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the Engineers' Guide to VME, VPX & VXS 2013 - Subscribe

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Tackling <strong>the</strong> Challenge of Building Smaller,<br />

Lighter, and More Efficient Componentbased<br />

Avionics with CFD<br />

Component <strong>the</strong>rmal issues have <strong>to</strong> be managed in order<br />

<strong>to</strong> maintain high reliability in military aircraft and<br />

avionics environments. The ratio and tradeoff of size,<br />

weight, and power (SWaP) is a crucial system design<br />

consideration in modern defense systems. As aircraft<br />

are fitted with an increasing amount of electronics and<br />

with more components, <strong>the</strong>y become heavier—and<br />

more weight can mean less time in <strong>the</strong> target zone. But<br />

<strong>the</strong>y also become hotter as size density increases. The<br />

<strong>the</strong>rmal behavior can also vary from component vendor<br />

<strong>to</strong> vendor but also over <strong>the</strong> component aging process.<br />

This is due <strong>to</strong> <strong>the</strong> degradation of <strong>the</strong> materials used in<br />

<strong>the</strong> component and <strong>the</strong> influence of <strong>the</strong>rmal management<br />

over <strong>the</strong> lifetime of <strong>the</strong> component.<br />

A good understanding of semiconduc<strong>to</strong>r components’<br />

<strong>the</strong>rmal behavior is important because it is crucial <strong>to</strong><br />

<strong>the</strong> optimum <strong>the</strong>rmal design for a low SWaP ratio. Insufficient<br />

understanding of a component can lead not only<br />

<strong>to</strong> an oversized cooling system but also <strong>to</strong> a bad choice<br />

of <strong>the</strong> selected components intended for <strong>the</strong> lifetime system use.<br />

Thermal Characterization of Semiconduc<strong>to</strong>r Components<br />

A good way <strong>to</strong> begin formal component characterization is <strong>to</strong> create<br />

a “smart” implementation of <strong>the</strong> static test version of <strong>the</strong> Joint Electron<br />

Devices Engineering Council (JEDEC) JESD51-1 electrical test<br />

method [1] that allows for continuous measurement during a heating<br />

or cooling transient.<br />

The characterization method uses <strong>the</strong> temperature sensitivity of<br />

<strong>the</strong> semiconduc<strong>to</strong>r component. This sensitivity has <strong>to</strong> be measured<br />

before <strong>the</strong> actual characterization can begin, and it should be done<br />

according <strong>to</strong> <strong>the</strong> JESD51-14 standard <strong>to</strong> record <strong>the</strong> cooling curve of<br />

<strong>the</strong> component.<br />

Once <strong>the</strong> measured temperature sensitivity parameters (TSP) are<br />

obtained, <strong>the</strong> component can be characterized by powering up <strong>the</strong><br />

device (heating it) with PH [Watt] until a steady state is reached.<br />

Once <strong>the</strong> junction temperature TJ is constant, <strong>the</strong> heating current<br />

is switched off <strong>to</strong> a lower measuring current that creates a low<br />

SPECIAL FEATURE<br />

Computational Fluid Dynamics software helps defense systems designers doubly:<br />

it aids in optimizing component SWaP, and models device <strong>the</strong>rmal behavior across<br />

time and vendors.<br />

By Boris Marovic, Product Marketing Manager,<br />

Men<strong>to</strong>r Graphics<br />

Figure 1: Cooling curve of a sample component.<br />

measuring power PM [Watt]. The measuring current is negligible<br />

compared <strong>to</strong> <strong>the</strong> heating current. This sharp power step introduces<br />

<strong>the</strong> cooling process and is recorded until a steady state is reached.<br />

From <strong>the</strong> temperature sensitivity of <strong>the</strong> component and <strong>the</strong> lower<br />

steady state temperature, ideally realized with a cold plate, <strong>the</strong> transient<br />

cooling curve is created as shown in Figure 1. The temperature<br />

difference ΔT (Kelvin) is derived by <strong>the</strong> temperature sensitivity of<br />

<strong>the</strong> component; and <strong>the</strong> <strong>the</strong>rmal resistance of <strong>the</strong> component can be<br />

calculated as shown in <strong>the</strong> equation: Rth = ΔT/(PH ‒ PM).<br />

From <strong>the</strong> recorded cooling curve, a structure function can be<br />

derived as shown in Figure 2. This structure function shows <strong>the</strong>rmal<br />

resistance and capacitance of <strong>the</strong> single component layers from<br />

junction <strong>to</strong> environment. The vertical sections of <strong>the</strong> curve show<br />

<br />

[K/W] materials such as metallic layers in <strong>the</strong> component structure;<br />

whereas horizontal lines show higher <strong>the</strong>rmal resistance layers such<br />

as die attach, glue, grease, and o<strong>the</strong>r <strong>the</strong>rmal interface materials<br />

(TIM), PCB layers, and so on.<br />

www.eecatalog.com/vme 21

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