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JESD79E<br />
Page 33<br />
CK<br />
CK<br />
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11<br />
COMMAND<br />
WRITE<br />
NOP NOP NOP NOP NOP<br />
ADDRESS<br />
Bank,<br />
Col b<br />
tDQSS(nom)<br />
DQS<br />
DQ<br />
DI<br />
b<br />
DM<br />
tDQSS(min)<br />
DQS<br />
DQ<br />
DI<br />
b<br />
DM<br />
tDQSS(max)<br />
DQS<br />
DQ<br />
DI<br />
b<br />
DM<br />
DI b = Data In for column b<br />
Three elements of data are applied in the programmed order following DI<br />
A noninterrupted burst of 4 is shown<br />
A10 is low with the WRITE command (autoprecharge is disabled)<br />
Example is for a x4 or x8 device where only one Data Mask and one<br />
Data Strobe are used. For a X16, UDM and LDM would be required, as<br />
well as UDQS and LDQS.<br />
Don’t Care<br />
Figure 21<br />
WRITE BURST - Nom., Min., and Max tDQSS
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