Very High Power PEBB technology - VDE
Very High Power PEBB technology - VDE
Very High Power PEBB technology - VDE
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<strong>Very</strong> <strong>High</strong> <strong>Power</strong> <strong>PEBB</strong> <strong>technology</strong> BRUECKNER Thomas<br />
battery <strong>technology</strong> to enhance grid stability or to reduce power fluctuations.<br />
• 22 MVA Dynamic Voltage Restorers to safeguard the highly critical processes of a<br />
semiconductor plant.<br />
Fig. 9: Back-to-back intertie based on the NPC IGCT <strong>PEBB</strong><br />
The New ANPC IGCT <strong>PEBB</strong><br />
Limitations of the NPC IGCT <strong>PEBB</strong><br />
The maximum output power of the NPC IGCT <strong>PEBB</strong> is limited mainly by two factors, i.e.<br />
• the safe operation area of the IGCT and<br />
• the thermal management of the power semicon-ductors.<br />
The maximum power of the conventional NPC IGCT <strong>PEBB</strong> is limited by the maximum turn-off<br />
capability of the IGCT and the corresponding companion diode. The maximum turn-off capability linked<br />
to the 4 inch wafer <strong>technology</strong> is in the range of 4000A at a DC voltage of 2800 Vdc.<br />
At the same time, in a conventional NPC converter with diodes clamped to the neutral point, the loading<br />
of the outer and the inner IGCT and corresponding antiparallel diodes is different, for example, at<br />
• a power factor equal to one<br />
• a high modulation and<br />
• delivering active power from DC to AC<br />
the outer IGCTs (S1, S4) of the NPC IGCT <strong>PEBB</strong> have reached their thermal limit, i.e. the thermal<br />
resistance of the IGCT and the water cooling circuit will not allow any higher losses. On the other side the<br />
inner IGCTs (S2, S3) are thermally loaded much less, as their losses are caused by conduction losses only.<br />
In case of inverse energy direction the same happens with the corresponding antiparallel diodes.<br />
The new technologies introduced with the ANPC IGCT <strong>PEBB</strong><br />
To further improve the power density and the cost competitiveness of the leading IGCT <strong>PEBB</strong> <strong>technology</strong><br />
the ANPC IGCT <strong>PEBB</strong> has been developed, which is able to deliver up to 16 MVA output power. The<br />
main new technologies introduced to achieve higher output powers are:<br />
• increased SOA of the 91mm asymmetric IGCT (4 inch <strong>technology</strong>) and of the antiparallel diode<br />
up to more than 6000A [5] and<br />
• improved thermal management by means of the Active NPC topology [6].<br />
EPE 2005 - Dresden ISBN : 90-75815-08-5 P.8
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