Product Design Guide - Diodes, Inc.

Thyristor Surge Protection Devices (TSPDs)
Part Number
Rated
Repetitive
Off-State
Voltage
Surge
Rating
Off-State
Leakage
Current
Breakover
Voltage
On-State
Voltage
Off-State
Capacitance
I DRM @
V DRM I PP V BO V T @ I T = 1A I BO
I H
C O
V DRM
V A µA V V
50A Bidirectional Thyristor Surge Protection Devices / SMB
Breakover Current
TB0640M 58 50 5 77 3.5 50 800 150 800 140
TB0720M 65 50 5 88 3.5 50 800 150 800 140
TB0900M 75 50 5 98 3.5 50 800 150 800 140
TB1100M 90 50 5 130 3.5 50 800 150 800 90
TB1300M 120 50 5 160 3.5 50 800 150 800 90
TB1500M 140 50 5 180 3.5 50 800 150 800 90
TB1800M 160 50 5 220 3.5 50 800 150 800 90
TB2300M 190 50 5 265 3.5 50 800 150 800 60
TB2600M 220 50 5 300 3.5 50 800 150 800 60
TB3100M 275 50 5 350 3.5 50 800 150 800 60
TB3500M 320 50 5 400 3.5 50 800 150 800 60
Min.
(mA)
Discrete Semiconductors
Max.
(mA)
Holding Current
Min.
(mA)
Max.
(mA)
pF
Waveform
t r /t p
Standard I pp (A)
2/10 µs GR-1089-CORE 300
8/20 µs IEC 61000-4-5 250
10/160 µs FCC Part 68 150
10/700 µs ITU-T, K20/21 100
10/560 µs FCC Part 68 75
10/1000 µs GR-1089-CORE 50
100A Bidirectional Thyristor Surge Protection Devices / SMB
TB0640H 58 100 5 77 3.5 50 800 150 800 200
TB0720H 65 100 5 88 3.5 50 800 150 800 200
TB0900H 75 100 5 98 3.5 50 800 150 800 200
TB1100H 90 100 5 130 3.5 50 800 150 800 120
TB1300H 120 100 5 160 3.5 50 800 150 800 120
TB1500H 140 100 5 180 3.5 50 800 150 800 120
TB1800H 160 100 5 220 3.5 50 800 150 800 120
TB2300H 190 100 5 265 3.5 50 800 150 800 80
TB2600H 220 100 5 300 3.5 50 800 150 800 80
TB3100H 275 100 5 350 3.5 50 800 150 800 80
TB3500H 320 100 5 400 3.5 50 800 150 800 80
Waveform
t r /t p
Standard I pp (A)
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 400
10/160 µs FCC Part 68 250
10/700 µs ITU-T, K20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
Thyristor Surge Protection Devices (TSPDs) 14-10
All data is subject to change. Please check our data sheets at www.diodes.com for updates.