Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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Pattern dependency (A) [µm] (B) Test Pattern 160 80 1 40 2 Si 20 4 10 8 Isolated Chips Si Si Si Opening sizes from 1 1-160 160 µm 2 Si coverages from 0.01-37 % Si 2020
Pattern dependency 21 80 Large growth rate and Ge amount variation when changing amount of open Si (Si coverage) Ge [%] 20 19 18 17 16 15 70 60 50 40 30 Growth rate [Å/min] 14 0.10 1.00 10.00 100.00 Si Coverage [%] 20 2121
Page 1 and 2: Integration of epitaxial SiGe(C) la
Page 3 and 4: Introduction to MOSFET devices Clea
Page 5 and 6: MOSFET operation Digital applicatio
Page 7 and 8: Mobility boosters Substrate-based P
Page 9 and 10: Outline • Introduction to MOSFET
Page 11 and 12: SiGe(C) as mobility booster • The
Page 13 and 14: CVD reactor ASM Epsilon 2000 Indust
Page 15 and 16: Chemical reactions • Silane-based
Page 17 and 18: As a result of all optimization of
Page 19: Selective growth of boron doped SiG
Page 23 and 24: Origin of pattern dependency Diffus
Page 25 and 26: Effect of surface migration species
Page 27 and 28: Effect of surface migration species
Page 33 and 34: Long channel electrical characteris
Page 35 and 36: Bulk vs UTB SOI 160 SiGe 140 FD SOI
Page 37 and 38: Introduction • Bandgap narrowing
Page 39 and 40: Experimental - Stress Measurement [
Page 41 and 42: Device Performance (L G =80 nm) Dra
Page 43 and 44: Substrate Junction Leakage Comparis
Page 45 and 46: Substrate Junction Leakage Effect o
Page 47 and 48: Source to Drain Leakage L G =80 nm
Page 49 and 50: Source to Drain Leakage L G =80 nm
Page 51 and 52: Conclusions • 1.8X sSi mobility e

Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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