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PHYS Ashutosh Rath - Homi Bhabha National Institute

PHYS Ashutosh Rath - Homi Bhabha National Institute

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4.2 (a) BF XTEM image of as-deposited samples 5 nm Au/SiO2/Si(100)<br />

and (b) corresponding HRTEM image. (c) shows the XTEM image of<br />

the 5 nm Au/SiO 2 /Si(100) taken at RT after annealed upto 975 o C and<br />

(d) corresponding HRTEM image. . . . . . . . . . . . . . . . . . . . . 58<br />

4.3 (a)SEM image of as-deposited samples 11.7 nm Au/SiO 2 /Si(100)(b)<br />

SEM image taken at RT after annealed upto 975 o C and (c) corresponding<br />

XTEM image. . . . . . . . . . . . . . . . . . . . . . . . . . 59<br />

4.4 SEM image of 50nm Au/SiO 2 /Si(100) heated upto 975 o C (a) elemental<br />

mapping which shows the presence of substrate silicon (b) and Au (c)<br />

and corresponding EDX spectrum (d). . . . . . . . . . . . . . . . . . 59<br />

4.5 (a) SEM image of as deposited samples 50 nm Au/SiO 2 /Si(100), (b)<br />

SEM image taken at RT after the sample was annealed upto 975 o C<br />

(inset figure shows SEM image taken at 5 KeV electron energy), (c)<br />

corresponding XTEM image and (d) SAD pattern taken on one of the<br />

Au island. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60<br />

4.6 SEM image shows the (a) 11.7nm Au grown by MBE (without native<br />

oxide at the interface) method which is annealed upto 975 o C inside<br />

LV and (b)corresponding XTEM image (inset figure shows the SAD<br />

pattern) (c) thermally grown (with oxide) 11.7 nm Au annealed upto<br />

975 o C inside HV and (d)corresponding XTEM image . . . . . . . . . 61<br />

4.7 (a)SEM image of thermally grown 50 nm Au heated upto 975 o C inside<br />

HV (b) corresponding Bright field TEM image and (c) the HRTEM<br />

image shows the presence of gold silicide. . . . . . . . . . . . . . . . . 63<br />

4.8 (a) STEM image from 50 nm Au/SiO x /Si(100) annealed at 975 o C. (b)<br />

is the region taken at higher magnification from a selected area in (a).<br />

Fig. c(i) is from the Oxygen EELS line scan from region (i) and d(ii)<br />

is from the region (ii) shown in (b). Width of the variation of oxide<br />

layer thickness can be seen in (c) and (d)[161]. . . . . . . . . . . . . . 64<br />

4.9 SEM image of 50 nm Au/thermally grown 50 nm SiO x /Si(100) substrate<br />

annealed at 975 o C under low vacuum ((inset figure shows SEM<br />

image taken at 5 KeV electron energy.) . . . . . . . . . . . . . . . . . 65<br />

4.10 (a) SEM based EBSD orientation mapping in 50 nm Au/SiO x /Si(100)<br />

annealed at 975 o C, (b) and (c) corresponding inverse pole figures (d)<br />

histogram plot of the misorientation angle Vs number fraction [161]. . 66<br />

xxiii

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