Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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By applying the optimum growth parameters: P-doped Si and Si:C layers (10 18 cm -3 ) were investigated by temperature dependent Hall measurements Si ref. mobility values are in good agreement with previous results at this doping level Mobility [cm 2 /Vs] 300 250 200 150 100 Si ref. 0.2% C 0.5% C 50 Mobility values decreases with increasing carbon concentration. Scattering due to the generated defects (mainly interstitial carbon). 0 50 150 250 350 Temperature [K] 1818
Selective growth of boron doped SiGe • SiGe Source/Drain • SiGe channel • HBT applications • Future devices, opto etc... • Selective growth on patterned wafers – All influenced by pattern dependency or loading effect 1919
Page 1 and 2: Integration of epitaxial SiGe(C) la
Page 3 and 4: Introduction to MOSFET devices Clea
Page 5 and 6: MOSFET operation Digital applicatio
Page 7 and 8: Mobility boosters Substrate-based P
Page 9 and 10: Outline • Introduction to MOSFET
Page 11 and 12: SiGe(C) as mobility booster • The
Page 13 and 14: CVD reactor ASM Epsilon 2000 Indust
Page 15 and 16: Chemical reactions • Silane-based
Page 17: As a result of all optimization of
Page 21 and 22: Pattern dependency 21 80 Large grow
Page 23 and 24: Origin of pattern dependency Diffus
Page 25 and 26: Effect of surface migration species
Page 27 and 28: Effect of surface migration species
Page 33 and 34: Long channel electrical characteris
Page 35 and 36: Bulk vs UTB SOI 160 SiGe 140 FD SOI
Page 37 and 38: Introduction • Bandgap narrowing
Page 39 and 40: Experimental - Stress Measurement [
Page 41 and 42: Device Performance (L G =80 nm) Dra
Page 43 and 44: Substrate Junction Leakage Comparis
Page 45 and 46: Substrate Junction Leakage Effect o
Page 47 and 48: Source to Drain Leakage L G =80 nm
Page 49 and 50: Source to Drain Leakage L G =80 nm
Page 51 and 52: Conclusions • 1.8X sSi mobility e

Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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