APD Photoreceivers - Voxtel

P h o t o d i o d e s • A P D s • P h o t o r e c e i v e r s 

E l e c t r o - O p t i c a l I n s t r u m e n t s 

2 0 1 2 C A T A L O G

Voxtel strives to be the industry’s first-choice solution for 

electro-optical devices, subsystems, and instrumentation. 

Contents 

APD Product Guide . . . . . . . . . . . . . . . 4 

Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our 

products are providing our customers with improved solutions for a variety of 

commercial, scientific, and military sensing applications, and are providing the 

performance to make new applications possible. 

Voxtel APDs . . . . . . . . . . . . . . . . . 6 

Introduction 6 

Product Series 6 

2 

The company was founded in 1999 with a strong focus on innovation and on 

bringing advanced electo-optics technologies to market, quickly and efficiently. 

We anticipate and translate application needs into innovative and cost-effective 

solutions, which we deliver to the market on time and with exceptional quality, 

allowing both Voxtel and our channel partners an optimal return on investment 

and rate of growth. 

Responsivity vs. Noise 8 

Product Comparison Table 9 

APD Product Listings . . . . . . . . . . . . . . 12 

Avalanche Photodiodes 12 

3 

Packaged APDs 23 

APD Photoreceivers 33 

APD Receiver Support Electronics Modules 48 

References . . . . . . . . . . . . . . . . . 49 

©2012 Voxtel, Inc. 

Voxtel Headquarters: 

15985 NW Schendel Ave. #200 

Beaverton, OR 97006 

LEGAL DISCLAIMER 

Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors. 

Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice. 

Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors 

Voxtel headquarters, Beaverton, OR 

in advertised prices are not binding on Voxtel, Inc. 

INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING, 

BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION, 

OR NON-INFRINGEMENT. 

Voxtel in Eugene, OR 

Voxtel Catalog, rev 03, 06/2012 © 

Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice. 


Voxtel makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.

APD Product Guide 

APD Product Guide 

4 

Deschutes FSI 

Deschutes BSI 

Siletz BSI 

Siletz UHG 

Part# Description Page# 

Bare APD Die 

VFI1-DAZA 25μm dia. 12 

VFI1-JAZA 75μm dia. 13 

VFI1-NAZA 200μm dia. 14 

APD Die on submount 

VFC1-EBZA 30μm dia. 15 

VFC1-JBZA 75μm dia. 16 

VFC1-NBZA 200μm dia. 17 


VFP1-EBZA 30μm dia. 18 

VFP1-JBZA 75μm dia. 19 

VFP1-NBZA 200μm dia. 20 


VFS1-HBZA 50μm dia. 21 

Part# Description Page# 

APD in hermetic TO-46 can 

VFI1-DCAA 25μm dia. 24 

VFI1-JCAA 75μm dia. 25 

VFI1-NCAA 200μm dia. 26 

APD with 3-stage TEC in hermetic TO-8 can 

VFI1-JKAB 75μm dia. 27 

VFI1-NKAB 200μm dia. 28 


VFC1-JCAA 75μm dia. 29 

VFC1-NCAA 200μm dia. 30 


VFC1-JKAB 75μm dia. 29 

VFC1-NKAB 200μm dia. 30 


VFP1-JCAA 75μm dia. 31 

VFP1-NCAA 200μm dia. 32 


VFP1-JKAB 75μm dia. 31 

VFP1-NKAB 200μm dia. 32 

Deschutes FSI 

Deschutes BSI 

Siletz BSI 

Part# Bandwidth Description Page# 

Window-coupled Receivers in hermetic TO-8 can 

RDI1-NJAC 200MHz 200μm dia. APD 35 

RDI1-JJAC 580MHz 75μm dia. APD 36 

Windowed or Fiber-coupled Receivers in hermetic TO-8 can 

RVC1-NJAF 120MHz 200μm dia. APD 37 

RYC1-NJAF 200MHz 200μm dia. APD 38 

RDC1-NJAF 300MHz 200μm dia. APD 39 

RDC1-JJAF 580MHz 75μm dia. APD 40 

Windowed or Fiber-coupled Receivers in hermetic TO-8 can 

RDP1-NJAF 350MHz 200μm dia. APD 42 

RIP1-NJAF 1GHz 200μm dia. APD 43 

RIP1-JJAF 2.1GHz 75μm dia. APD 44 

Ball-lens-coupled Receivers, TO-46 package 

R2P1-JCAA 1.5GHz 300μm dia. (effective) APD 45 

5 

Notes on APD Die and Packages 

Deschutes BSI, Siletz, and Siletz-UHG APDs are backside-illuminated devices that are provided on flip-chip 

submounts, ready for wirebonding. 

Packaged APDs are available standard with AR coating, and are optionally available with a variety of coatings 

and lenses, as well as fiber coupling options for the Deschutes BSI, Siletz, and Siletz UHG series. We look 

forward to your inquiries on custom orders. 

Notes on Photoreceivers 

A variety of custom options and optical fiber connections are available, and we continue to add standard 

products to our photoreceiver lines. We look forward to your inquiries on custom orders and new products. 

Many customers who order our photoreceivers use our APD Receiver Support Modules for fast and easy integration 

into their laboratory tests and product prototypes. See page 48 for more information on our support 

modules. 



4 5 



6 7 

Voxtel APDs — Introduction 

Choosing a Voxtel APD: Four product lines 

6 

Voxtel’s avalanche photodiodes (APDs) offer superior response and linear-mode, low-light-level detection 

capabilities that conventional telecommunications APDs and Geiger-mode APDs can’t offer. 

Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often 

prefer the Deschutes FSI or Deschutes BSI APDs and photoreceivers for their modest price and low-noise 

performance at gains up to M = 20. A variety of high-performance and low-light-level applications are best 

served by our Siletz line of products, and our Siletz UHG line offers ultra-high gain and responsivity for the 

detection of very low light levels, including Voxtel’s published results in photon number discrimination (see 

page 49). 

Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated products), 

in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and 

optical input. 

Voxtel’s APD Product Series 

Initial considerations: FSI vs. BSI spectral response and mechanical differences 

Voxtel sells four InGaAs APD product lines: the Deschutes FSI, Deschutes BSI, Siletz, and Siletz UHG 

series. The Deschutes FSI series of APDs are front-side-illuminated (FSI), while the other three series of APDs 

are all back-side-illuminated (BSI). The most important difference between FSI and BSI configuration is that 

the FSI APDs are able to absorb wavelengths below 950 nm, but for applications at 950 nm and above, the BSI 

APDs offer higher spectral responsivity and lower detector capacitance. 

Voxtel’s BSI APDs are supplied on flip-chip ceramic submounts, ready for wire bonding. The submount 

increases footprint and height, but also reduces parasitic capacitance between the BSI APD’s submount bond 

pads relative to the bond pads situated directly on an FSI APD. Also, all of Voxtel’s fiber-coupled assemblies are 

designed for use with our BSI APDs; fiber-coupled FSI receivers are not presently offered as standard products. 

For these reasons, our Deschutes FSI line is preferred by customers who require spectral response superior 

to silicon in the ~800–950 nm range, or who require our smallest APD. 

7 

Voxtel produces a number of high-performance InGaAs APDs, and each is best suited for a particular range 

of applications. This guide discusses the differences between Voxtel’s products and related products for NIR 

detection, as well as the differences among Voxtel’s product lines. 

Silicon vs. Voxtel’s InGaAs APDs 

Extreme low-light-level detection: Siletz UHG 

Siletz UHG products offer ultra-high gain with low excess shot noise, suitable for the detection of very weak 

signals at the near–single photon level, at rates up to about 30 MHz. These features are discussed in more 

detail in Voxtel’s publications in the area of extreme low-light-level detection and photon number discrimination; 

see page 49. 

Voxtel’s APDs are replacing silicon APDs in many applications. Silicon APDs are typically used for the 300– 

1100 nm spectral band, while InGaAs APDs normally cover the 900–1700 nm band. Their response overlaps in 

the 900–1100 nm spectral region, which includes the ubiquitous 1064 nm Nd:YAG solid-state laser line that is 

used in many systems for range finding and target designation. 

Voxtel’s InGaAs APDs are often an attractive alternative to silicon APDs in designing new systems where a fast 

signal rise time is required, and have served many users of silicon APDs in migrating to eye-safe systems at e.g. 

1550 nm while maintaining backwards compatibility with legacy 1064 nm illuminators. However, the detector 

specifications can be considerably different for the two types of APDs, so depending on the application, it may 

not be feasible to use an InGaAs APD as a drop-in-replacement for legacy systems using a silicon APD. 

Voxtel’s InGaAs APDs are often the best choice for low-light-level and/or high-bandwidth applications, though 

understanding the differences between our detectors is important in order to choose the right Voxtel APD for 

a particular application. 

Excess Noise Comparisons 

Excess Noise Factor (F) 

30 

20 

10 

Competitor’s APD 

Voxtel Deschutes FSI 

Voxtel Deschutes BSI 

Voxtel Siletz 

Voxtel Siletz UHG 

k = 0.40 k = 0.20 k = 0.02 

k = 0 

1 

1 10 100 1000 

Gain (M) 

Measured excess noise factor vs. gain for Voxtel’s APDs and competitor’s APD (log scales), including McIntyre 

excess noise factor model for various impact ionization ratios k. 





8 9 

Voxtel’s APD Product Series 

Voxtel’s APD Product Series — Comparison Table 

8 

Responsivity vs. noise in high-performance applications: Deschutes BSI vs. Siletz 

The Deschutes BSI and Siletz lines are preferred for applications requiring the highest possible sensitivity 

for high-speed, low-light level applications that cannot be served by PIN photodiodes or Geiger APDs. These 

high gain-bandwidth products address a balance of tradeoffs for engineering NIR systems in high-speed, 

weak-signal regimes that include cutting-edge applications in 3D imaging (including eye-safe LIDAR), longrange 

optical communications, and science-grade NIR detection. 

The choice of a Deschutes or Siletz APD depends on the other noise sources in the planned receiver system. 

The Deschutes BSI line offers a high-quality APD with superior response relative to competing commercial 

InGaAs APDs, as well as performance superior to InGaAs PIN photodiodes in most conditions. Siletz APD 

products offer superior avalanche gain and low excess noise factors, with the tradeoff of higher dark current. 

These products are the most effective in high-performance applications where higher system noise is unavoidable; 

in these conditions, high gain is needed and the APD’s additional noise contribution is less important. 

Because faster systems typically require the use of noisier amplifiers, the Siletz APD is optimal for highbandwidth 

NIR sensing. 

75-µm 

200-µm 

The following table provides typical specifications for Voxtel’s series of APD products. More detailed information 

can be found on the following pages, and in the listings for individual products on pages 4 and 5. 

Spectral Range, 

λ 

Operating Gain, 

M 

Deschutes 

FSI 

Deschutes 

BSI 

Siletz 

Siletz 

UHG 

Min. suggested

10 11 

Spectral Response Comparisons 

Mechanical Information: APD Die and Submounts 

Deschutes FSI 

0.9 

0.8 

Deschutes BSI, Siletz 

1.0 

Frontside-Illuminated APD Die Layouts 

25 μm 

25 μm 

25 μm 

25 μm 

25 μm 

25 μm 

1 

0 

Responsivity [A/W] 

0.7 

0.6 

0.5 

0.4 

0.3 

0.2 

0.1 

0.0 

800 1000 1200 1400 1600 1800 

Wavelength [nm] 

Responsivity [A/W] 

0.8 

0.6 

0.4 

0.2 

0.0 

900 1100 1300 1500 1700 


80 μm 

160 μm 

175 μm 

113 μm 

Ø 28 μm 

Ø 75 μm 

175 μm 

350 μm 

80 μm 

160 μm 

175 μm 

350 μm 

113 μm 

Ø 76 μm 

Ø 75 μm 

350 μm 

350 μm 

Deschutes FSI frontside-illuminated APDs are delivered as bare die. From left: 30-, 75-, and 200-µm APDs. 

175 μm 

350 μm 

65 μm 

Anode Ø 75 μm 

65 μm 

175 μm 

Ø 200 μm 

175 μm 

350 μm 

1 

1 

Normalized Responsivity 

Siletz UHG 

1 

0.8 

0.6 

0.4 

0.2 

0 

800 900 1000 1100 1200 1300 1400 1500 1600 


Backside-Illuminated APD Submount Layouts 

TEMP SENSE 

B 

E E 

C 

370 µm 

1520 µm 

APD 

ANODE 

CATHODE 

CATHODE 

Backside-illuminated APDs are delivered on submounts. 





Avalanche Photodiodes Deschutes FSI Deschutes FSI Avalanche Photodiodes 

12 

13 

Deschutes FSI VFI1-DAZA 25µm, 6GHz Avalanche Photodiode Deschutes FSI VFI1-JAZA 75µm, 2GHz Avalanche Photodiode 

Min Typical Max Units 

Spectral Range, λ 800 1064–1550 1750 nm 

Active Diameter 25 µm 

Bandwidth 6 GHz 

Operating Gain, M 1 15 20 






1 

2 

Responsivity @ M = 10 

Excess Noise Factor, 

F(M, k) 

λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

A/W 



F(M, k) 

λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

A/W 

1 

3 

Noise Spectral Density @ M = 10 0.15 pA/Hz 1/2 

Dark Current i 2.2 2.6 nA 

Dark Current Dependence on Temperature ii 0.22 dB/K 

Capacitance iii 0.23 pF 

Breakdown Voltage, V iv BR 30 37 40 V 

ΔV BR /ΔT 15 17 19 mV/K 

Absolute Reverse Current 3 mA 

Absolute Forward Current 5 mA 


Dark Current i 5.6 7 nA 

Dark Current Dependence on Temperature ii 0.24 dB/K 

Capacitance iii 0.45 pF 

Breakdown Voltage, V iv BR 30 37 40 V 

ΔV BR /ΔT 15 17 19 mV/K 



Absolute Operating Temperature 

−200 

73 

0–30 

273–303 

52 

325 

°C 

K 


−200 

73 

0–30 

273–303 

52 

325 

°C 

K 

i M = 10, T = 298 K 

ii 250 K < T < 300 K 

iii M > 3 

iv T = 298 K; I dark > 0.1 mA 

i M = 10, T = 298 K 

ii 250 K < T < 300 K 

iii M > 3 

iv T = 294 K; I dark > 0.1 mA 


Avalanche Photodiodes 


Deschutes FSI 


Deschutes FSI 


Avalanche Photodiodes

Avalanche Photodiodes Deschutes FSI Deschutes BSI Avalanche Photodiodes 

14 

15 

Deschutes FSI VFI1-NAZA 

200µm, 200MHz Avalanche Photodiode 

Deschutes BSI VFC1-EBZA 

30µm, 6GHz Avalanche Photodiode 

1 

4 




Bandwidth 200 MHz 




F(M, k) 

λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

A/W 

Parameter Min Typical Max Units 


Active Diameter 30 μm 

Bandwidth 6.0 GHz 

APD Operating Gain, M 1 10 20 

Receiver Responsivity @ M=1 

.66 

.91 

.73 

1.01 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 

Excess Noise Factor, F(M,k) 3.4 / 4.3 M=10, M=15 

Noise Spectral Density @ M=10 .37 pA/Hz 1/2 

Dark Current @ M=1 i 0.80 1.08 1.25 nA 

1 

5 


Total Capacitance ii 35 fF 

Dark Current [A] 6 20 24 nA 

Dark Current Dependence on Temperature [B] 0.19 dB/K 


Breakdown Voltage, V BR 

iii 44 49 55 V 

Capacitance [C] 4.2 pF 


[D] 

30 37 40 V 

ΔV BR /ΔT 15 17 19 mV/K 



ΔV BR /ΔT 30 34 39 mV/K 

Temperature Sensing Diode 

Voltage and ΔV/K iv 0.48 

0.50 

-2.18 mV/K 

0.51 V 

Maximum Instantaneous 

125 µW 

Input Power v 


[A] M = 10, T = 298 K 

[B] 250 K < T < 300 K 

[C] M > 3 

[D] T = 294 K; I dark > 0.1 mA 

−200 

73 

0–30 

273–303 

52 

325 

°C 

K 

i 

Unity referenced from M=10, T=298K 

ii 

M>3 

iii 

T=298K; I dark >0.1 mA 

iv 

Sourcing 10µA, T=298K 

v 

10ns, 1064nm signal @ a 20Hz PRF 

with an APD multiplication gain of M=10 




Deschutes FSI 


Deschutes BSI FSI 



Avalanche Photodiodes Deschutes BSI Deschutes BSI Avalanche Photodiodes 

16 

17 

Deschutes BSI VFC1-JBZA 75µm, 2.5GHz Avalanche Photodiode Deschutes BSI VFC1-NBZA 200µm, 550MHz Avalanche Photodiode 









Responsivity @ M=1 

.66 

.91 

.73 

1.01 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 


.66 

.91 

.73 

1.01 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 

1 

6 

Excess Noise Factor, F(M,k) 

3.4 

4.4 

M=10 

M=15 

Noise Spectral Density @ M=10 0.48 pA/Hz 1/2 


Total Capacitance ii 0.34 pF 


3.4 

4.3 

M=10 

M=15 


Dark Current @ M=1 i 6 8.1 10.0 nA 


1 

7 

Bandwidth 2.0 2.5 3.0 GHz 

Bandwidth 250 550 700 MHz 


iii 

44 49 55 V 


iii 

44 49 55 V 

∆V BR /∆T 30 34 39 mV/K 

∆V BR /∆T 30 34 39 mV/K 



0.50 

-2.18mV/K 

0.51 V 



0.50 

-2.18mV/K 

0.51 V 


1 mW 

Input Power v 


5 mW 

Input Power v 

i 


ii 

M>3 

iii 

T=298K; I dark >0.1mA 

iv 

Sourcing 10μA, T=298K 

v 



i 


ii 

M>3 

iii 


iv 


v 






Deschutes BSI 


Deschutes BSI 



Avalanche Photodiodes Siletz Siletz Avalanche Photodiodes 

18 

19 

Siletz VFP1-EBZA 30µm, 4.0GHz Avalanche Photodiode Siletz VFP1-JBZA 75 µm, 2.3GHz Avalanche Photodiode 








Bandwidth 2.3 2.7 GHz 



1 

8 



.66 

.91 

.73 

1.01 

2.0 

2.9 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 

M=10 

M=40 

Noise Spectral Density @ M=10 .78 pA/Hz 1/2 

Dark Current @ M=1 i 6.6 nA 



.66 

.91 

.73 

1.01 

2.0 

2.9 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 

M=10 

M=40 


Dark Current @ M=1 i 12 23 28 nA 

1 

9 

Total Capacitance ii 35 pF 



iii 

70 74 80 V 


iii 

70 74 80 V 

ΔV BR /ΔT 29 mV/K 



Voltage and ∆V/K iv 0.48 

0.50 

-2.18 mV/K 

0.51 V 



0.50 

-2.18 mV/K 

0.51 V 


125 µW 

Input Power V 


1 mW 

Input Power V 

i 


ii 

M>3 

iii 

T=298K, I dark >0.1mA 

iv 


v 

10ns, 1064nm signal @ a 20Hz PRF with 

an APD multiplication gain of M=10 

i 


ii 

M>3 

iii 


iv 


v 






Siletz 


Siletz 



Avalanche Photodiodes Siletz Siletz UHG Avalanche Photodiodes 

20 

21 

Siletz VFP1-NBZA 200µm, 350MHz Avalanche Photodiode Siletz UHG VFS1-HBZA 50µm, 30MHz Avalanche Photodiode 

2 

0 








.66 

.91 

.73 

1.01 

2.0 

2.9 

.78 

1.04 

A/W 

λ=1064nm 

λ=1550nm 

M=10 

M=40 





iii 

70 74 80 V 




0.50 

-2.18 mV/K 

0.51 V 





Operating Gain, M [A] 1 1000 6000 



F(M, k) 

λ = 1550 nm 3 

iii 


iv 


v 






Siletz 


SiletzUHG 




22 

Siletz UHG 

Packaged APDs 

23 

Siletz UHG VFS1-HBZA 

Spectral Response 

Impulse Response 

Mechanical Information 


2 

2 

Normalized Responsivity 

1 

0.8 

0.6 

0.4 

0.2 

0 

800 900 1000 1100 1200 1300 1400 1500 1600 


Normalized spectral responsivity. 

Normalized Response 

1 

0.5 

0 

Impulse Response 

0 1 2 3 4 5 6 7 8 9 10 

Time [ns] 

TO-46 Package 

.118 

.114 

.012 

.009 

.046 

.042 

.010 max. 

.072 in 

183 mm 

Ø .026 

Ø .020 

.700 

.500 

.010 

.007 

.006 

.000 

3 

Ø .100 

Ø .212 

Ø .209 

Ø .171 

Ø .161 

4 

2 

1 

Ø .048 

Ø .046 

.043 

.031 

.045 

.037 

Pinout 

1) APD Cathode 

2) APD Anode 

3) Ground, T Sense – 

4) T Sense + 

2 

3 

Ø .019 

Ø .016 

45° ± 0.5° 

Output and Gain 

Excess Noise vs. Gain 

SIDE VIEW 

with cap 

TOP VIEW 

header only 

Current [A] 

10 –4 

10 –5 

10 –6 

10 –7 

Light Current 

Dark Current 

Avalanche Gain 

10 5 

10 4 

10 3 

10 2 

10 –8 10 

1 

72 73 74 75 76 77 78 79 80 81 82 

0 500 1000 

Reverse Bias [V] 

Current and gain vs. reverse bias at ~100 nW light power. 

Gain 

Excess Noise Factor, F 

1000 

100 

10 

Siletz UHG SCM-APD 

k = 0.40 (Telecom APD) 

k = 0.02 

k = 0 

Gain (M) 

Excess noise factor of the Siletz UHG VFS1-HBZA as a function 

of gain, compared with standard telecom InGaAs/InP APDs. 

(Note that standard telecom APDs cannot be operated above 

M ~ 15.) 

TO-8 Package 

7.16 mm 

APD Plane 

Ø 0.46 

2.24 ± 0.31 

0.79 

1 4 

0.79 

Active area Ø 1.52 

12 11 10 9 

5.38 

25.40 ± 0.64 

1.91 

9.91 

2.87 

5.72 

9.53 

Pinout 

1) TEC – 

4) TEC + 

9) Temp Sense – 

10) Temp Sense + 

11) APD Anode (P) 

12) APD Cathode (N) 

Ø 15.24 




Siletz UHG 


Siletz UHG 


Packaged APDs Deschutes FSI Deschutes FSI Packaged APDs 

24 

25 

Deschutes FSI VFI1-DCAA 

25µm APD in hermetic TO-46 can 

Deschutes FSI VFI1-JCAA 











λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

A/W 


λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

A/W 

2 

4 


F(M, k) 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

Noise Spectral Density at M = 10 0.15 pA/Hz 1/2 


F(M, k) 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 


2 

5 

Dark Current [A] 2.2 2.6 nA 

Dark Current [A] 5.6 7 nA 



Total Capacitance [C] 0.52 pF 





[D] 

30 37 40 V 


[D] 

30 37 40 V 

ΔV BR /ΔT 15 17 19 mV/K 

ΔV BR /ΔT 15 17 19 mV/K 






−200 

73 

0–30 

273–303 

52 

325 

°C 

K 


−200 

73 

0–30 

273–303 

52 

325 

°C 

K 

[A] M = 10, T = 298 K 

[B] 250 K < T < 300 K 

[C] M > 3 

[D] T = 298 K; I dark > 0.1 mA 

[A] M = 10, T = 298 K 

[B] 250 K < T < 300 K 

[C] M > 3 

[D] T = 294 K; I dark > 0.1 mA 




Deschutes FSI 


Deschutes FSI 


Packaged APDs

Packaged APDs Deschutes FSI Deschutes FSI Packaged APDs 

26 

27 

Deschutes FSI VFI1-NCAA 


Deschutes FSI VFI1-JKAB 

75µm APD in hermetic TO-8 can with 3-stage TEC 










λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

A/W 


λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

A/W 

2 

6 


F(M, k) 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 



F(M, k) 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

Noise Spectral Density at 200 K [A] 16 fA/Hz 1/2 

2 

7 

Dark Current [A] 6 20 24 nA 

Dark Current [B] 5.6 7 nA 


Dark Current Dependence on Temperature [C] 0.24 dB/K 


Total Capacitance [D] 1.4 pF 




[D] 

30 37 40 V 

Rated Package Temperature [E] 218 K 

ΔV BR /ΔT 15 17 19 mV/K 

TEC Maximum Heat Transfer, Q max 

[F] 

0.4 W 


TEC Maximum Cooling, ΔT max 110 K 


TEC Maximum Current, I max 1.4 A 


−200 

73 

0–30 

273–303 

52 

325 

°C 

K 

TEC Maximum Voltage, V max 1.9 V 

Breakdown Voltage, V 

[G] BR 30 37 40 V 

[A] M = 10, T = 298 K 

[B] 250 K < T < 300 K 

[C] M > 3. 

[D] T = 294 K; I dark > 0.1 mA 

ΔV BR /ΔT 15 17 19 mV/K 




−200 

73 

0–30 

273–303 

52 

325 

°C 

K 

[A] M = 10 

[B] M = 10, T = 298 K 

[C] 250 K < T < 300 K 

[D] M > 3 

[E] Guaranteed minimum; colder operation may be possible with caution 

[F] All TEC data @ T = 300 K 

[G] T = 294 K; I dark > 0.1 mA 




Deschutes FSI 


Deschutes FSI 



Packaged APDs Deschutes FSI Deschutes BSI Packaged APDs 

28 

29 

Deschutes FSI VFI1-NKAB 

200µm APD in hermetic TO-8 can with 3-stage TEC 

Deschutes BSI VFC1-JCAA / JKAB 




75µm APD in hermetic 

TO-8 can with 3-stage TEC 






λ = 1550 nm 7.0 7.2 8.0 

λ = 1064 nm 6.0 6.8 7.7 

A/W 



2 

8 


F(M, k) 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

Noise Spectral Density at 200 K [A] 55 fA/Hz 1/2 

Dark Current [B] 6 20 24 nA 



.66 

.91 

.73 

1.01 

3.4 

4.3 

.78 

1.04 

A / W 

λ=1064nm 

λ=1550nm 

M=10 

M=15 

Noise Spectral Density @ M=10 0.48 pA / Hz 1/2 

2 

9 

Dark Current Dependence on Temperature [C] 0.19 dB/K 


Total Capacitance [D] 4.9 pF 




Rated Package Temperature [E] 218 K 


iii 

44 49 55 V 

TEC Maximum Heat Transfer, Q max 

[F] 

0.4 W 

∆V BR /∆T 30 34 39 mV / K 

TEC Maximum Cooling, ΔT max 110 K 

Minimum Internal Temperature -40 °C 

TEC Maximum Current, I max 1.4 A 

TEC Maximum Voltage, V max 1.9 V 


[G] 

30 37 40 V 

ΔV BR /ΔT 15 17 19 mV/K 




−200 

73 

0–30 

273–303 

[A] M = 10 

[B] M = 10, T = 298 K 

[C] 250 K < T < 300 K 

[D] M > 3 

[E] Guaranteed minimum; colder operation may be possible with caution 

[F] All TEC data @ T = 300 K 

[G] T = 294 K; I dark > 0.1 mA 

52 

325 

°C 

K 

TE cooler rating iv 1.9 / 1.2 V / A 


Voltage and ΔV/K v 0.48 

0.50 

-2.18mV / K 

0.51 V 


1 mW 

Input Power vi 

i 


ii 

M>3 

iii 


iv For VFC1-xKAB devices, package at 298K 

v 


vi 






Deschutes FSI 






30 

Deschutes BSI 

Siletz 


31 

Deschutes BSI VFC1-NCAA / NKAB 


Siletz VFP1-JCAA / JKAB 




Specifications 











3 

0 



.66 

.91 

.73 

1.01 

3.9 

7.9 

.78 

1.04 

A / W 

λ=1064nm 

λ=1550nm 

M=10 

M=20 



.66 

.91 

.73 

1.01 

2.0 

2.9 

.78 

1.04 

A / W 

λ=1064nm 

λ=1550nm 

M=10 

M=40 

3 

1 



Dark Current @ M=1 i 6 8.1 10.0 nA 







iii 

44 49 55 V 


iii 

70 74 80 V 

∆V BR /∆T 30 34 39 mV / K 

∆V BR /∆T 29 mV / K 







0.50 

-2.18mV / K 

0.51 V 



0.50 

-2.18mV / K 

0.51 V 


5 mW 



1 mW 


i 


ii 

M>3 

iii 



v 


vi 



i 


ii 

M>3 

iii 



v 


vi 






Deschutes BSI 


Deschutes BSI 




32 

Siletz 

APD Photoreceivers 

33 

Siletz VFP1-NCAA / NKAB 









Voxtel’s line of APD photoreceivers achieve industry-leading sensitivity with bandwidth ranging from the MHz 

to GHz scales. These receivers are hermetically sealed in TO-8 and TO-46 packages, and integrate a Voxtel APD 

with a transimpedance amplifier (TIA) to provide wideband, low-noise preamplification of signal current from 

the APD. The APD and TIA are integrated on a ceramic submount, lowering parasitic capacitance and thereby 

maximizing bandwidth and minimizing noise. 

The receivers integrate a calibrated temperature sensor, capacitive decoupling, separate package and circuit 

grounding, and include differential output to allow users easy integration into their system electronics. 

Photoreceivers in TO-8 packages also include thermoelectric cooling to stabilize the APD gain over the range 

of application environments. 

3 

2 



.66 

.91 

.73 

1.01 

2.0 

2.9 

.78 

1.04 

A / W 

λ=1064nm 

λ=1550nm 

M=10 

M=40 

Typical Voxtel Photoreceivers 

3 

3 






iii 

70 74 80 V 

∆V BR /∆T 29 mV / K 





0.50 

-2.18mV / K 

0.51 V 


5 mW 


Typical Block Diagram 

i 


+APD 

TEC+ 

ii 

M>3 

iii 



v 


vi 



N/C 

N/C 

TSense 

TSense+ (B/C) 

TSense– (E) 

V CC 

TEC– 

Gnd 

Out+ 

Out– 

Gnd 




Deschutes BSI 


Deschutes Siletz BSI 




34 

Deschutes FSI 


35 


Deschutes FSI RDI1-NJAC 

200µm, 200MHz Photoreceiver 

TO-8 Package, Rev C 

TO-46 Package 


3 

4 

2.09 mm 

TO-8 Package, Rev F 

2.39 ±0.15mm 

6.35 mm 

0.80 mm 

5.08 mm 

0.80 mm 

2.54 mm 

12 

123 

10.16 mm 

Ø 15.25 mm 

Ø 1.50 mm 

SIDE VIEW (with cap) 

Ø 0.45 mm 

4.06 mm 

0.38 mm 

6.65 ±0.14mm 

0.38 ±0.03mm 

SIDE VIEW 

(with cap) 

BOTTOM VIEW 

1) Gnd 

2) +APD 

3) TEC– 

4) TSense– 

5) TEC+ 

6) TSense+ 

0.80 mm 

5.08 mm 

7) Out– 

8) Gnd 

9) Out+ 

10) V CC +3.3V 

11) N/C 

12) N/C 

0.80 mm 

2.54 mm 

1 2 3 

12 

10.16 mm 

Ø 15.25 mm 

BOTTOM VIEW 

1.4 

Ø 1.50 mm 

Ø 0.45 mm 

57° 

1) Gnd 

2) +APD 

3) TEC+ 

4) TSense– 

5) TEC– 

6) TSense+ 

Ø 5.31 mm 

Ø 4.22 

Ø 2.54 

82° 82° 

BOTTOM VIEW 

57° 

3 

4 

7) Out– 

8) Gnd 

9) Out+ 

10) V CC +3.3V 

11) N/C 

12) N/C 

5 

1 

TOP VIEW 

header only 

2 

1 

5.38 

Pinout 

1) DOUT 

2) VDD 

3) V+ APD 

4) DOUT B 

5) GND 

1.37 

SIDE VIEW 

with cap 

2.70 

0.77 

4.70 

2.55 





Receiver Responsivity 

@ M = 10 


F(M, k) 

Noise Equivalent Power 

at M = 20 

λ = 1550 nm 132 

λ = 1064 nm 125 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

λ = 1550 nm 3.1 

λ = 1064 nm 3.3 

APD Dark Current @ M = 10 6 20 24 nA 

Low-Frequency Cutoff [A] 30 kHz 

APD Breakdown Voltage, V BR 

[B] 

30 37 40 V 

kV/W 

ΔV BR /ΔT 15 17 19 mV/K 

TEC Power 

0.8 A @ 2.2 V 

TEC Cooling, ΔT max 43 K 

TIA Power 

20 mA @ 3.3 V 

Thermal Load 66 mW 

Output Impedance [C] 60 75 90 Ω 

TIA AC Overload 2.0 mA P–P 

nW 

3 

5 

Fiber Optic Package 

0.80 mm 

5.08 mm 

0.80 mm 

12 

1 2 3 

Ø 1.50 mm 

Ø 0.45 mm 

6.35 mm 

Ø 16.50 mm 

17.14 mm 

Ø 3.81 mm 

Window Thickness 0.5–0.8 mm 

Window Transparency 

[A] −3 dB, 1 µA input 

[B] T = 295 K 

[C] Single-ended; 150 Ω differential 

λ = 1550 nm 98% 

λ = 1064 nm 95% 

2.54 mm 

10.16 mm 

0.70 mm 

Ø 8.00 mm 

Ø 15.25 mm 

12.83 mm 3.61 mm 1000 mm 

Ø 16.50 mm 

BOTTOM VIEW 



SIDE VIEW 


TOP VIEW 

Siletz 


Siletz 




36 

Deschutes FSI 

Deschutes BSI 


37 

Deschutes FSI RDI1-JJAC 


Deschutes BSI RVC1-NJAF 

2 0 0 µ m , 1 2 0 M H z P h o t o r e c e i v e r 



3 

6 






@ M = 10 


F(M, k) 

λ = 1550 nm 132 

λ = 1064 nm 125 

M = 5 2.1 

M = 10 3.4 

M = 15 4.3 

kV/W 





Receiver Responsivity @ M=10 i 272/340 kV/W at 1064/1550 nm 

Noise Equivalent Power @ M=20 3.1/2.4 nW at 1064/1550 nm 

Low Frequency Cutoff 7 25 kHz 

APD Breakdown Voltage, V BR 45 50 55 V @ 295 K 

TEC ∆T 40 K @ 295 K 

TEC Supply 1.8/1.9 A/V 

3 

7 

Noise Equivalent Power 

at M = 20 

λ = 1550 nm 3.1 

λ = 1064 nm 3.3 

nW 

Temp Sensing Diode 

Voltage and ∆V/K ii 0.48 

0.50 

-2.18 mV/K 

0.51 V 

APD Dark Current @ M = 10 5.6 7 nA 

TIA Power 22 28 36 mA @ 3.3 V 

Low-Frequency Cutoff [A] 30 kHz 

Output Impedence iii 50 67 80 Ω 


[B] 

30 37 40 V 

Overload/Saturation Power iv 100 300 μW 

ΔV BR /ΔT 15 17 19 mV/K 

TEC Power 

0.8 A @ 2.2 V 

TEC Cooling, ΔT max 43 K 

Max Instantaneous Input Power v 5 mW 

Window Thickness 0.76 0.94 1.12 mm 

Window Transparency 95/98% 1064/1550 nm 

TIA Power 

20 mA @ 3.3 V 

Thermal Load 66 mW 

Output Impedance [D] 60 75 90 Ω 

TIA AC Overload 2.0 mAP–P 

Window Thickness 0.5–0.8 mm 

i 

10MHz, -40dBm signal 

ii 


iii 

Single-ended; 100Ω differential 

iv 

1550nm signal with an APD multiplication gain of M=10 

v 

APD multiplication gain of M=10 with a 10ns 

1064nm signal @ a 20Hz PRF 

Window Transparency 

λ = 1550 nm 98% 

λ = 1064 nm 95% 

[A] −3 dB, 1 µA input 

[B] T = 295 K 

[C] Single-ended; 150 Ω differential 




Siletz 


Siletz 


APD Photoreceivers Deschutes BSI Deschutes BSI APD Photoreceivers 

38 39 

Deschutes BSI RYC1-NJAF 


Deschutes BSI RDC1-NJAF 










APD Operating Gain, M 1 10-15 20 






3 

8 

Low Frequency Cutoff ii 30 kHz 

APD Breakdown Voltage, V BR 45 50 55 V @ T = 295 K 

TEC ∆T 40 K @ T = 295 K 


Low Frequency Cutoff 30 kHz 


TEC ∆T 40 K @ 295 K 


3 

9 

Temp Sensing Diode, 

Voltage and ∆V/K iii 0.48 

0.50 

-2.18 mV/K 

0.51 V 



0.50 

-2.18 mV/K 

0.51 V 

TIA Power 25 mA @ 5V 

TIA Power 20 mA @ 3.3 V 

Output Impedence iv 40 50 60 Ω 

Output Impedance iii 75 90 Ω 

Overload/Saturation Power v 20 35 μW 

Overload/Saturation Power iv 100 µW 

Max Instantaneous Input Power vi 5 mW 



Input Power v 5 mW 



i 


ii 

-3dB, 1µA input 

iii 


iv 


v 

1550nm signal with APDmultiplication gain of M=10 

vi 

APD multiplication gain of M=10 with a 10ns 

1064nm signal @ 20Hz PRF 


i 


ii 


iii 


iv 


v 

APD multiplication gain of M=10 with a 10ns 1064nm 

signal @ a 20Hz PRF 




Deschutes FSI 


APD Receivers


40 

Deschutes BSI 

Deschutes BSI 


41 

Deschutes BSI RDC1-JJAF 

7 5 µ m , 5 8 0 M H z P h o t o r e c e i v e r 








Linearity of Response 

Responsivity [kV/W] 

250 

200 

150 

100 

50 

M =20 

M =10 

Avg. 

95% 

90% 

Avg. 

95% 

90% 

4 

0 

Low Frequency Cutoff 30 kHz 


TEC ∆T 40 K @ 295 K 




0.50 

-2.18 mV/K 

0.51 V 


Output Impedance iii 75 90 Ω 



Input Power v 1 mW 



i 


ii 


iii 


iv 


v 

APD multiplication gain of M=10 with a 10ns 1064nm 

signal @ a 20Hz PRF 

0 

0.1 0.2 0.3 0.5 13 2 

Signal Power [µW] 

Linearity of response in the Deschutes BSI photoreceiver, 

model RDC1-JJAF. 20‐MHz modulated signal, 1064nm. 

RVC1-NJAF Bandwidth 

RVC1-NJAA Bandwidth 

1000 


@1550 nm [kV/W] 

M=10 

RYC1-NJAF Bandwidth 

1,000 

100 

M=10 

M=20 

10 

1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 

Frequency [Hz] 

4 

1 

Receiver Responsivity [kV/W] 

100 

M=20 


APD Receivers 


Deschutes FSI 

10 

1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 

Frequency [Hz] 






42 

Siletz 

Siletz 


43 

Siletz RDP1-NJAF 


Siletz RIP1-NJAF 

200µm, 1GHz Photoreceiver 











Receiver Responsivity @ M=40 400/560 kV/W at 1064/1550 nm 


Noise Equivalent Power @ M=40 10/8 nW at 1064/1550 nm 


4 

2 

Low Frequency Cutoff i 30 kHz 


TEC ∆T 40 K @ T = 298 K 




TEC ∆T 40 K @ T = 298 K 


4 

3 



0.50 

-2.18 mV/K 

0.51 V 



0.50 

-2.18 mV/K 

0.51 V 



Output Impedance iii 60 75 90 Ω 

Output Impedance iv 42.5 50 57.5 Ω 


Overload/Saturation Power v 100 µW 


5 mW 

Input Power v 





i 


ii 


iii 


iv 


v 

10ns, 1064nm signal @ a 20Hz PRF with an APD 

i 


ii 

13dB, 40µA input 

iii 


iv 


v 

1550nm signal with an APD multiplication 

multiplication gain of M=10 

gain of M=10 

vi 

10ns, 1064nm signal @ a 20Hz PRF with an 

APD multiplication gain of M=10 




Deschutes BSI 


Deschutes BSI 




44 

Siletz 

Siletz 


45 

Siletz RIP1-JJAF 

75µm, 2.2GHz Photoreceiver 

Siletz R2P1-JCAA 

75µm, 1.5GHz Ball-Lens-Coupled Photoreceiver 








Effective Diameter 300 



Receiver Responsivity @ M=40 88/115 kV/W at 1064/1550 nm 




4 

4 

Low Frequency Cutoff i 65 kHz 


ii 

70 74 80 V 

TEC ∆T 40 K @ T = 298 K 





∆V BR /TEC ∆T 29 K @ T = 298 K 

4 

5 



0.50 

-2.18 mV/K 

0.51 V 


Output Impedance iv 42.5 50 57.5 Ω 

Overload/Saturation Power v 100 µW 



TIA Power 20 mA@3.3V 

Output Impedance iii 40 50 60 Ω 


Max Instantaneous Input Power v 1 mW 




i 


ii 

T=295K 

iii 


iv 


v 


vi 

10ns, 1064nm signal @ a 20Hz PRF with an APD 

i 


ii 


iii 


iv 


v 

10ns, 1064nm signal @ a 20Hz PRF with an APD multiplication gain of M=10 

multiplication gain of M=10 




Siletz 


Siletz 




46 

Siletz 

Siletz 


47 

Siletz R2P1-JCAA 

Siletz RIP1-JJAFF 

1 

0.8 

0.7 

Siletz RIP1-JJQF 

Normalized Response 

0.8 

0.6 

0.4 

0.2 

Response [V] 

0.6 

0.5 

0.4 

0.3 

0.2 

0.1 

0 

Bit Error Rate 

0 

−0.1 

4 

6 

−400 −300 −200 −100 0 100 200 300 400 

Siletz RDP1-NJAF 

Position [µm] 

0 5 10 15 20 25 

Time [ns] 

Siletz RIP1-JJAF 

Bit Error Rate 

10 –1 

10 –2 

10 –3 

10 –4 

10 –5 

10 –6 

10 –7 

10 –8 

10 –9 

Bit Rate 

2.488 Gb/s 

2.125 Gb/s 

622 Mb/s 

156 Mb/s 

4 

7 

10 –10 

10 –11 

Siletz RIP1-NJAF 


@1550 nm [kV/W] 

M = 10 

M = 40 

10 –12 

–50 –45 –40 –35 

Opcal Power [dBm] 

Bit error rate (BER) vs. input optical power for the RIP1-JJAC receiver; applies 

also to RIP1-JJQC. 20‐MHz modulated signal, 1064 nm. 

100 


@1550 nm [kV / W] 

10 

M=10 

M=40 

1 10 100 1,000 10,000 

Frequency [MHz] 

1 

1 10 100 1,000 10,000 

Frequency [MHz] 




Siletz 


Siletz 




48 

References 

49 

APD Receiver Support Electronics Modules 

Voxtel’s Receiver Support Electronics Modules provide an easy way to operate our TO‐8–packaged receivers 

without having to design and build custom optics. They can be used as optical receiver modules (ORMs) for 

system prototyping, or for incoming inspection, test, and characterization of APD receivers. 

These modules include a 5V AC–DC converter to provide power and grounding, and a grounding plug for 

additional optional grounding. The bias supplied to the receiver can be monitored through a BNC connection 

on the back plate, and is adjustable if necessary using a potentiometer. When the module is ordered together 

with a receiver, the module will be shipped with the supply voltage adjusted optimally for that receiver. 

Support Module: Functional Diagram 

APD Receiver Support Module 

References 

[1] R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Transactions on Electron Devices 

13(1), 164–168 (1966). 

Single-Photon Counting: Voxtel Publications 

[A] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222, 

72221L (2009). 

[B] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD 

Receivers,” Proceedings of SPIE 7320, 732012 (2009). 

4 

8 

APD-TIA Receiver (TO-8) 

CTRL A 

CTRL B 

V APD 

R T 

TEC + 

APD Bias 

RT 

GND C 

TEC – 

V +3.3V 

TEC Bias 

Preamp Bias 

APD Bias Monitor 

APD Bias Control 

5V, 3A in 

4 

9 

GND A 

OUTB 

OUT 

OutB 

Out 

GND B 

Support Module: Mechanical Information 




Siletz 


Siletz 



50 

©Voxtel, APD Receivers 

Inc. 2012 

Siletz

APD Photoreceivers - Voxtel

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