APD Photoreceivers - Voxtel
APD Photoreceivers - Voxtel
APD Photoreceivers - Voxtel
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Avalanche Photodiodes Siletz Siletz Avalanche Photodiodes<br />
18<br />
19<br />
Siletz VFP1-EBZA 30µm, 4.0GHz Avalanche Photodiode Siletz VFP1-JBZA 75 µm, 2.3GHz Avalanche Photodiode<br />
Parameter Min Typical Max Units<br />
Parameter Min Typical Max Units<br />
Spectral Range, λ 950 1000–1600 1750 nm<br />
Spectral Range, λ 950 1000–1600 1750 nm<br />
Active Diameter 30 μm<br />
Active Diameter 75 μm<br />
Bandwidth 4.0 GHz<br />
Bandwidth 2.3 2.7 GHz<br />
<strong>APD</strong> Operating Gain, M 1 20 40<br />
<strong>APD</strong> Operating Gain, M 1 20 40<br />
1<br />
8<br />
Responsivity @ M=1<br />
Excess Noise Factor, F(M,k)<br />
.66<br />
.91<br />
.73<br />
1.01<br />
2.0<br />
2.9<br />
.78<br />
1.04<br />
A/W<br />
λ=1064nm<br />
λ=1550nm<br />
M=10<br />
M=40<br />
Noise Spectral Density @ M=10 .78 pA/Hz 1/2<br />
Dark Current @ M=1 i 6.6 nA<br />
Responsivity @ M=1<br />
Excess Noise Factor, F(M,k)<br />
.66<br />
.91<br />
.73<br />
1.01<br />
2.0<br />
2.9<br />
.78<br />
1.04<br />
A/W<br />
λ=1064nm<br />
λ=1550nm<br />
M=10<br />
M=40<br />
Noise Spectral Density @ M=10 1.46 pA/Hz 1/2<br />
Dark Current @ M=1 i 12 23 28 nA<br />
1<br />
9<br />
Total Capacitance ii 35 pF<br />
Total Capacitance ii 0.23 pF<br />
Breakdown Voltage, V BR<br />
iii<br />
70 74 80 V<br />
Breakdown Voltage, V BR<br />
iii<br />
70 74 80 V<br />
ΔV BR /ΔT 29 mV/K<br />
ΔV BR /ΔT 29 mV/K<br />
Temperature Sensing Diode<br />
Voltage and ∆V/K iv 0.48<br />
0.50<br />
-2.18 mV/K<br />
0.51 V<br />
Temperature Sensing Diode<br />
Voltage and ∆V/K iv 0.48<br />
0.50<br />
-2.18 mV/K<br />
0.51 V<br />
Maximum Instantaneous<br />
125 µW<br />
Input Power V<br />
Maximum Instantaneous<br />
1 mW<br />
Input Power V<br />
i<br />
Unity referenced from M=10, T=298K<br />
ii<br />
M>3<br />
iii<br />
T=298K, I dark >0.1mA<br />
iv<br />
Sourcing 10µA, T=298K<br />
v<br />
10ns, 1064nm signal @ a 20Hz PRF with<br />
an <strong>APD</strong> multiplication gain of M=10<br />
i<br />
Unity referenced from M=10, T=298K<br />
ii<br />
M>3<br />
iii<br />
T=298K, I dark >0.1mA<br />
iv<br />
Sourcing 10µA, T=298K<br />
v<br />
10ns, 1064nm signal @ a 20Hz PRF<br />
with an <strong>APD</strong> multiplication gain of M=10<br />
<strong>Voxtel</strong> Catalog, rev 03, 06/2012 ©<br />
Avalanche Photodiodes<br />
<strong>Voxtel</strong> makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.<br />
Siletz<br />
<strong>Voxtel</strong> Catalog, rev 03, 06/2012 ©<br />
Siletz<br />
<strong>Voxtel</strong> makes no warranty or representation regarding its products’ specific application suitability and may make changes to the products described without notice.<br />
Avalanche Photodiodes
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