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JESD79E<br />
Page 39<br />
CK<br />
CK<br />
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11<br />
COMMAND<br />
ADDRESS<br />
WRITE<br />
Bank,<br />
Col b<br />
NOP NOP NOP READ NOP<br />
tWTR<br />
Bank<br />
Col n<br />
tDQSS(max)<br />
CL = 2.5<br />
DQS<br />
DQ<br />
DI<br />
b<br />
DM<br />
Don’t Care<br />
DI b = Data In for column b<br />
An interrupted burst of 8 is shown, 3 data elements are written<br />
Two subsequent elements of Data In are applied in the programmed order following DI b<br />
tWTR is referenced from the first positive CK edge after the last Data In pair (not the last<br />
desired Data In element)<br />
tWTR = 2tCK for optional CL = 1.5 (otherwise tWTR = 1tCK)<br />
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)<br />
Example is for x4 or x8 devices where only one Data Mask and one Data Strobe are<br />
used. For a X16, UDM and LDM would be required, as well as UDQS and LDQS.<br />
The READ and WRITE commands are to the same device but not necessarily to the<br />
same bank.<br />
Figure 27<br />
WRITE TO READ - Max tDQSS, ODD NUMBER OF DATA,<br />
INTERRUPTING
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