Download Datasheet - Infineon

SIDC112D170H
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage V RRM T vj = 25 °C 1700 V
Continuous forward current I F T vj < 150°C
Maximum repetitive forward current I FRM T vj < 150°C 410
Junction temperature range T vj -40...+175 °C
Operating junction temperature T vj -40...+150 °C
Dynamic ruggedness² )
P max
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterisation
I Fmax = 410A, V Rmax =
1700V, T vj ≤ 150°C
1 )
tbd
A
kW
Static Characteristic (tested on wafer), T vj = 25 °C
Parameter Symbol Conditions
Value
min. typ. max.
Reverse leakage current I R V R =1700V 20 µA
Cathode-Anode
breakdown Voltage
3)
Diode forward voltage V F
3)
V F tested at lower current
V BR I R =0.25mA 1700 V
Unit
I F =205A 1.9 2.3 V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, IMM PSD, L4502A, Edition 0.9, 22.02.2010