Introduction to silicon detectors and radiation ... - IRTG Heidelberg

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Pure silicon is a semiconductor Doped Semiconductors Band model: valence and conduction bands Band gap in silicon: 1.12 eV Fermi level (at 0 K) inside band gap, conductivity through thermal excitations Properties can be changed by doping Additional energy levels in band gap Donors: creation of additional electrons Acceptors: creation of additional holes E Conduction Band E Valence Band E F electron hole Donor Level Acceptor Level IRTG Fall School 2010, Heidelberg, November 1–5, 2010, U. Husemann: Introduction (Part I) [hyperphysics.phy-astr.gsu.edu] 12
[en.wikipedia.org] Semiconductor Diodes IRTG Fall School 2010, Heidelberg, November 1–5, 2010, U. Husemann: Introduction (Part I) Diode = interface of pdoped and n-doped semiconductors: Electrons and holes recombine → depletion zone Reverse bias voltage applied → depletion zone extended 13
Page 1 and 2: Fall School of the IRTG “Developm
Page 3 and 4: Introduction
Page 5 and 6: Detector Example: ATLAS Muon Detect
Page 7 and 8: The ATLAS Inner Detector Transition
Page 10 and 11: Radiation Damage in a Silicon Detec
Page 14 and 15: Silicon Detectors at a Glance Examp
Page 17 and 18: Radiation & Performance Parameters
Page 21 and 22: N eff - effective doping concentrat
Page 24: D(E) / (95 MeV mb) 10 4 10 3 10 2 1
Page 27 and 28: Microscopic Picture: Point Defects
Page 30 and 31: Typical Laboratory Setup Probe Stat
Page 32 and 33: Defect annealing Annealing of Senso
Page 35 and 36: • Columns etched from opposite si
Page 37 and 38: Sensors with p-Type Bulk Good perfo
Page 39: The Hamburg connection Additional M

Introduction to silicon detectors and radiation ... - IRTG Heidelberg

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