Recent Progress in 2G HTS Wires at SuperPower

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SuperPower’s 2G wire is based on high throughput processes & superior substrate High throughput is critical for low cost 2G wire and to minimize capital investment. SuperPower’s 2G conductor is based on high throughput IBAD MgO and MOCVD processes. Use of IBAD as buffer template provides us choice of any substrate. Advantages of IBAD are high strength, low a.c. loss (non magnetic, high resistive substrates) and high engineering current density (ultra thin substrates) 20μm Cu 2 μm Ag 1 μm HTS ~ 30 nm LMO ~ 30 nm Homo-epi MgO ~ 10 nm IBAD MgO < 0.1 mm 50μm Hastelloy substrate 20μm Cu ISS 2007 –2–
SuperPower’s 2G Pilot Manufacturing facilities have been operational since 2006 Majority of investment already made for 1000 km/year capability Pilot Substrate Electropolishing Pilot Buffer Pilot IBAD Pilot HTS ISS 2007 –3–
Page 1: Recent Progress in Second-generatio
Page 5 and 6: Excellent overall performance obtai
Page 7 and 8: New high field coil constructed wit
Page 9 and 10: World record performance achieved w
Page 11 and 12: Pathway to commercialization of 2G
Page 13 and 14: Higher currents in > 100 m lengths
Page 15 and 16: We have proven high throughput proc
Page 17 and 18: Kilometer lengths of fully buffered
Page 19 and 20: Remarkable progress in 2G wire scal
Page 21: Substantial improvements made since

Recent Progress in 2G HTS Wires at SuperPower

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