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Diamond Microelectronic Gas Sensor for Detection of Benzene and

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Topic 3: Chemical <strong>and</strong> <strong>Gas</strong> <strong>Sensor</strong>s<br />

A solid-state hydrocarbon sensor <strong>for</strong> environmental applications<br />

Yasar Gurbuz 1 , Weng P. Kang 2 , <strong>and</strong> Jimmy L. Davidson 2<br />

1<br />

Sabanci University, Faculty <strong>of</strong> Engineering <strong>and</strong> Natural Sciences, Orhanli, Tuzla, 34956, Istanbul, Turkey<br />

Tel: +90 (216) 483 9533, Fax: +90 (216) 483 9550, email: yasar@sabanciuniv.edu<br />

2 V<strong>and</strong>erbilt University, Department <strong>of</strong> Engineering <strong>and</strong> Computer Engineering, Nashville, TN, 37235, USA<br />

Tel: +1(615) 322-0952, Fax: +1(615) 343-6614, e-mail: wkang@vuse.v<strong>and</strong>erbilt.edu<br />

Summary: We have applied CVD (chemical vapor deposition) diamond chemical sensor to detect benzene <strong>and</strong> toluene, volatile organic<br />

compounds, possible indication <strong>of</strong> the existence <strong>of</strong> environmental hazardous <strong>and</strong> petroleum in soil/subsoil. Steady-state <strong>and</strong> transient<br />

response <strong>of</strong> the sensor <strong>for</strong> both gases have been extensively studied. These studies have shown that the sensror shows a large sensitivity,<br />

fast response, high selectivity, large dynamic range, repeatable/reproducible response <strong>for</strong> the detection <strong>of</strong> benzene <strong>and</strong> toluene gases. <strong>Gas</strong><br />

detection mechanisms <strong>of</strong> the sensor <strong>for</strong> both gases have been analyzed <strong>and</strong> models have been developed. Activation energy analysis <strong>of</strong> the<br />

sensor <strong>for</strong> both gases resulted very small values, confirming fast response <strong>and</strong> high selectivity. Furthermore, the effect <strong>of</strong> structural<br />

parameters <strong>of</strong> the sensor on gas sensing per<strong>for</strong>mance have been analyzed <strong>and</strong> optimized structures have been presented in this study.<br />

Motivation: It has been demonstrated that the presence <strong>of</strong> benzene (C 6 H 6 ) <strong>and</strong> toluene (C 7 H 8 ) in the soil could be an indicator <strong>of</strong> oil<br />

reservoirs as well as environmental contamination [1]. Researchers/engineers use miniature field portable gas chromatograph devices,<br />

sensitive enough to detect benzene <strong>and</strong> toluene in the near surface layers <strong>of</strong> the earth, to predict the presence <strong>of</strong> oil reservoirs. But, with<br />

these devices it takes minutes to detect tens <strong>of</strong> parts per billion <strong>of</strong> benzene <strong>and</strong> toluene in samples taken from soil. The long sample time<br />

limits the area, surveyed per day. If the sample time can be shortened to a few seconds <strong>and</strong> the detection threshold can be reduced to a few<br />

parts per billion, then much larger areas can be surveyed much more quickly <strong>for</strong> oil reservoir <strong>and</strong> environmental contamination.<br />

We have applied CVD (chemical vapor deposition) diamond chemical sensor to detect benzene <strong>and</strong> toluene, volatile organic compounds,<br />

possible indication <strong>of</strong> the existence <strong>of</strong> environmental hazardous <strong>and</strong> petroleum in soil/subsoil. These sensors were first invented, patented,<br />

<strong>and</strong> demonstrated to detect very small quantities <strong>of</strong> hydrogen, oxygen, <strong>and</strong> carbon monoxide [2,3]. They have been produced using the<br />

MIS (catalytic-Metal - Insulative-diamond - Semiconductor-diamond) architecture, as seen in Figure 1. The polycrystalline diamond retains<br />

all <strong>of</strong> the superior material properties <strong>of</strong> single crystal diamond without the high cost. Some <strong>of</strong> those properties, also important to the<br />

chemical sensor operations, are: excellent thermal conductivity allowing rapid change in temperature, very tight strong lattice that prevents<br />

chemicals from dispersing into the diamond material, very low chemical reactivity, high temperature tolerance, <strong>and</strong> capability <strong>of</strong> being<br />

fabricated as a semiconductor or insulator. We have already demonstrated the hydrogen sensitivity <strong>of</strong> this sensor at a temperature range <strong>of</strong><br />

23 - 300˚C with an extremely fast response, recovery <strong>and</strong> high selectivity per<strong>for</strong>mance [2,3]. Its physical operation as a hydrogen sensor<br />

has been explained by Lundstrom, et. al. [4], <strong>and</strong> can briefly be summarized in a following sequence: a) hydrogen molecules outside the<br />

device adsorbs on the palladium surface, b) hydrogen dissociates <strong>and</strong> diffuses through the palladium to the metal - insulator interface, c)<br />

number <strong>of</strong> atomic hydrogen atoms adsorbs on the metal at the i-diamond interface creating a dipole layer, d) The dipole layer changes the<br />

work function difference between the palladium <strong>and</strong> the i-diamond, e) the current-voltage <strong>of</strong> the MIS diode changes, <strong>and</strong> f) changes in the<br />

current-voltage curve can be correlated to the hydrogen partial pressure outside the device.<br />

Results: A detailed fabrication process <strong>of</strong> the sensors were already described in the past [2,3]. Using the steady-state <strong>and</strong> transient<br />

characterization methods, detection characteristics <strong>and</strong> mechanisms, dynamic range, response <strong>and</strong> recovery times <strong>and</strong> activation energies <strong>of</strong><br />

the sensor <strong>for</strong> benzene <strong>and</strong> toluene hydrocarbon gases have been obtained, analyzed <strong>and</strong> determined over a temperature range <strong>of</strong> 25-200°C.<br />

Figures 2 <strong>and</strong> 3 show current-voltage (I-V) characteristics <strong>of</strong> the sensor in different amounts <strong>of</strong> benzene (Fig. 2) <strong>and</strong> toluene (Fig. 3) at<br />

200°C. A larger change in I-V characteristics upon exposure to larger gas amounts observed. Figure 4 <strong>and</strong> 5 show a family <strong>of</strong> steady-state<br />

value <strong>of</strong> the current change (∆I), at a fixed biasing voltage, versus benzene <strong>and</strong> toluene partial pressure <strong>for</strong> several operating temperatures.<br />

The curves show a rapid increase in ∆I with increasing gas amounts, followed by a saturation trend at higher amounts. The curves also<br />

show that the sensitivity increases at higher temperature. Also, a real-time response <strong>of</strong> the sensor to subsequent increment <strong>of</strong> benzene <strong>and</strong><br />

toluene amounts is shown in Figs. 6 <strong>and</strong> 7, respectively. The device shows an immediate response to benzene <strong>and</strong> toluene amount<br />

increment. Moreover, the sensor recovers as the gases pumped out, observed from the desorption curve. Figures 8 <strong>and</strong> 9 show the<br />

activation energy plots <strong>of</strong> the sensor <strong>for</strong> benzene <strong>and</strong> toluene gases, respectively. The adsorption activation energy <strong>of</strong> the device was found<br />

0.0017 eV in 6-torr benzene <strong>and</strong> 0.0022 eV in 6-torr toluene over the temperature range investigated. It is evidently true that toluene (C 7 H 8 )<br />

is a more complex molecule than benzene (C 6 H 6 ). Hence, larger activation energy is required to activate toluene than benzene to some <strong>for</strong>m<br />

<strong>of</strong> activated complex or hydrocarbon radicals. Moreover, the low values <strong>of</strong> the adsorption activation energy confirm the observed high<br />

sensitivity <strong>and</strong> fast response <strong>of</strong> the diamond-based MIS device <strong>for</strong> benzene <strong>and</strong> toluene gases.<br />

Improvement <strong>of</strong> sensor sensitivity: The diamond-based hydrocarbon gas sensitive MIS (catalytic-Metal/ Intrinsic-diamond/ p + -diamond<br />

Semiconductor) diode structure consists <strong>of</strong> three important layers: catalytic metal, i-diamond, <strong>and</strong> doped-diamond layers. I-diamond<br />

thickness plays a crucial role in I-V characteristics <strong>of</strong> the sensor <strong>and</strong>, also found in this study, its gas sensing per<strong>for</strong>mance. Two different i-<br />

diamond thicknesses (0.17µm <strong>and</strong> 0.25µm) were fabricated to evaluate this effect. Figure 10 shows a steady-state value <strong>of</strong> the current<br />

change (∆I), at a fixed bias-voltage, versus benzene partial pressure, operating at 100°C, <strong>for</strong> i-diamond thickness <strong>of</strong> 0.17µm <strong>and</strong> 0.25µm. A<br />

larger sensitivity <strong>and</strong> increased dynamic range <strong>of</strong> operation is observed in Fig. 10 <strong>for</strong> the sensor utilizing a thicker i-diamond. The effect <strong>of</strong><br />

catalytic metal <strong>and</strong> temperature on sensor per<strong>for</strong>mance have also been evaluated <strong>and</strong> will be presented in the final manuscript.<br />

<strong>Detection</strong> Mechanism: Several physical theories have been considered to explain the operation <strong>of</strong> the MIS hydrocarbon sensor. These<br />

include the following three concepts: a) dissociation <strong>of</strong> hydrocarbon molecules into individual atoms <strong>and</strong> subsequent detection <strong>of</strong> hydrogen<br />

alone, b) dissociation <strong>of</strong> hydrocarbon molecules into smaller molecules that are able to diffuse through the palladium, adsorb onto the Pd<br />

1


surface at the i-diamond interface causing a change in the work function <strong>and</strong> a subsequent change in the I-V relation, <strong>and</strong> c) movement <strong>of</strong><br />

the entire benzene or toluene molecule through the palladium to the i-diamond interface where it produces changes in the polarization <strong>of</strong><br />

the palladium surface. Each <strong>of</strong> these theories have been analyzed <strong>and</strong> results will be presented in the final manuscript.<br />

References<br />

[1] J. Getino, L. Ares, et. al., Environmental applications <strong>of</strong> gas sensor arrays:combustion atmospheres <strong>and</strong> contaminated soils, <strong>Sensor</strong>s<br />

<strong>and</strong> Actuators B 59 (1999) pp. 249-254<br />

[2] W. P. Kang, Y. Gurbuz, J. L. Davidson, <strong>and</strong> D. V. Kerns, New Hydrogen <strong>Sensor</strong> Using a Polycrystalline <strong>Diamond</strong>-Based Schottky<br />

Diodes, Journal <strong>of</strong> the Electrochem. Society, Vol. 141, No. 8, pp. 2231-2234, August 1994<br />

[3] W. P. Kang et al. 1997, US Patent No: 5,656,827<br />

[4] Lundstrom, K.I., M. S. Shivaraman <strong>and</strong> C. M. Svensson, “A Hydrogen-Sensitive Pd-Gate MOS Transistor,” J. Appl. Phys., Vol. 46, No.<br />

9, (Sept. 1975) pp. 3876-3881<br />

Figure 1: <strong>Diamond</strong>-based chemical sensor<br />

Figure 2<br />

Figure 3<br />

Figure 4<br />

Figure 5 Figure 6 Figure 7<br />

Ln(dI/dt)<br />

0.016<br />

0.014<br />

0.012<br />

0.01<br />

0.008<br />

0.006<br />

0.004<br />

0.002<br />

Ln(dI/dt) vs 1/T <strong>for</strong> <strong>Benzene</strong><br />

Ea=0.0017eV<br />

Ln(dI/dt)<br />

0.021<br />

0.016<br />

0.011<br />

0.006<br />

0.001<br />

Ln(dI/dt) vs 1/T <strong>for</strong> Toluene<br />

Ea=0.0022eV<br />

Effect <strong>of</strong> i-diamond thickness on <strong>Benzene</strong><br />

sensitivity<br />

0<br />

0.0024 0.0026 0.0028 0.003 0.0032 0<br />

0.0024 0.0026 0.0028 0.003 0.0032 -0.004<br />

0 2 4 6 8 10 12<br />

1/T<br />

1/T<br />

C 6H 6 Concentration(torr)<br />

Figure 8 Figure 9 Figure 10<br />

∆ I (mA)<br />

4.5<br />

4<br />

3.5<br />

3<br />

2.5<br />

2<br />

1.5<br />

1<br />

0.5<br />

i-diamond(0.25um)<br />

i-diamond(0.17um)<br />

2

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