Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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Mobility Si, SiGe and SiGeC channels Effective electric field (MV/cm) 200 175 0 0.1 0.2 0.3 0.4 0.5 Si universal Mobility (cm 2 /Vs) 150 125 100 75 50 SiGe SiGeC Si 25 0 SIMOX Substrates 0 2 4 6 8 10 x10 12 Inversion charge density (cm -2 ) 3434
Bulk vs UTB SOI 160 SiGe 140 FD SOI Mobility [cm 2 /Vs] 120 100 80 60 40 Bulk Si SiGe Si 20 0 0 2 4 6 8 10 12 Inversion charge density [cm -2 ] 10 12 3535
Page 1 and 2: Integration of epitaxial SiGe(C) la
Page 3 and 4: Introduction to MOSFET devices Clea
Page 5 and 6: MOSFET operation Digital applicatio
Page 7 and 8: Mobility boosters Substrate-based P
Page 9 and 10: Outline • Introduction to MOSFET
Page 11 and 12: SiGe(C) as mobility booster • The
Page 13 and 14: CVD reactor ASM Epsilon 2000 Indust
Page 15 and 16: Chemical reactions • Silane-based
Page 17 and 18: As a result of all optimization of
Page 19 and 20: Selective growth of boron doped SiG
Page 21 and 22: Pattern dependency 21 80 Large grow
Page 23 and 24: Origin of pattern dependency Diffus
Page 25 and 26: Effect of surface migration species
Page 27 and 28: Effect of surface migration species
Page 33: Long channel electrical characteris
Page 37 and 38: Introduction • Bandgap narrowing
Page 39 and 40: Experimental - Stress Measurement [
Page 41 and 42: Device Performance (L G =80 nm) Dra
Page 43 and 44: Substrate Junction Leakage Comparis
Page 45 and 46: Substrate Junction Leakage Effect o
Page 47 and 48: Source to Drain Leakage L G =80 nm
Page 49 and 50: Source to Drain Leakage L G =80 nm
Page 51 and 52: Conclusions • 1.8X sSi mobility e

Integration of epitaxial SiGe(C) layers in advanced CMOS devices ...

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