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An Introduction to the Theory of Crystalline Elemental Solids and ...

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FIG. 15: Side view <strong>of</strong> <strong>the</strong> π-bonded chain model for <strong>the</strong> (111) surface <strong>of</strong> <strong>the</strong> group IV elements<br />

in <strong>the</strong> diamond lattice <strong>and</strong> how it can be transformed in <strong>to</strong> two related structures known as <strong>the</strong><br />

“chain-left” or “chain-high” <strong>and</strong> “chain-right” or “chain-low” isomers. After ref. [107].<br />

<strong>the</strong> [110] direction connected <strong>to</strong> <strong>the</strong> subsurface a<strong>to</strong>ms by 5- <strong>and</strong> 7-membered rings, as<br />

opposed <strong>to</strong> <strong>the</strong> 6-membered rings <strong>of</strong> <strong>the</strong> bulk structure. This zig-zag chain model for<br />

<strong>the</strong> (2×1) reconstruction <strong>of</strong> <strong>the</strong> (111) surface <strong>of</strong> <strong>the</strong> diamond lattice is known as <strong>the</strong><br />

“π-bonded chain model ”. In <strong>the</strong> original π-bonded chain model, due <strong>to</strong> P<strong>and</strong>ey [118],<br />

all <strong>the</strong> <strong>to</strong>p layer Si a<strong>to</strong>ms in <strong>the</strong> π-bonded chains reside at <strong>the</strong> same height. However,<br />

like <strong>the</strong> situation just discussed for <strong>the</strong> Si dimers <strong>of</strong> <strong>the</strong> (100)-(2×1) reconstruction, <strong>the</strong><br />

a<strong>to</strong>ms in <strong>the</strong> π-bonded chains are liable <strong>to</strong> buckle. Specifically one can generate two<br />

analogue structures by titling <strong>the</strong> <strong>the</strong> two a<strong>to</strong>ms <strong>of</strong> <strong>the</strong> chain in clockwise or anticlockwise<br />

directions. How <strong>the</strong> two resulting structures, <strong>the</strong> so-called “chain-high” or “chain-left”<br />

<strong>and</strong> “chain-low” or “chain-right” structures are generated is illustrated in Fig. 15. For<br />

Ge(111)-(2×1) <strong>the</strong> anticlockwise chain-high isomer is favored. For Si(111)-(2×1) both <strong>the</strong><br />

chain high <strong>and</strong> chain low structure are almost degenerate in energy <strong>and</strong> for C(111)-(2×1)<br />

no buckling is found. For a fuller discussion focussing on <strong>the</strong> physical origin <strong>of</strong> <strong>the</strong><br />

buckling <strong>the</strong> interested reader is referred <strong>to</strong> <strong>the</strong> book <strong>of</strong> Bechstedt [107].<br />

5.3 Surface Structure Summary<br />

To conclude our discussion on semiconduc<strong>to</strong>r <strong>and</strong> metal surface structures, <strong>the</strong>se surfaces<br />

tend not <strong>to</strong> retain <strong>the</strong>ir bulk-truncated structures <strong>and</strong> a huge variety <strong>of</strong> relaxations <strong>and</strong><br />

reconstructions are possible. The interested reader may wish <strong>to</strong> refer <strong>to</strong> Tables 2.3a <strong>and</strong><br />

2.3b <strong>of</strong> Somorjai’s textbook on surface chemistry for a more extensive overview <strong>of</strong> <strong>the</strong><br />

many <strong>and</strong> varied structures clean solid surfaces can adopt [72].<br />

6. Surface Energetics<br />

6.1 <strong>Introduction</strong> <strong>and</strong> Experimental Considerations<br />

The energy <strong>to</strong> make a surface at a given temperature <strong>and</strong> pressure is <strong>the</strong> Gibbs surface<br />

free energy, G S . The Gibbs surface free energy thus determines <strong>the</strong> surface that will form<br />

under real world everyday conditions, <strong>and</strong> can be defined by <strong>the</strong> relation<br />

G = NG 0 + AG S , (32)

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