Si1024X Dual N-Channel 20-V (D-S) MOSFET - SP-Elektroniikka

Si1024X
Vishay Siliconix
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Static
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 A 0.45 0.9 V
Gate-Body Leakage I GSS V DS = 0 V, V GS = 4.5 V 0.5 1.0 A
Zero Gate Voltage Drain Current I DSS
V DS = 20 V, V GS = 0 V, T J = 85C 5 A
V DS = 20 V, V GS = 0 V 0.3 100 nA
On-State Drain Current a I D(on) V DS = 5 V, V GS = 4.5 V 700 mA
V GS = 4.5 V, I D = 600 mA 0.41 0.70
Drain-Source On-State Resistance a r DS(on) V GS = 2.5 V, I D = 500 m A 0.53 0.85
DS(on)
V GS = 1.8 V, I D = 350 m A 0.70 1.25
Forward Transconductance a g fs V DS = 10 V, I D = 400 mA 1.0 S
Diode Forward Voltage a V SD I S = 150 mA, V GS = 0 V 0.8 1.2 V
Dynamic b
Total Gate Charge Q g 750
Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 250 mA 75 pC
Gate-Drain Charge Q gd 225
Turn-On Time t ON VDD V = 10 V, R L = 47
10
Turn-Off Time t OFF
I D 200 mA, V GEN = 4.5 V, R g = 10 36
ns
Notes
a. Pulse test; pulse width 300 s, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T A = 25C UNLESS NOTED)
1.0
Output Characteristics
1200
Transfer Characteristics
T C = −55C
− Drain Current (A)
0.8
0.6
0.4
V GS = 5 thru 1.8 V
I D - Drain Current (mA)
1000
800
600
400
25C
125C
I D
0.2
1 V
200
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V DS − Drain-to-Source Voltage (V)
0
0.0 0.5 1.0 1.5 2.0 2.5
V GS − Gate-to-Source Voltage (V)
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Document Number: 71170
S-41472—Rev. B, 02-Aug-04