Introduction to silicon detectors and radiation ... - IRTG Heidelberg

More documents

Recommendations

Info

Silicon Detectors at a Glance Example: hybrid pixel detectors Detector = semiconductor diode with pn junction in reverse bias → depletion zone Charged particles ionize detector material → electron/hole pairs induce signal 250 µm Electrical Signal – – + + – – Charged Particle + + Implants: n + doped pixels (400x50 µm 2 ) Bulk (n doped) Backplane (p + doped) Readout Chip: Amplification Digitization PbSn or Indium Balls (“bump bond”) Reverse Bias Voltage approx. 150 V IRTG Fall School 2010, Heidelberg, November 1–5, 2010, U. Husemann: Introduction (Part I) 14
Czochralski (Cz) silicon: Silicon Production Mechanisms Mono-crystal pulled out of silicon melt Cheap (standard for microelectronics) but low purity (e.g. high oxygen concentration) Float Zone (FZ) silicon: IRTG Fall School 2010, Heidelberg, November 1–5, 2010, U. Husemann: Introduction (Part I) Polycrystalline rod melted into monocrystal High purity but expensive Poly-Silicon RF Heating Coil Single-Crystal Silicon 15
Page 1 and 2: Fall School of the IRTG “Developm
Page 3 and 4: Introduction
Page 5 and 6: Detector Example: ATLAS Muon Detect
Page 7 and 8: The ATLAS Inner Detector Transition
Page 10 and 11: Radiation Damage in a Silicon Detec
Page 12 and 13: Pure silicon is a semiconductor Dop
Page 17 and 18: Radiation & Performance Parameters
Page 21 and 22: N eff - effective doping concentrat
Page 24: D(E) / (95 MeV mb) 10 4 10 3 10 2 1
Page 27 and 28: Microscopic Picture: Point Defects
Page 30 and 31: Typical Laboratory Setup Probe Stat
Page 32 and 33: Defect annealing Annealing of Senso
Page 35 and 36: • Columns etched from opposite si
Page 37 and 38: Sensors with p-Type Bulk Good perfo
Page 39: The Hamburg connection Additional M

Introduction to silicon detectors and radiation ... - IRTG Heidelberg

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?