Lecture 1 - Webstaff.kmutt.ac.th - kmutt
Lecture 1 - Webstaff.kmutt.ac.th - kmutt
Lecture 1 - Webstaff.kmutt.ac.th - kmutt
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Forward Bias Voltage<br />
The point at which <strong>th</strong>e diode changes from no-bias condition<br />
to forward-bias condition occurs when <strong>th</strong>e electrons and<br />
holes are given sufficient energy to cross <strong>th</strong>e p-n junction.<br />
This energy comes from <strong>th</strong>e external voltage applied <strong>ac</strong>ross<br />
<strong>th</strong>e diode.<br />
The forward bias voltage required for a:<br />
• gallium arsenide diode ≅ 1.2 V<br />
• silicon diode ≅ 0.7 V<br />
• germanium diode ≅ 0.3 V<br />
Electronic Devices and Circuit Theory, 10/e<br />
Robert L. Boylestad and Louis Nashelsky<br />
17<br />
Copyright ©2009 by Pearson Education, Inc.<br />
Upper Saddle River, New Jersey 07458 • All rights reserved.
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