (f PWM) 1200 V: Typical 3..5 kHz Integration Fig. 3: The medium-voltage IGBT module Electrical insulation Up to six switching devices Loss-optimized Soft Punch Through or Trench Copper base plate (EconoPack) Limited in thermal cycles 2500 V, 3300 V and 6500 V Maximum blocking voltage 1500 A, 1200 A, 600 A Maximum phase current Switching frequency (f PWM ) 3300 V: Typical 1..2 kHz Integration Electrical insulation Up to 2 devices (dual pack) Loss-optimized Soft Punch Through or Trench AlSiC base plate Traction The medium-voltage IGBT module with dynamic blocking voltages in the range of 2500 V to 6500V is used in medium-voltage applications up to a few megawatts. The typical PWM carrier frequencies in these high power applications are in the range of 1 to 2 kHz. The dominant application for this power semiconductor is traction propulsion. EPE 2005 - Dresden ISBN : 90-75815-08-5 P.4
Very High Power PEBB technology BRUECKNER Thomas The medium-voltage-IGCT Presspack The medium-voltage IGCT [4] is a presspack device with its typical dynamic blocking voltage in the range of 4500V to 6000V. It consists of one bipolar wafer only, which has structures like a GTO device. It can therefore be manufactured on more simple wafer fabs, which already achieve low production costs with lower production volumes owing to the substantially lower investment costs. Additionally the one wafer solution needs inherently less edge termination area, than comparable solutions based on multiple small wafers. The IGCT is used in medium-voltage applications up to 100 MW and higher. The typical PWM carrier frequencies in high power applications are in the range of as low as 50 Hz up to 1 kHz. The dominant application of the medium voltage IGCT are medium-voltage AC drives, where these power semiconductors are used in high volumes. Today, the IGCT is the power semiconductor, which is best established in all high power applications. It has the most impressive reference list and is employed in the highest number of installations. As a thyristor-based power semiconductor, the IGCT has very low on-state losses. Owing to its integrated gate drive the turn-off occurs in an inherently robust transistor mode. Additionally, the presspack housing has the necessary attribute, that it fails short and any plasma is contained within the power semiconductor housing. This feature allows the implementation of robust and reliable protection concepts, which are essential for very high power applications. 4 3 2 1 0 -10 -20 V g (V) IGCT Presspack V d (kV) I Itg tg q V dm anode current I a thyristor x transistor starts to block anode voltage V d gate voltage V g I a (kA) 1.5 2.0 2.5 3.0 3.5 t (µ s) 4 1 3 2 0 4500 V and 6000 V Maximum blocking voltage 150 – 2000 A Maximum phase current Switching frequency (f PWM ) Typical 0.5 – 1 kHz Integration Gate unit Loss-optimized Transparent Anode Thyristor-based Presspack Short circuit di/dt – snubber Fig. 4.: The medium-voltage IGCT presspack The medium-voltage IGBT Presspack The medium-voltage IGBT presspack with a typical dynamic blocking voltage of 2500V up to 4500V is used mainly in high voltage DC transmission up to a few 100 MW. The typical PWM carrier frequencies are in the range of 0.5 – 2 kHz. The IGBT presspack consists of multiple IGBT wafers, each needing its own small presspack structure. The IGBT chips are manufactured on the newest generation of IGBT wafer fabs, which are able to process the much finer structure required for this type of power semiconductor. When considering a power semiconductor switching at elevated frequencies, i.e. above 3 to 5 times the fundamental frequency, the IGBT has the advantage that the gate drive needs a smaller power supply. This is particularly beneficial in higher voltage applications, as the energy extraction on potential is simpler. This is one of the main reasons, that the IGBT presspack technology has been introduced in high voltage DC transmission systems, i.e. HVDC light based on voltage source converter technology. EPE 2005 - Dresden ISBN : 90-75815-08-5 P.5
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