PHYS Ashutosh Rath - Homi Bhabha National Institute
PHYS Ashutosh Rath - Homi Bhabha National Institute
PHYS Ashutosh Rath - Homi Bhabha National Institute
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Introduction 3<br />
configuration without direct use of conventional lithography techniques. A number of<br />
self-assembly techniques have been reported for fabricating nanoscale structures. One<br />
type of self-assembly involves the preparation of semiconductor/metal islands, and it<br />
can be carried out by a technique called heteroepitaxy, which involves the placement<br />
or deposition of the material that forms the island on a supporting substance made<br />
of a different material with a closely matched interface between them. Heteroepitaxy<br />
has been widely used for research, as well as for the fabrication of many semiconductor<br />
devices, so it is a well-developed technique. It involves bringing atoms or<br />
molecules to the surface of the substrate where they do one of three things as mentioned<br />
in the following. They are either adsorbed and diffuse about on the surface<br />
until they join or nucleate with another adatom to form an island attach themselves<br />
to or aggregate into an existing island or desorb and thereby leave the surface. Small<br />
islands can continue to grow, migrate to other positions or evaporate. There is a<br />
critical size at which they become stable and no longer experience much evaporation.<br />
Thus, there is an initial nucleation stage when the number of islands increases with<br />
the coverage. This is followed by an aggregation stage when the number of islands<br />
level off and the existing ones grow in size. Finally, there is the coalescence stage<br />
when the main events that take place involve the merger of existing islands with each<br />
other to form larger islands. There have been numerous interesting studies on the<br />
mechanism of relaxation of strain in such epitaxial layers. Strained epitaxial layers<br />
are inherently unstable and have interesting properties. It has been reported that the<br />
dislocation formation and the shape transition are the important processes by which<br />
relaxation of strain occurs [26, 27, 28, 29]. In recent years, it has been recognized<br />
that shape changes such as island formation constitute a major mechanism for strain<br />
relief [26, 28]. Tersoff and Tromp reported that a strain-induced shape transition may<br />
occur [26]. Below a critical size, islands have a compact symmetric shape. For larger<br />
sizes, they adopt a long thin shape that allows better elastic relaxation of the island’s<br />
stress [26].<br />
Metallic nanoparticles are important for both theoretical and practical view points.<br />
They represent one of the most promising classes of nano materials by virtue of<br />
their interesting optoelectronic, thermal, magnetic, and superior catalytic properties<br />
[30, 31, 33, 32], which result in the preparation of new materials for energy storage,<br />
photonics, communications and sensing application [34, 35, 36, 37]. Unlike the bulk