Si1024X Dual N-Channel 20-V (D-S) MOSFET - SP-Elektroniikka

Si1024X
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) () I D (mA)
0.70 @ V GS = 4.5 V 600
20 0.85 @ V GS = 2.5 V 500
1.25 @ V GS = 1.8 V 350
FEATURES BENEFITS APPLICATIONS
Very Small Footprint
High-Side Switching
Low On-Resistance: 0.7
Low Threshold: 0.8 V (typ)
Fast Switching Speed: 10 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
SOT-563
SC-89
1
S 1
5
100
6 D 1
Marking Code: C
G 1 2
G 2
D 2 3
4 S 2
100
Ordering Information:
Si1024X-T1
Si1024X-T1—E3 (Lead (Pb)-Free)
Top View
ABSOLUTE MAXIMUM RATINGS (T A = 25C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V DS 20
Gate-Source Voltage V GS 6
T A = 25C
515 485
Continuous Drain Current (T J = 150C) a
T A = 85C
I D
370 350
Pulsed Drain Current b I DM 650
V
mA
Continuous Source Current (diode conduction) I S 450 380
Maximum Power Dissipation a
T A = 25C
T A = 85C
P D
145 130
280 250
mW
Operating Junction and Storage Temperature Range T J , T stg −55 to 150 C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71170
S-41472—Rev. B, 02-Aug-04
www.vishay.com
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Si1024X
Vishay Siliconix
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Static
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 A 0.45 0.9 V
Gate-Body Leakage I GSS V DS = 0 V, V GS = 4.5 V 0.5 1.0 A
Zero Gate Voltage Drain Current I DSS
V DS = 20 V, V GS = 0 V, T J = 85C 5 A
V DS = 20 V, V GS = 0 V 0.3 100 nA
On-State Drain Current a I D(on) V DS = 5 V, V GS = 4.5 V 700 mA
V GS = 4.5 V, I D = 600 mA 0.41 0.70
Drain-Source On-State Resistance a r DS(on) V GS = 2.5 V, I D = 500 m A 0.53 0.85
DS(on)
V GS = 1.8 V, I D = 350 m A 0.70 1.25
Forward Transconductance a g fs V DS = 10 V, I D = 400 mA 1.0 S
Diode Forward Voltage a V SD I S = 150 mA, V GS = 0 V 0.8 1.2 V
Dynamic b
Total Gate Charge Q g 750
Gate-Source Charge Q gs V DS = 10 V, V GS = 4.5 V, I D = 250 mA 75 pC
Gate-Drain Charge Q gd 225
Turn-On Time t ON VDD V = 10 V, R L = 47
10
Turn-Off Time t OFF
I D 200 mA, V GEN = 4.5 V, R g = 10 36
ns
Notes
a. Pulse test; pulse width 300 s, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T A = 25C UNLESS NOTED)
1.0
Output Characteristics
1200
Transfer Characteristics
T C = −55C
− Drain Current (A)
0.8
0.6
0.4
V GS = 5 thru 1.8 V
I D - Drain Current (mA)
1000
800
600
400
25C
125C
I D
0.2
1 V
200
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V DS − Drain-to-Source Voltage (V)
0
0.0 0.5 1.0 1.5 2.0 2.5
V GS − Gate-to-Source Voltage (V)
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Document Number: 71170
S-41472—Rev. B, 02-Aug-04

Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T A = 25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
r DS(on) − On-Resistance ( )
4.0
3.2
2.4
1.6
0.8
V GS = 1.8 V
V GS = 2.5 V
C − Capacitance (pF)
100
80
60
40
20
V GS = 0 V
f = 1 MHz
C iss
C oss
V GS = 4.5 V
0.0
0 200 400 600 800 1000
I D − Drain Current (mA)
C rss
0
0 4 8 12 16 20
V DS − Drain-to-Source Voltage (V)
5
Gate Charge
1.60
On-Resistance vs. Junction Temperature
− Gate-to-Source Voltage (V)
V GS
4
3
2
1
V DS = 10 V
I D = 250 mA
r DS(on) − On-Resiistance
(Normalized)
1.40
1.20
1.00
0.80
V GS = 4.5 V
I D = 600 mA
V GS = 1.8 V
I D = 350 mA
0
0.0 0.2 0.4 0.6 0.8
Q g − Total Gate Charge (nC)
0.60
−50 −25 0 25 50 75 100 125
T J − Junction Temperature (C)
1000
Source-Drain Diode Forward Voltage
5
On-Resistance vs. Gate-to-Source Voltage
− Source Current (mA)
I S
100
10
T J = 25C
T J = 125C
T J = −55C
r DS(on) − On-Resistance ( )
4
3
2
1
I D = 350 mA
I D = 200 mA
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V SD − Source-to-Drain Voltage (V)
0
0 1 2 3 4 5 6
V GS − Gate-to-Source Voltage (V)
Document Number: 71170
S-41472—Rev. B, 02-Aug-04
www.vishay.com
3

Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T A = 25C UNLESS NOTED)
0.3
Threshold Voltage Variance vs. Temperature
3.0
I GSS vs. Temperature
0.2
2.5
I D = 0.25 mA
Variance (V)
V GS(th)
0.1
−0.0
−0.1
I GSS − (A)
2.0
1.5
1.0
−0.2
0.5
V GS = 4.5 V
−0.3
−50 −25 0 25 50 75 100 125
T J − Temperature (C)
0.0
−50 −25 0 25 50 75 100 125
T J − Temperature (C)
BV GSS − Gate-to-Source Breakdown Voltage (V)
BV GSS vs. Temperature
7
6
5
4
3
2
1
0
−50 −25 0 25 50 75 100 125
T J − Temperature (C)
2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P DM
0.05
t 1
t
0.02
2 t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 500C/W
3. T JM − T A = P DM Z (t) thJA
Single Pulse
4. Surface Mounted
0.01
10 −4 10 −3 10 −2 10 −1
1 10 100
600
Square Wave Pulse Duration (sec)
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Document Number: 71170
S-41472—Rev. B, 02-Aug-04