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SIDC112D170H Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage V RRM T vj = 25 °C 1700 V Continuous forward current I F T vj < 150°C Maximum repetitive forward current I FRM T vj < 150°C 410 Junction temperature range T vj -40...+175 °C Operating junction temperature T vj -40...+150 °C Dynamic ruggedness² ) P max 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation I Fmax = 410A, V Rmax = 1700V, T vj ≤ 150°C 1 ) tbd A kW Static Characteristic (tested on wafer), T vj = 25 °C Parameter Symbol Conditions Value min. typ. max. Reverse leakage current I R V R =1700V 20 µA Cathode-Anode breakdown Voltage 3) Diode forward voltage V F 3) V F tested at lower current V BR I R =0.25mA 1700 V Unit I F =205A 1.9 2.3 V Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IMM PSD, L4502A, Edition 0.9, 22.02.2010
SIDC112D170H Chip Drawing A A: Anode pad Edited by INFINEON Technologies, IMM PSD, L4502A, Edition 0.9, 22.02.2010
Page 1: SIDC112D170H Fast switching diode F

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