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4 Coulomb blockade

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74 4 <strong>Coulomb</strong> <strong>blockade</strong><br />

The average number of electrons is<br />

〈n〉 = <br />

np(n) = 1 <br />

<br />

n exp −<br />

Z<br />

E∗ <br />

(n)<br />

. (4.28)<br />

T<br />

n<br />

The results of calculation at different temperatures are shown in Fig. 4.3.<br />

We see, quite obviously, that the steps are smeared with temperature and<br />

disappear almost completely at T ≈ EC, in agreement with the estimate<br />

(4.6).<br />

4.3 Single-electron transistor<br />

Now we come back to a transport problem. Consider the system between two<br />

leads coupled by two weak tunneling contacts (Fig. 4.4). When there is also<br />

the third electrode (gate), the system is called single-electron transistor.<br />

The electrostatic energy of the central region is given by the same formula<br />

(4.24) with the gate charge Q ∗ determined by the combination of all voltages<br />

applied to a system and the full capacitance is<br />

n<br />

C = CG + CL + CR. (4.29)<br />

The addition energy to increase the number of electrons from n to n +1 is<br />

∆E + n (n → n +1)=E ∗ (n +1)− E ∗ (n) = e2<br />

C<br />

<br />

3<br />

2<br />

1<br />

0<br />

<br />

n + 1 Q∗<br />

+<br />

2 e<br />

-1 0 1 2 3<br />

Q /|e|<br />

*<br />

-1<br />

<br />

. (4.30)<br />

Fig. 4.3. The average number of electrons 〈n〉 in a single-electron box as a function<br />

of the gate voltage at different temperatures T = 0.01EC (steps), T = 0.1EC,<br />

T =0.3EC, T = EC (nearly linear).

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