Introduction to silicon detectors and radiation ... - IRTG Heidelberg
Introduction to silicon detectors and radiation ... - IRTG Heidelberg
Introduction to silicon detectors and radiation ... - IRTG Heidelberg
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Primary knock-on a<strong>to</strong>m (PKA)<br />
Basic process: displacement of<br />
Si a<strong>to</strong>ms in lattice<br />
Threshold for displacement<br />
damage: minimum recoil energy<br />
Classes of damage<br />
(depending on recoil energy)<br />
Isolated point defects<br />
→ minimum recoil energy<br />
ER > 15–25 eV<br />
Defect clusters = areas with large<br />
number defects → ER > 15 keV<br />
Defects are dynamic:<br />
Movement in crystal<br />
Recombination with other defects<br />
Annealing with high temperature<br />
Microscopic Picture<br />
[V.A.J. van Lint et al., Mechanisms of Radiation<br />
Effects in Electronic Materials, Wiley 1980]<br />
<strong>IRTG</strong> Fall School 2010, <strong>Heidelberg</strong>, November 1–5, 2010, U. Husemann: <strong>Introduction</strong> (Part I)<br />
22
Change language