THAT120 - AMPLIMOS one stage amplifiers, amplificatori audio ...

THAT Corporation
Quad Low-Noise
PNP Transistor Array
THAT120
FEATURES
APPLICATIONS
-25VV CEO
Multipliers
Four Matched PNP Transistors
Microphone Preamplifiers
Low noise — 0.75 nV Hz
Tape Head Preamplifiers
High Speed — 325 MHz f t
Current Sources
Excellent Matching - 500 V (typ)
Current Mirrors
Dielectrically Isolated
Log/Antilog Amplifiers
DESCRIPTION
THAT120 is a quad, large-geometry monolithic
PNP transistor array which combines low noise, high
speed and excellent parametric matching. The large
geometry typically results in 25 base spreading resistance,
producing 0.75 nV Hz voltage noise. This
makes these parts an excellent choice for low-noise
amplifier input stages.
Fabricated on a Complementary Bipolar Dielectrically
Isolated process, all four transistors are electrically
isolated from each other by a layer of oxide.
The resulting low collector-to-substrate capacitance
produces a typical f t of 325 MHz, for AC performance
similar to 2N3906-class devices. The dielectric
isolation also minimizes crosstalk and provides
complete DC isolation.
Substrate biasing is not required for normal operation,
though the substrate should be grounded to
optimize speed. The one-chip construction assures
excellent parameter matching and tracking over temperature.
8
Q4 Q3
9
10
11
Q2 Q1
12
13
SUB NC
14
7
6
5
4
3
2
1
1
0.060
(1.52)
Typ.
0.750±0.004
(19.05±0.10)
0.10 Typ.
(2.54)
0.075
(1.91)
0.25±.004
(6.35±0.10)
0.125±0.004
(3.18±0.10)
0.018
(0.46)
0.32 Max.
(8.13)
0.010
(0.25)
1
0.050
(1.27)
Typ
0.018 (0.46)
Max
0.344 (8.74)
Max
0.157
(3.99)
Max
0.245
(6.2)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
Figure 1. Pin
Configuration
Figure 2. Dual-In-Line Package Outline
Figure 3. Surface Mount Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com

Rev. 11/27/00
SPECIFICATIONS 1
Maximum Ratings (T A
=25C)
Parameter Symbol Conditions Min Typ Max Units
Collector-Emitter Voltage BV CEO I C = 1 mAdc, I B = 0 -25 -40 V
Collector-Base Voltage BV CBO I C =10Adc, I E = 0 -25 40 V
Emitter-Base Voltage BV EBO I E =10Adc, I C =0 -5 V
Collector-Collector Voltage BV CC 100 ±200 V
Emitter-Emitter Voltage BV EE 100 ±200 V
Collector Current I C -10 -20 mA
Emitter Current I E -10 -20 mA
Operating Temperature Range T A 0 70 C
Maximum Junction Temperature T JMAX 150 °C
Storage Temperature T STORE -45 125 °C
Electrical Characteristics 2
Parameter Symbol Conditions Min Typ Max Units
Current Gain h fe V CB =10V
I C =1mA 50 75
I C =10A 50 75
Current Gain Matching h fe V CB =10V,I C =1mA — 5 — %
Noise Voltage Density e N V CB =10V,I C = 1 mA, 1 kHz — 0.75 — nV / Hz
Gain-Bandwidth Product f t I C = 1 mA, V CB = 10 V 325 MHz
V BE (V BE1 -V BE2 ;V BE3 -V BE4 ) V OS I C =1mA — 0.5 3 mV
I C =10A — 0.5 3 mV
I B (I B1 -I B2 ;I B3 -I B4 ) I OS I C =1mA — 700 1800 nA
I C =10A — 7 18 nA
Collector-Base Leakage Current I CBO V CB =25V — -25 — pA
Bulk Resistance r BE V CB =0V,10A