IR Detectors Catalogue - VIGO System SA

129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland; tel. +48 22 733 54 20; fax +48 22 733 54 26; e-mail: info@vigo.com.pl 1 

Please note: the information contained in this document is subject to change without further notification. VIGO System reserves the right to alter the performance and any resulting specifications.VS-14-01-27MB

Table of Contents 

• Symbols.............................................................................................................................................................................3 

• Glossary of terms...............................................................................................................................................................4 

• Detector module & preamplifier parameters......................................................................................................................5 

• TE cooling .........................................................................................................................................................................6 

◦ Temperature sensor....................................................................................................................................................6 

◦ TEC controllers...........................................................................................................................................................7 

• Optical immersion .............................................................................................................................................................8 

• Applications........................................................................................................................................................................8 

• Preamplifiers for IR photodetectors and integreted detection modules.............................................................................9 

• Custom engineering/design.............................................................................................................................................11 

• Detector packages...........................................................................................................................................................12 

• Precautions for use..........................................................................................................................................................15 

• Order code.......................................................................................................................................................................16 

• Data sheets of IR detectors.............................................................................................................................................19 

• Preamplifiers....................................................................................................................................................................42 

• TEC controllers................................................................................................................................................................58 

• Power suppliers...............................................................................................................................................................64 

• Mechanical accessories...................................................................................................................................................72 

• Warranty..........................................................................................................................................................................73 

• Contact and distributors...................................................................................................................................................74 

Feature 

Optimal wavelength (λopt, µm) 

Parameter 

Series 3 3.4 4 5 6 8 9 10.6 12 13 

PC-λopt 

PC-2TE-λopt 

PC-3TE-λopt 

PCI-λopt 

PCI-2TE-λopt 

PCI-3TE-λopt 

PCQ-λopt 

PEM-λopt 

PEMI-λopt 

PV-λopt 

PV-2TE-λopt 

PV-3TE-λopt 

PV-4TE-λopt 

PVI-λopt 

PVI-2TE-λopt 

PVI-3TE-λopt 

PVI-4TE-λopt 

PVM-λopt 

PVM-2TE-λopt 

PVMI-λopt 

PVMI-2TE-λopt 

Cooling 

Operating 

Temperature 

Immersion 

Lens 

D*, cmHz 1/2 /W 2.0x10 9 1.0x10 9 3.0x10 8 2.0x10 7 9.0x10 6 uncooled ~300K no 20 

τ, ns 1000 500 200 2 1 

D*, cmHz 1/2 /W 2.0x10 10 1.0x10 10 3.0x10 9 4.5x10 8 1.4x10 8 4.5x10 7 9.0x10 6 2TE ~230K no 21 

τ, ns 4000 2000 1000 20 10 2 2 

D*, cmHz 1/2 /W 1.5x10 9 2.5x10 8 9.0x10 7 6.0x10 7 3TE ~210K no 22 

τ, ns 7 5 5 4 

D*, cmHz 1/2 /W 6.0x10 9 4.0x10 9 1.0x10 9 1.0x10 8 9.0x10 7 uncooled ~300K yes 23 

τ, ns 1000 500 200 2 1 

D*, cmHz 1/2 /W 4.0x10 10 2.0x10 10 1.0x10 10 4.0x10 9 1.4x10 9 4.5x10 8 2.3x10 8 2TE ~230K yes 24 

τ, ns 4000 2000 1000 20 10 2 2 

D*, cmHz 1/2 /W 6.0x10 9 2.5x10 9 9.0x10 8 4.5x10 8 3TE ~210K yes 25 

τ, ns 7 5 5 4 

D*, cmHz 1/2 /W 9.0x10 6 uncooled ~300K no 26 

τ, ns 1 

D*, cmHz 1/2 /W 1.0x10 7 uncooled ~300K no 27 

τ, ns 1 

D*, cmHz 1/2 /W 5.0x10 7 uncooled ~300K yes 27 

τ, ns 1 

D*, cmHz 1/2 /W 6.5x10 9 5.0x10 9 3.0x10 9 1.0x10 9 5.0x10 8 4.0x10 7 uncooled ~300K no 28 

τ, ns 20 20 20 20 15 8 


τ, ns 20 20 20 20 15 8 6 


τ, ns 20 20 20 20 15 8 6 


τ, ns 20 20 20 20 15 8 6 

D*, cmHz 1/2 /W 5.0x10 10 4.5x10 10 2.0x10 10 9.0x10 9 4.0x10 9 4.0x10 8 uncooled ~300K yes 32 

τ, ns 20 20 20 20 15 8 


τ, ns 20 20 20 20 15 8 6 


τ, ns 20 20 20 20 15 8 6 


τ, ns 20 20 20 20 15 8 6 

D*, cmHz 1/2 /W 6.0x10 7 1.0x10 7 uncooled ~300K no 36 

τ, ns 4 1.5 

D*, cmHz 1/2 /W 3.0x10 8 1.0x10 8 2TE ~230K no 37 

τ, ns 4 3 

D*, cmHz 1/2 /W 3.0x10 8 1.0x10 8 uncooled ~300K yes 38 

τ, ns 4 1.5 

D*, cmHz 1/2 /W 2.0x10 9 1.0x10 9 2TE ~230K yes 39 

τ, ns 4 3 

Page 

PVMI-3TE-λopt 

D*, cmHz 1/2 /W 3.0x10 9 1.5x10 9 3TE ~210K yes 39 

τ, ns 4 3 



Symbols 

A detector active area t r rise time 

C i detector capacitance t up power-on to LOCK indicator time 

D* normalized detectivity V n noise voltage 

e n preamplifier input noise voltage density V out output voltage swing 

f o noise measurement frequency V off output voltage offset 

f hi cut-off frequency V sup power supply voltage 

f lo cut-on frequency V tec Maximum TEC output voltage 

I current Z d detector reactance 

I dark dark current λ peak peak wavelength [µm] 

I in total input noise current λ opt optimal wavelength [µm] 

I n noise current λ con cut-on wavelength [µm] 

i n noise current density λ coff cut-off wavelength [µm] 

I sup power supply current τ time constant [ns] 

I tec maximum TEC output current 

I' 

current flowing through detector resistance 

IR 

k 

K i 

PC 

PCI 

PCQ 

PEM 

PV 

PVI 

PVM 

infrared: 

MWIR – Mid-Wavelength Infrared: 2-6 µm 

LWIR – Long-Wavelength Infrared: 8-14 µm 

Boltzmann's constant (1.3806·10 -23 J/K) 

transimpedance 

photoconductive detectors 

photoconductive detectors optically immersed 

quadrant photoconductors 

photoelectromagnetic detectors 

photovoltaic detectors 

photovoltaic optically immersed detectors 

photovoltaic multiple junction detectors 

PVMI photovoltaic multiple junction detectors optically 

immersed 

R i 

R L 

R out 

R s 

R sh 

R sq 

R v 

T 

T r 

current responsivity 

load resistance 

output impedance 

series resistance 

detector resistance 

sheet resistance 

voltage responsivity 

temperature 

transimpedance 



Glossary of terms 

General definition 

Hg 1-xCd xTe: Known also as Mercury Cadmium Telluride 

(MCT), CdHgTe, (Cd,Hg)Te or Mercadtel, an alloy of 

CdTe and HgTe. Change of the CdTe to HgTe ratio 

(composition or x-value) can be used to tune optical 

absorption cut-off wavelength in the wide range from 

ultraviolet (UV) to deep infrared (IR). Cooling shifts the 

cut-off wavelength towards long wavelengths. Detectors 

from VIGO System (VIGO for short) are based on 

complex graded gap MCT structures optimized for MWIR 

(3-5 µm) and LWIR (8-14 µm) ranges. 

Detector formats 

Square and rectangular formats are used for PC, PEM 

and PV devices. Round shapes are also used for some 

PV devices. Custom shapes are available on request. 

Photovoltaic detectors (PV or PVM) 

Photovoltaic devices (photodiodes) are semiconductor 

structures with one (PV) or multiple (PVM) homo- or 

heterojunctions. Absorbed photons produce electron-hole 

pairs, resulting in external photocurrent. Reverse bias 

voltage may be applied to increase differential resistance, 

reduce the shot noise, improve high frequency 

performance and dynamic range. Reverse bias may 

increase responsivity in some devices. Unfortunately, at 

the expense of flicker (1/f) noise in most cases. PV 

detectors are more vulnerable to electrostatic discharges 

than photoconductors. 

Photoelectromagnetic detectors (PEM) 

Photovoltaic devices based on a photoelectromagnetic 

effect. It consists in spatial separation of optically 

generated electrons and holes in the magnetic field. They 

do not require electrical bias and show no flicker noise. 

The devices are typically used as fast uncooled detectors 

of the long wavelength radiation. 

Photoconductive detectors (PC) 

Photoconductive Devices (PC) are detectors based on 

the photoconductive effect. Infrared radiation generates 

charge carriers in the semiconductor active region 

decreasing its resistance. The resistance change is 

sensed as a voltage change by applying a constant 

current bias. The optimum bias current is specified in the 

Final Test Report and depends on the detector size, 

operating temperature and spectral characteristics. 

Detector parameters 

Responsivity- width product: R v w 

The voltage responsivity of PC and PEM is inversely 

proportional to the width of detectors. Therefore the 

normalized responsivity can be expressed as the 

responsivity-width product. 

Current and voltage responsivity: R i, R v 

current signal d 

R i = (in A/W) 

incident power d 

voltage signal d 

R v = (in V/W) 

incident power d 

Current responsivity is typically used for description of 

photovoltaic detectors and voltage responsivity for 

description of photoconductors and photoelectromagnetic 

detectors. 

Dark current: I dark 

The current that flows in a photodetector when it is not 

receiving any light. It may increase as the temperature 

rises. 

The small amount of current that flows through a photonic 

semiconductor device when it is not operating. Also 

known as leakage current. 

Maximum bias current: I max 

The maximum current that can flow through a 

photoconductive or photovoltaic detector without a risk of 

its damage. 

Noise current and noise voltage: 

I n ,V n 

Root mean square noise current or voltage. 

I n 

= I 2 n 

t V n 

=U 2 n 

t 

Noise current and noise voltage density: 

I n 

i n 

= 

f 

v n 

= V n 

f 

i n 

,v n 

1/f corner frequency 

Flicker or 1/f noise is a frequency dependent noise. Its 

power is proportional to 1 where b ~ 1. Below the 

f b 

corner frequency the noise of detectors is dominated by 

flicker noise. 

Normalized detectivity: D* 

The signal-to-noise ratio (SNR) at a detector output 

normalized to 1 W radiant power, a 1 cm 2 detector optical 

area and a 1 Hz bandwidth. The higher the D* value, the 

better the detector. 

D *= R i 

i n 

A= R v 

v n 

A in cmHz1/2 /W 

Operating temperature: T 

Detector active element temperature. 

Optical area: A 

The area from which the incident radiant power is 

collected. 

For immersed detector it is different from physical 

detector area (see Optical immersion chapter). 

Detector capacitance C i 

Parallel capacitance in the detector structure. 



Spectral response 

Spectral responsivity or spectral detectivity. In detector 

data sheets it is presented as Rv(λ), Ri(λ) or D*(λ). It can 

be characterized by cut-on, cut-off, optimum and peak 

wavelength. 

Peak wavelength: λ peak 

λ peak is a wavelength of detector maximum responsivity. 

Optimum wavelength: λ opt 

The wavelength a device is optimized for. 

longer than λ peak. 

Typically 

Cut-on Wavelength: λ con 

λ con is the shortest wavelength at which a detector 

responsivity reaches 10% of the peak value. 

Cut-off wavelength: λ coff 

λ coff is the longest wavelength at which a detector 

responsivity reaches 50% of the peak value. 

Resistance–area product: RA 

Area-normalized detector resistance. Typical photodiodes 

(PV series) resistance decreases proportionally to their 

area increase. Therefore, the normalized resistance can 

be expressed as the RA. In contrast, the 

PVM series devices are characterized by sheet 

resistance. 

Time constant: τ 

Typically, detector time response can be described by 

one pole filter. The time constant is the time it takes 

1 

detector to reach 

e ≈37% of the initial signal value. 

Time constant is related to the 3dB high frequency cut-off 

f hi: 

τ= 1 

(2π f hi ) 

The time constant is related to 10 – 90% rise time t r: 

t r =2.2 

Series resistance: R s 

Parasitic resistance in photodiodes. Its contribution to the 

total diode resistance may be significant for long 

wavelength and near room operating temperatures 

diodes, especially with large active area. 

Sheet resistance: R sq 

The normalized resistance expressed in ohm/square. It is 

used to normalize the resistance for different size devices 

with non-square active area 

R sq = Rw 

l 

Detector module & preamplifier 

parameters 

Output voltage responsivity: R V 

The output voltage divided by incident optical power on 

the detector. 

Output voltage swing: V out 

The maximum and minimum voltages where preamplifier 

works in linear range. 

GND 

Point of zero potential. For standard preamplifiers is 

common power supply and signal ground. 

Cut-On frequency: f lo 

a minimum frequency at which a module responsivity (or 

preamplifier gain) reaches -3dB of the peak value. 

Cut-Off frequency: f hi 

a maximum frequency at which a module responsivity (or 

preamplifier gain) reaches -3dB of the peak value. 

Output noise 

Noise voltage at preamplifier output. 

Average output noise 

= 

density 

∫ 

f 2 

f V 

1 

out 

V n 

2 f df 

f 2 

−f 1 

Noise measurement frequency: f 0 

frequency at which output voltage noise is measured 

selectively. 

Output noise density at specific frequency V n(f 0) 

Noise voltage density measured at a given frequency. 

Transimpedance: T r 

current to voltage conversion factor (ratio). 

T r = V out 

I in 

Preamplifier input noise current: i n 

noise current generated by equivalent current source in 

parallel with ideal preamplifier input. 

Preamplifier input noise voltage: e n 

noise voltage generated by equivalent voltage source in 

series with ideal preamplifier input. 

Total input noise current: I in 

Parameter taking into consideration all noise sources 

related to the input. 

I in =i 2 PA i 2 d = V n0 

T r 

Output impedance: R out 

equivalent impedance exhibited by its output terminals. 



Load resistance: R L 

optimal resistance of the load: amplifier's or the 

measurement device's. 

Output voltage offset: V off 

DC component of the output voltage. 

Standard TE coolers parameters: 

2TE 3TE 4TE 

T detector, K ~230 ~210 ~195 

V max, V 1.3 3.6 8.3 

I max, A 1.2 0.45 0.5 

Q max, W 0.36 0.27 0.28 

∆T max, K 92 114 125 

Power supply voltage: V sup 

supply voltage required for correct preamplifier operation. 

±20% tolerance is allowed. 

Power supply current: V sup 

supply current consumption during correct preamplifier 

operation. 

Coupling type 

Preamplifier coupling type. It may be AC for alternate 

current or DC for direct current. 

Power supply input (+) and (-) 

polarity of the power supply related to the ground. 

Swapping supply connectors may lead to module 

damage. 

Temperature sensor inputs 

Temperature sensor pins – might be connected with any 

polarity. 

TEC supply input (+) and (-) 

Supply polarity for the TEC. Those pins are floating, 

which means they are not connected to the GND. 

TE cooling 

Detector cooling reduces noise, increases responsivity 

and, in some devices, improves high frequency response. 

Two, three and four stage TE coolers are 

available TE cooler (TEC) is biased with DC power. All 

specifications are given for 300K heat sink temperature. 

The coolers are characterized by: 

Maximum temperature difference ∆T max 

∆T max rated at Q=0, at other Q the ∆T should be 

estimated as ∆T=∆T max(1-Q/Q max) 

Optimum current: I opt 

Supply current giving the highest temperature 

difference (∆T max) at the specified conditions stated in 

detector test data sheet. 

Maximum TEC voltage: V max 

Voltage drop at ∆T max. 

Maximum heat pumping capacity: Q max 

Q max rated at ∆T=0, at other ∆T cooling capacity 

should be estimated as Q=Q max(1-∆T/∆T max) 

Temperature Sensor 

The built-in thermistor serves as a sensor of the detector 

operation temperature. The maximal power dissipated by 

the thermistor should not exceed 0.2 mW and for 

accurate temperature measurement, the power should be 

reduced to

Temperature Sensor 

The built-in thermistor serves as a sensor of the active 

element temperature. The maximal power dissipated by 

the thermistor should not exceed 0.2 mW and for 

accurate temperature measurement, the power should be 

Optical immersion 

Infrared detectors optical immersion to high 

refractive index microlenses is used to improve 

performance of the devices but may limit acceptance 

angle. Action and properties of hemispherical and 

hyperhemispherical lenses are illustrated in the drawings 

and table below. 

Applications 

The typical applications of the VIGO System S.A. 

detectors are given in the table below. Please, provide 

detailed system requirements – we will recommend 

optimum solution. 

Applications 

Spectroscopy 

Gas Analysis 

Laser Metrology 

High Speed Operation 

Analysis of Spatial and Time 

Distribution of Laser Beam 

Remote Temperature 

Measurements 

Heterodyne Detection 

Biomedical applications 

Pyrometers, Scanners 

Thermal Imagers 

Free Space Optical 

Communication 

LIDAR 

Detection and Monitoring of 

Thermal Objects 

Laser-Matter Interaction 

Studies 

Laser Threat Warning 

Fire, Flame and Human Body 

Detection 

Positioning Systems 

Tracking Systems 

Nondestructive Material 

Testing 

Detector Series - examples 

PCI-2TE, PVI-nTE, PVI, PCI 

PCI-2TE, PVI-nTE, PVI, PCI 

PV, PV-2TE, PVM, PVM-2TE, 

PEM, PEMI 

PVI-nTE, PVI, PVM, PVMI, 

PEM, PEMI 

PV, PV-nTE, PVM, PVM-nTE 

PV-nTE, PVI-nTE, PVI-nTE, 

PCI, PCI-nTE 

PV-2TE, PVI-nTE, PCI, 

PCI-nTE 

PV, PVI-nTE, PVM, PVMI, 

PEM, PEMI 


PCI-nTE 


PCI-nTE 

PVI-nTE, PVI 

PVI-nTE, PCI-nTE 

PV-2TE, PVI-nTE PCI, 

PCI-nTE 

PV, PV-2TE, PVM, PVM-2TE, 

PEM, PEMI 

MPC, PCI, PVI, PVMI 


PCI-nTE 

PV, PV-2TE 

PV, PV-2TE, PC, PCI, 

PCI-2TE, PC-2TE 

All Devices 

d – optical (apparent) detector size 

d' – physical detector size 

R – lens radius 

L – lens face to objective focal plane distance 

Immersed device parameters 

Parameter Hemisphere Hyperhemisphere 

Theory GaAs Theory GaAs 

Distance, L R R R(n + 1) 4.3R 

d/d' n 3.3 n 2 10.9 

D* imm/D* nonimm n 3.3 n 2 10.9 

Acceptance angle, Φ 180˚ 180˚ 2 arcsin(1/n) 35 

F/# 0.5 0.5 n/2 1.62 

Where n is a refractive index of a lens material (~3.3 for GaAs used by 

VIGO) 

The values in table 1 show the relative change of a given 

parameter comparing to a non-immersed detector of the 

same optical size. 

Detectors with custom acceptance angles are available 

on request. 

Immersion technology is described in “Infrared Detectors 

and Systems”, E.L. Dereniak and G.D. Boreman, Wiley 

Interscience 2000. 



Preamplifiers for IR photodetectors 

and integrated detection modules 

Preamplifiers are used to amplify weak signals from low 

noise photodetectors and provide optimal conditions for 

detector operation. In addition, preamplifiers protect 

detectors against overbias and make the 

detector/preamplifier system immune to electromagnetic 

interferences. 

We offer a variety of the voltage and current mode 

preamplifiers, AC and DC coupled, with narrow and wide 

bandwidths, standing alone or integrated with detector in 

common packages called detector modules. The current 

mode preamplifiers are preferable in most of applications 

due to inherent linearity and good frequency response. 

Transimpedance preamplifiers . 

The current readout of infrared detectors is typically 

achieved in transimpedance (TI) preamplifiers. Important 

advantage of the TI amp is the ability to maintain the 

detector at constant bias voltage, equal to voltage applied 

to the non-inverting input of the op-amp. 

Simple description of the detector/TI preamplifier system, 

schematically shown in figure below. The detector is 

modeled by a photocurrent source I ph, shunt resistance R d 

and capacitance C d. The photocurrent is proportional to 

the input optical power P and detector current 

responsivity R i 

I ph =R i P (1) 

Transimpedance preamplifier is an operational amplifier 

with feedback resistance R f. Feedback capacitance C f is 

used to set system bandwidth and eliminate gain peaking 

at high frequencies. 

C f 

R f 

e n 

i 

R n 

d 

C d 

V o 

=R i 

R f 

P (5) 

with resulting voltage responsivity R v=R i R f independent 

on frequency, detector resistance and capacitance. 

Unfortunately, the above considerations are limited to 

maximal frequencies dependent on detector capacitance 

and resistance, op-amp gain-bandwidth product and 

other factors. 

Noise 

As follows from the transimpedance circuit (Fig. 1), the 

preamplifier noise current can be approximated as 

2 

= 4k T i 2 n 

e n 

i PA 

2 

(6) 

R f Z d 

where i n and e n is the op-amp open input noise current 

and short input noise voltage, respectively. Z d is the 

detector impedance 

R d 

2 

Z d 

= 

12 f C d R d 2 (7) 

At low frequencies preamplifier noise (frequently called 

„floor noise level”) is not dependent on frequency 

2 

= 4k T + i 2 n 

+ e n 

i PA 

R f 

2 

R d 

2 (8) 

At large frequencies the noise current increases due to 

decreasing detector impedance 

i PA 

=2 f C d 

e n (9) 

Incorrect frequency compensation of transimpedance 

amplifier may cause remarkable increase of the noise 

level near the top cut-off frequency (as shown in figure 

below). 

I ph 

V O 

Input current noise 

Transimpedance circuit for infrared photodetectors 

The output voltage of the transimpedance preamplifier is 

V o =Z f I ph (2) 

The transimpedance gain Z f can be approximated 

by one-pole filter characteristics 

R f 

Z f = 

12 f 2 C 2 f R 2 f 1/2 (3) 

with cutoff frequency 

f ∞ =2f R f C f −1 (4) 

Ouput voltage noise 

It should be noted that the cutoff frequency is typically 

Transimpedance 

greater compared with the voltage preamplifier when 

bandwidths is limited by the detector R dC d time constant. 

For frequencies less than the 3dB cutoff frequency f co, 

Output noise density and frequency response of the 

transimpedance is equal to R f. In consequence, the circuit 

transimpedance amplifier. 

converts linearly optical input power P into output voltage 



How preamplifier affects system performance 

Total input current noise of a detection module is 

i 2 n =i 2 2 

PA i d (10) 

This results in degradation of the overall detectivity of the 

detector/preamplifier system by i n/i d factor. 

The degradation may be significant for low impedance 

detectors- having low resistance

Custom Engineering/Design 

On the following pages of this catalog you will find 

detailed specifications of devices that are currently 

offered by VIGO System. However, our engineering team 

- including engineers experienced in optoelectronic, 

mechanical engineering and electronics is ready to help 

solve the most sophisticated and complex problems 

related to infrared radiation detection & measurements. 

The technology developed at VIGO System is very 

flexible, permitting construction of devices for specific 

applications – infrared detectors with various optical 

areas and formats, spectral and frequency response, 

operation temperature, field of view, packages, 

connectors etc. Custom detector formats available 

at present are single element detectors, linear and 

bilinear arrays, small 2-D arrays (eg. quadrants). 

Infrared detector modules and systems 

In addition to various types of infrared detectors we offer 

a line of standard and custom infrared detector modules, 

preamplifiers, detector bias circuits, thermoelectric cooler 

controllers, heat sinks and other accessories. 

Over 25 years of experience in infrared technology has 

given us opportunity to provide extensive custom 

engineering capabilities. Our products and services are 

supported by an experienced team of engineers who can 

provide competent advice on a 

applications. 

wide range of 

IR single element, quadrant and linear array detectors - 

in standard and custom packages. 



Packages 

Packages, Windows and Pin Layout 

Devices are delivered in several packages: TO-8, BNCbased, 

TO-39, PEM with SMA connectors and quadrant 

with SMA connectors. 

The BNC and the TO-39 packages are used for uncooled 

PV and PC devices. The TO-8 package is used for TE 

cooled devices. All TE-cooled detectors are provided with 

a window. We offer windows optimized for different 

spectral bands: BaF 2, ZnSe, CdTe, CaF 2, sapphire, Si 

and Ge. Windows can be anti-reflection coated upon 

request. 

PEM Packages 

Dimensions in millimeters. 

TO39 Packages 

Windowless TO39-based packages are typically used for 

uncooled detectors MPC, PC, PCI, PV, PVI and PVMI 

devices. 


The photoelectromagnetic detectors (PEMI-L, PEM-L) 

are mounted in the specialized packages with SMA 

connectors, designed for broadband applications. A 

magnetic circuit is incorporated into the package. BaF 2 

window is supplied as a standard. Dimensions in 

millimeters. 

Detector optical 

area [mm 2 ] 

Signal 1(+), 2(-), 3(GND) 

Hyperhemisphere Hemisphere Flat 

0.5×0.5 1×1 2×2 3×3 

0.5×0.5 – 

3×3 

0.01×0.0 

1 – 4×4 

R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 ∞ 

A [mm] 1.5±0.2 2.4±0.2 3.75±0.2 4.8±0.2 0 0 

B [mm] 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 

FOV ~36º ~36º ~36º ~36º ~90º ~90º 



Packages with BNC Connectors 

The specialized BNC-based packages are used for 

uncooled room temperature devices (MPC, PC, PCI, PV, 

PVI, PVM, PVMI). Standard devices are delivered without 

a window. 


Quadrant Packages 

Devices are mounted in specially designed packages, 

supplied with the SMA connectors, suitable for fast 

applications. These packages are used for PCQ, PVQ 

and PVMQ devices. Standard devices are delivered 

without a window. 


Optical 

area 


0.5×0.5 1×1 2×2 3×3 

0.5×0.5 – 

3×3 

0.01×0.01 – 

4×4 

R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 ∞ 

A [mm] 4.6±0.3 5.5±0.3 6.85±0.3 7.9±0.3 3.1±0.3 1.6±0.3 

B [mm] 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 1.6±0 .15 

FOV, 

C=Ø4 

FOV, 

C=Ø6 

~36° ~36° ~36° ~36° 66° 102° 

~36° ~36° ~36° ~36° 88° 124° 



TO8 Packages 

The TO8-based packages are used for thermoelectrically 

cooled devices (PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, 

PVM-nTE and PVMI-nTE). The packages are filled with 

dry, heavy noble gases for low thermal conductivity 

(Kr/Xe mixtures). Water vapor condensation is prevented 

by careful sealing and water absorbers applied inside the 

package. BaF 2 windows are used as a standard, other 

windows possible on request. 

Dimensions in millimeters 

bottom view – pin layout 

Note: 2-56UNC-2A thread: 56 threads/inch, major dia.: 0.086”, 

minor dia.: 0.0648”, pitch dia.: 0.0744” 

2TE 



0.5×0.5 – 0.01×0.01 – 

0.5×0.5 1×1 2×2 

area [mm 2 ] 

3×3 4×4 

R [mm] 0.5 0.8 1.25 0.5-1.6 ∞ 

A [mm] 4.1±0.3 3.2±0.3 1.85±0.3 5.6±0.3 5.6±0.3 

B [mm] 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 

C [mm] 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3 

FOV ~36° ~36° ~36° ~70º ~70º 

9 10 11 12 1 

8 

7 

6 

photocurrent 

5 

Signal 

Thermistor 

TE Cooler Supply 

Chassis Ground 

not used 

4 

2 

3 

1 and 3 

7 and 9 

2(+) and 8(-) 

11 

4, 5, 6, 10, 12 

3TE 



0.5×0.5 – 0.01×0.01 – 

0.5×0.5 1×1 2×2 

area [mm 2 ] 

3×3 4×4 

R [mm] 0.5 0.8 1.25 0.5-1.6 ∞ 

A [mm] 5.7±0.35 4.8±0.35 3.45±0.35 7.2±0.35 7.2±0.35 

B [mm] 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 

C [mm] 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 

FOV ~36º ~36º ~36º ~70º ~70º 

4TE 



0.5×0.5 – 0.01×0.01 – 

0.5×0.5 1×1 2×2 

area [mm 2 ] 

3×3 4×4 

R [mm] 0.5 0.8 1.25 0.5-1.6 ∞ 

A [mm] 7.3±0.4 6.4±0.4 5±0.4 8.8±0.4 8.8±0.4 

B [mm] 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 

C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3 

FOV ~36° ~36° ~36° ~70º ~70º 



Precautions for Use 

For repeated irradiation with pulses shorter than 

1 µs, the equivalent CW irradiation, average 

Operating temperature 

power over the pulse - to - pulse period should be 

A detector should be operated at its optimal temperature less than the CW damage threshold according to 

given in the test report. 

equation: equivalent CW radiation power = [(pulse 

peak power)/(focus area)]*[(pulse 

Maximum voltage 

duration)*(repetition rate)]. 

Do not operate the photovoltaic detector at higher bias Saturation thresholds vary by detector type and 

voltages than suggested in the test report. 

can be provided upon request. 

Be careful using ohmmeters for photovoltaic Shaping Leads 

detectors! 

Avoid bending the leads at a distance less than 2 mm 

Standard ohmmeters may overbias and damage the from a base of the package to prevent glass seal 

detector. This is especially true for small or SWIR damage. When shaping the leads, maximum two right 

photovoltaic detectors. Bias of 10 mV can be used for angle bends and three twists at the distance minimum 6 

resistance measurements of any type of detector. Ask for mm from the base of the package. Keep the leads of the 

conditions of I-V plot measurements! 

detecting element shorted when shaping! 

Usage 

Soldering Leads 

Devices can operate in the 10-80% humidity, in the IR detectors can be easily damaged by excessive heat. 

-20ºC to +30ºC ambient temperature range. Operation at Special care should be taken when soldering the leads. 

>30ºC ambient may reduce performance for standard Usage of heat sinks is highly recommended. Tweezers 

Peltier controllers. Ask for systems that can operate at can be used for this purpose; when soldering, clamp a 

30-80ºC ambient. 

lead at a place between the soldering iron and the base 

of the package. To avoid destructive influence of ESD 

Storage 

and other accidental voltages (e.g. from a non-grounded 

The following conditions should be fulfilled for safe soldering iron) rules for handling LSI integrated circuits 

and reliable operation of detector: 

should be applied to IR detectors too. Leads should be 

store in dark place, 10% to 90% humidity and soldered at 370°C or below within 5 seconds. 

-20ºC to +50ºC temperatures 

avoid exposing to the direct sunlight and strong 

Cleaning Window 

UV/VIS light as this may result in degradation of a 

Keep the window clean. Use a soft cotton cloth damped 

detector performance 

with isopropyl alcohol and wipe off the surface gently if 

necessary. 

avoid electrostatic discharges at leads therefore, 

the devices should be stored having leads 

Mechanical Shocks 

shorted. 

The Peltier elements may be damaged by excessive 

mechanical shock or vibration. Care is recommended 

Handling 

during manipulations and normal use. Drop impacts 

Some IR window materials such as BaF 2 are soft. 

against a hard surface are particularly dangerous. 

Particular attention should be paid to not scratch a 

surface of the window. A damaged window may entirely 

degrade the detector performance. Excessive mechanical 

stress applied to the package itself or to a device 

containing the package may result in permanent damage. 

Peltier element inside thermoelectrically cooled detectors 

is susceptible to mechanical shocks. Great care should 

be taken when handling cooled detectors. 

Beam Power Limitations 

Damage thresholds, specified as integrated power of 

incoming radiation: 

For devices without immersion lens irradiated with 

continuous wave (CW) or single pulse longer then 

1 µs irradiance on the active area must not exceed 

100 W/cm 2 .The irradiance of a pulse shorter than 

1 µs must not exceed 1 MW/cm 2 

For optically immersed devices irradiated with CW 

or single pulse longer then 1 µs irradiance on the 

apparent optical active area must not exceed 

2.5 W/cm 2. The irradiance of the pulse shorter than 

1 µs must not exceed 10 kW/cm 2 



Order code 

Type Immersion - Cooling - λ opt - Length x Width - Pack Type - Window - FOV 

Type Immersion - Cooling - λ opt - Φ Diameter - Pack Type - Window - FOV 

1) PVI-2TE-5-0.1x0.1-TO8-BaF2-35 

PV I - 2TE - 5 - 0.1 x 0.1 - TO8 - BaF2 - 35 

2) PEM-10.6-1x1-PEM-NO WINDOW 

PEM - - 10.6 - 1 x 1 - PEM - BaF2 - 

3) PC-10.6-1x1-BNC-NO WINDOW 

PC - - 10.6 - 1 x 1 - BNC - NO WINDOW - 

4) PVI-2TE-6-ø0.05-TO8-ARGe-60 

PV I - 2TE - 6 - Φ 0.05 - TO8 - ARGe - 60 

Types: 

PC – Photoconductors 

PV – Single Junction Photovoltaic Devices 

PVM – LWIR Multiple Junction Photovoltaic Devices optimized for large area 

PEM – Photoelectromagnetic Devices 

PCQ – Quadrant Photoconductors 

Immersion: 

All devices can be monolithically integrated to the optical immersion lens. Add letter 'I' to the end of type symbol for 

immersed detectors. Hiperhemispherical immersion is offered as a standard 

Cooling Type (Cooling) 

Our PC, PV and PVM detectors are available as uncooled devices or equipped with multiple stage TE cooling. Add '- 

2TE', '-3TE' or '-4TE' for two, three or four stage TE cooled devices. 

Wavelength Range and Optimum Wavelength (λ opt): 

Our standard devices are optimized for specific wavelength see table below. Other wavelength are available as an 

option. 

Type 

Optimum Wavelength 

PC, PCI 4 5 6 9 10.6 

PC-2TE, PCI-2TE 4 5 6 9 10.6 12 13 

PV, PVI 3 3.4 4 5 6 8 

PV-nTE, PVI-nTE 3 3.4 4 5 6 8 10.6 

PCI-3TE 9 10.6 12 13 

PVM, PVMI, PVM-nTE, PVMI-nTE 8 10.6 

PEM, PEMI, PCQ 10.6 

Optical Area availability table 

Typical devices are square-shaped. Single junction photovoltaic devices are also available as a circular. 

Specify side length and diameter for square and circular areas, respectively. 

Type 

Length or diameter [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PV-3 O X X O O O 

PV-2TE-3 O X X O O O 



PVI-3 O X X O 

PVI-2TE-3 O X X O 



PV-3.4 O X X O O O 

PV-2TE-3.4 O X X O O O 



PVI-3.4 O X X O 

PVI-2TE-3.4 O X X O 




Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 


PC-4 X X X X X X X X X X 

PC-2TE-4 X X X X X X X X 

PCI-4 X X X X 

PCI-2TE-4 X X X X 





PVI-4 O X X O 






PCI-5 X X X X 






PVI-5 O X X O 







PCI-6 X X X X 






PVI-6 O X X O 




PV-8 X X* P 

PV-2TE-8 X X* P 



PVI-8 X X X* P 

PVI-2TE-8 X X X* P 



PVM-8 O O X X O O X X X X 

PVM-2TE-8 O O X X O O X X X 

PVMI-8 O O X X 

PVMI-2TE-8 O O X X 




PCI-9 X X X X 



PC-10.6 (R005) X X X X X X X X X X 

PC-2TE-10.6 X X X X X X X X 

PC-3TE-10.6 X X X X X X X X 

PCI-10.6 X X X X 

PCI-2TE-10.6 X X X X 

PCI-3TE-10.6 X X X X 

PV-2TE-10.6 X X* P 

PV-3TE-10.6 X X* P 

PV-4TE-10.6 X X* P 

PVI-2TE-10.6 X X X* P 



PVM-10.6 O O X X O O X X X X 

PVM-2TE-10.6 O O X X O O X X X 

PVMI-10.6 O O X X 

PVMI-2TE-10.6 O O X X 


PEM-10.6 O O O O X X 

PEMI-10.6 O O X X 

PCQ-10.6 X X X X X X X X X 









*) Devices may require reverse bias in order to increase dynamic resistance and improve frequency response. 

X – standard detector operating without bias 

P – default - operating with reverse bias 

O – detectors available on request, parameters may vary from these in data sheets. 



Package Type (Pack_Type): Devices are typically offered in 5 different packages: 

Type 

Pack_Type 

PC,PCI, PV, PVI, PVM, PVMI 

PC-2TE,PCI-2TE, PV-2TE, PVI-2TE, PVM-2TE, PVMI-2TE, PCI-3TE, PVI-3TE, PVI-4TE 

PEM, PEMI 

PCQ 

BNC, TO39 

Window Type (Window): Cooled devices are typically offered with wedged BaF 2 window. When no window is 

needed, "NO WINDOW" attribute must be added. Windows are available as following options: 

Window Symbol Window Symbol 

BaF 2 Wedged BaF2 Wedged sapphire Al2O3 

BaF2P Planar BaF2P Planar AR-coated Si ARSi 

BaF 2 BaF2 AR-coated Ge ARGe 

ZnSe 

CdTe 

CaF 2 

ZnSe 

CdTe 

CaF2 

FOV - Field of View: Angular field of view of detector in degrees. Depends on type of immersion lens applied 

and package used for the detector. 

TO8 

PEM 

PCQ 



Data sheets of IR Detectors 

IR detectors data sheets 



PC SERIES 

2-11 µm IR PHOTOCONDUCTORS 

FEATURES 

- Ambient temperature operation 

- Wide dynamic range 

- Perfect match to fast electronics 

- Convenient to use 

- Low cost 

- Prompt delivery 

- Custom design upon request 

SPECIFICATION 

DESCRIPTION 

The PC-λ opt (λ opt - optimal wavelength in micrometers) 

feature IR photoconductive detector. 

This series is easy to use, no cooling or heatsink needed. 

The devices are optimized for the maximum performance 

at λ opt. Cut-on wavelength is limited by GaAs transittance 

(~0.9 µm). Bias is needed to operate photocurrent. 

Performance at low frequencies (100 >40 >6 >0.4 >0.1 

Time Constant ns

PC-2TE SERIES 


THERMOELECTRICALLY COOLED 

FEATURES 

- High performance in the 2 to 13 µm range 

- Fast response 



- Compact, rugged and reliable 

- Low cost 



DESCRIPTION 

PC-2TE-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature IR photoconductive 

detector on two-stage thermoelectrical cooler. The devices 

are optimized for the maximum performance at λ opt. 

Cut-on wavelength is limited by GaAs transittance 


Performance at low frequencies (1000 >500 >70 >5 >1.5 >0.5 >0.25 

Time Constant ns

PC-3TE SERIES 



FEATURES 

- High performance in the 2-14 µm range 





- Low cost 



DESCRIPTION 

PC-3TE-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature IR photoconductive 

detector on three-stage thermoelectrical cooler. The 

devices are optimized for the maximum performance at λ opt. 

Cut-on wavelength is limited by GaAs transittance 


Performance at low frequencies (

PCI SERIES 


OPTICALLY IMMERSED 

FEATURES 


- Time constant of 1 ns or less 




- Low cost 



SPECIFICATION 

DESCRIPTION 

PCI-λ opt photodetectors series (λ opt - optimal wavelength in 

micrometers) feature IR photoconductive detector, 

optically immersed to high refractive index GaAs 

hyperhemispherical (standard) or hemispherical or any 

intermediate lens (as option) for different acceptance 

angle and saturation level. This series is easy to use, no 

cooling or heatsink needed. The devices are optimized for 

the maximum performance at λ opt. Cut-on wavelength is 

limited by GaAs transittance (~0.9 µm). Bias is needed to 

operate photocurrent. Performance at low frequencies 

(600 >300 >60 >3 >1 

1x1 mm 

Time Constant ns

PCI-2TE SERIES 




FEATURES 

- High performance in the 2 to 14 µm range 





- Low cost 



DESCRIPTION 

PCI-2TE-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature two-stage 

thermoelectrical cooler IR photoconductive detector, 



intermediate lens (as option) for different acceptance angle 

and saturation level. The devices are optimized for the 

maximum performance at λ opt. Cut-on wavelength is limited 

by GaAs transittance (~0.9 µm). Bias is needed to operate 

photocurrent. Performance at low frequencies (6000 >3000 >600 >40 >15 >5 >2.5 

Time Constant ns

PCI-3TE SERIES 2-14 µm IR PHOTOCONDUCTORS 



FEATURES 






- Low cost 



DESCRIPTION 

PCI-3TE-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature three-stage 

thermoelectrical cooler IR photoconductive detector, 




and saturation level. The devices are optimized for the 

maximum performance at λ opt. Cut-on wavelength is limited 

by GaAs transittance (~0.9 µm). Bias is needed to operate 

photocurrent. Performance at low frequencies (

PCQ SERIES 


QUADRANT GEOMETRY 

FEATURES 


- D*(10.6 µm) ≥9·10 6 cmHz 1/2 /W 





- Low cost 



DESCRIPTION 

The PCQ-λ opt (λ opt - optimal wavelength in micrometers) 

series detectors are quadrant, high speed, ambient 

temperature IR photoconductive detectors. The devices are 

optimized for the maximum performance at λ opt. Cut-on 

wavelength is limited by GaAs transittance (~0.9 µm). Bias 

is needed to operate photocurrent. Performance at low 

frequencies (0.1 

Time Constant ns

PEM SERIES 

10.6 µm PHOTOELECTROMAGNETIC DETECTORS 

FEATURES 


- No bias required 

- 2 to 11 µm spectral range 


- No flicker noise 

- Operation from DC to HF 

- Lightweight, rugged and reliable 


- Low cost 


- DEPRECATED 

DESCRIPTION 

The PEM series detectors operate on the 

photoelectromagnetic effect in the semiconductors. The 

devices are typically optimized for the best performance at 

10.6 µm. The PEMI devices optically immersed to high 

refractive index hyperhemispherical (standard) or 

hemispherical (option) lenses. The detector includes active 

element based on (Hg,Cd)Te band gap engineered with 

selected composition and doping profiles, and miniature 

permanent magnets to produce a magnetic field. 

The PEM detectors are well suited for heterodyne detection 

of 10.6 µm radiation. Exhibiting no flicker noise, they can 

be at the same time used for detection of CW and low 

frequency modulated radiation in the whole 2 to 11 µm 

spectral range. Custom detectors such as single elements 

of various sizes, quadrant cells and multielement arrays, 

various specialized packages and connectors are available 

upon request. 

SPECIFICATION @20ºC 

CHARACTERISTICS UNITS PEM-10.6 PEMI-10.6 

λ opt µm 10.6 10.6 

Detectivity 1) : 

@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥3×10 7 

≥1×10 7 ≥1x10 8 

≥5x10 7 

Responsivity @ λ opt Vmm/W ≥0.1 ≥0.4 

Time Constant ns ≤1 ≤1 

Resistance Ω 40 to 100 40 to 100 

Operating temperature K ~300 

Acceptance angle, F/# deg, - 48, 1.23 36, 1.62 

1) 

Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. 

Type 

Length [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PEM-10.6 O O O O X X 

PEMI-10.6 O O X X 

X – standard detectors 

O – detectors available on request, parameters may vary from these in data sheets. 



PV SERIES 

3-8 µm IR PHOTOVOLTAIC DETECTORS 

FEATURES 



- Short time constant 


- Operation from DC to VHF 



- Low cost 


DESCRIPTION 

PV-λ opt photodetectors series (λ opt - optimal wavelength in 

micrometers) feature IR photovoltaic detector. This series is 

easy to use, no cooling or heatsink needed. The devices 

are optimized for the maximum performance at λ opt. Cut-on 

wavelength can be optimized upon request. Reverse bias 

may significantly increase speed of response and dynamic 

range. It results also in improved performance at high 

frequencies, but 1/f noise that appears in biased devices 

may reduce performance at low frequencies. 

Highest performance and stability are achieved by 

application of variable gap (HgCd)Te semiconductor, 

optimized doping and sophisticated surface processing. 

Standard detectors are available without window in TO-39 

or BNC based package. Various windows, other packages 

and connectors are available upon request. 


CHARACTERISTICS UNITS PV-3 PV-3.4 PV-4 PV-5 PV-6 PV-8 

λ opt µm 3 3.4 4 5 6 8 


@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥8×10 9 

≥6.5×10 9 ≥7×10 9 

≥5×10 9 ≥5×10 9 

≥3×10 9 ≥2×10 9 

≥1×10 9 ≥1×10 9 

≥5×10 8 ≥8×10 7 

≥4×10 7 

Responsivity @ λ opt A/W ≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3 

Time Constant 2) ns ≤20 ≤20 ≤20 ≤20 ≤15 ≤8 

Resistance-optical area product Ω×cm 2 ≥1 ≥0.5 ≥0.1 ≥0.01 ≥0.002 ≥0.0001 


Acceptance angle, F/# deg, - >90, 0.71 

1) 


2) 

Faster response may be achieved at reverse bias and with high-frequency-optimized custom detectors. 

Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 


PV-3.4 O X X O O O 



PV-6 O X X 1) O O 

PV-8 X X 1) P 

1) 

Custom detector may require reverse bias in order to increase dynamic resistance and improve frequency response. 

X – standard detector 

P – default with reverse bias 

O – detectors available on request, parameters may vary from these in data sheets 



PV-2TE SERIES 



FEATURES 

DESCRIPTION 

- High performance in the 2-12 µm wavelength range PV-2TE-λ opt photodetectors series (λ opt - optimal wavelength 


in micrometers) feature IR photovoltaic detector on twostage 

thermoelectrical cooler. The devices are optimized for 



the maximum performance at λ opt. Cut-on wavelength can 


be optimized upon request. Reverse bias may significantly 


increase speed of response and dynamic range. It results 

- Low cost 

also in improved performance at high frequencies, but 1/f 


noise that appears in biased devices may reduce 


performance at low frequencies. 




Custom devices with quadrant cells, multielement arrays, 

different windows, lenses and optical filters are available 

upon request. 

Standard detectors are available in TO-8 packages with 

BaF 2 windows. Other packages, windows and connectors 

are also available. 


CHARACTERISTICS UNITS PV-2TE-3 PV-2TE-3.4 PV-2TE-4 PV-2TE-5 PV-2TE-6 PV-2TE-8 PV-2TE-10.6 

λ opt µm 3 3.4 4 5 6 8 10.6 


@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥1×10 11 

≥7×10 10 ≥6×10 10 

≥4×10 10 ≥4×10 10 

≥3×10 10 ≥1.5×10 10 

≥9×10 9 ≥5×10 9 

≥2×10 9 ≥4×10 8 

≥2×10 8 ≥2×10 8 

≥1×10 8 

Responsivity @ λ opt A/W ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4 

Time Constant 2) ns ≤20 ≤20 ≤20 ≤20 ≤15 ≤8 ≤6 

Resistance-optical area product Ω×cm 2 ≥150 ≥3 ≥2 ≥0.1 ≥0.02 ≥0.0002 ≥0.0001 


Acceptance angle, F/# deg, - 70, 0.87 

1) 

Data sheet states minimum guaranteed D* values for each detector model. Higher performance can be provided upon request. 

2) 

Faster response may be achieved with high-frequency-optimized devices. 

Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PV-2TE-3 O X X O O O O 

PV-2TE-3.4 O X X O O O O 

PV-2TE-4 O X X O O O O 



PV-2TE-8 X X 1) P 

PV-2TE-10.6 X X 1) P 

1) Custom detector may require reverse bias in order to increase dynamic resistance and improve frequency response. 






PV-3TE SERIES 



FEATURES 

- High performance in the 2-12 µm wavelength range 






- Low cost 


DESCRIPTION 

PV-3TE-λ opt photodetectors series (λ opt - optimal wavelength 

in micrometers) feature IR photovoltaic detector on threestage 

thermoelectrical cooler. The devices are optimized for 

the maximum performance at λ opt. Cut-on wavelength can be 

optimized upon request. Reverse bias may significantly 










upon request. 






λ opt µm 3 3.4 4 5 6 8 10.6 


cmHz 

@ λ / 

peak 

W ≥3×10 11 ≥9×10 10 ≥6×10 10 ≥4×10 10 ≥7×10 9 ≥5×10 8 ≥3×10 8 

@ λ opt ≥1×10 11 ≥7×10 10 ≥4×10 10 ≥1×10 10 ≥4×10 9 ≥3×10 8 ≥1.5×10 8 

Responsivity @ λ opt A/W ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7 

Time constant ns ≤120 ≤20 ≤20 ≤20 ≤15 ≤8 ≤6 

Resistance-optical area 

product 

Ω×cm 2 ≥240 ≥15 ≥6 ≥0.3 ≥0.025 ≥0.0004 ≥0.0002 



1) 


2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 






PV-3TE-8 X X 1) P 

PV-3TE-10.6 X X 1) P 

1) 




O – detectors available on request, parameters may differ from these in data sheets 



PV-4TE SERIES 



FEATURES 






- Low cost 



DESCRIPTION 

PV-4TE-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature IR photovoltaic 

detector on four-stage thermoelectrical cooler. The 

devices are optimized for the maximum performance at 

λ opt. Cut-on wavelength can be optimized upon request. 

Reverse bias may significantly increase speed of 

response and dynamic range. It results also in improved 

performance at high frequencies, but 1/f noise that 

appears in biased devices may reduce performance at 

low frequencies. 






upon request. 






λ opt µm 3 3.4 4 5 6 8 10,6 


cmHz 

@ λ / 

peak 

W 

≥3×10 11 ≥2×10 11 ≥1×10 11 ≥4×10 10 ≥9×10 9 ≥5×10 8 ≥4×10 8 

@ λ opt ≥1.5×10 11 ≥1×10 11 ≥6×10 10 ≥1.5×10 10 ≥5×10 9 ≥4×10 8 ≥2×10 8 



Resistance-optical area 

product 

Ω×cm 2 ≥300 ≥20 ≥8 ≥0.4 ≥0.03 ≥0.0006 ≥0.0005 



1) 


2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 






PV-4TE-8 X X 1) P 

PV-4TE-10.6 X X 1) P 

1*) 







PVI SERIES 



FEATURES 








- Low cost 


DESCRIPTION 

PVI-λ opt photodetectors series (λ opt - optimal wavelength in 

micrometers) feature IR photovoltaic detector, optically 

immersed to high refractive index GaAs 



and saturation level. This series is easy to use, no cooling 

or heatsink needed. The devices are optimized for the 

maximum performance at λ opt. Cut-on wavelength can be 









Standard detectors are available without window in TO-39 

or BNC based package. Various windows, other packages 

and connectors are available upon request. 


CHARACTERISTICS UNITS PVI-3 PVI-3.4 PVI-4 PVI-5 PVI-6 PVI-8 

λ opt µm 3 3.4 4 5 6 8 


@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥5×10 10 

≥5×10 10 ≥5×10 10 

≥4.5×10 10 ≥3×10 10 

≥2×10 10 ≥1.5×10 10 

≥9×10 9 ≥8×10 9 

≥4×10 9 ≥8×10 8 

≥4×10 8 

Responsivity @ λ opt A/W ≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3 

Time constant 2) ns ≤20 ≤20 ≤20 ≤20 ≤15 ≤8 

Resistance-optical area product Ω×cm 2 ≥100 ≥50 ≥6 ≥1 ≥0.2 ≥0.01 



1) 


2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PVI-3 O X X O 

PVI-3.4 O X X O 

PVI-4 O X X O 

PVI-5 O X X O 

PVI-6 O X X O 

PVI-8 X X X 1) P 

1) 




O – detectors available on request, parameters may different from these in data sheets 



PVI-2TE SERIES 




FEATURES 







- Low cost 



DESCRIPTION 

PVI-2TE-λ opt photodetectors series (λ opt - optimal wavelength 

in micrometers) feature two-stage thermoelectrical cooler IR 

photovoltaic detector, optically immersed to high refractive 

index GaAs hyperhemispherical (standard) or hemispherical 

or any intermediate lens (as option) for different acceptance 

angle and saturation level. The devices are optimized for the 







Highest performance and stability are achieved by application 

of variable gap (HgCd)Te semiconductor, optimized doping 

and sophisticated surface processing. Custom devices with 

quadrant cells, multielement arrays, different windows, lenses 

and optical filters are available upon request. 

Standard detectors are available in TO-8 packages with BaF 2 

windows. Other packages, windows and connectors are also 

available. 


CHARACTERISTICS UNITS PVI-2TE-3 PVI-2TE-3.4 PVI-2TE-4 PVI-2TE-5 PVI-2TE-6 PVI-2TE-8 PVI-2TE-10.6 

λ opt µm 3 3.4 4 5 6 8 10.6 


@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥8×10 11 

≥5.5×10 11 ≥6×10 11 

≥3×10 11 ≥3×10 11 

≥2×10 11 ≥1×10 11 

≥6×10 10 ≥5×10 10 

≥2×10 10 ≥4×10 9 

≥2×10 9 ≥2×10 9 

≥1×10 9 


Time Constant 2) ns ≤20 ≤20 ≤20 ≤20 ≤15 ≤8 ≤6 

Resistance-optical 

area product 

Ω×cm 2 ≥15000 ≥300 ≥200 ≥10 ≥2 ≥0.02 ≥0.01 



1) 

Data sheet states minimum guaranteed D* values for each detector model. Higher performance can be provided upon request. 

2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 






PVI-2TE-8 X X X 1) P 

PVI-2TE-10.6 X X X 1) P 

1) 











FEATURES 







- Low cost 



DESCRIPTION 


in micrometers) feature three-stage thermoelectrical cooler 

IR photovoltaic detector, optically immersed to high 

refractive index GaAs hyperhemispherical (standard) or 

hemispherical or any intermediate lens (as option) for 

different acceptance angle and saturation level. The devices 

are optimized for the maximum performance at λ opt. Cut-on 

wavelength can be optimized upon request. Reverse bias 

may significantly increase speed of response and dynamic 

range. It results also in improved performance at high 

frequencies, but 1/f noise that appears in biased devices 

may reduce performance at low frequencies. 






upon request. 


BaF2 windows. Other packages, windows and connectors 




λ opt µm 3 3.4 4 5 6 8 10.6 


@ λ peak 

@ λ opt 

cmHz 1/2 /W ≥9×10 11 

≥7×10 11 ≥7×10 11 

≥5×10 11 ≥5×10 11 

≥3×10 11 ≥1×10 11 

≥8×10 10 ≥6×10 10 

≥3×10 10 ≥5×10 9 

≥3×10 9 ≥3×10 9 

≥1.5×10 9 

Responsivity @ λ opt A/W ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7 


Resistance-optical area product Ω×cm 2 ≥24000 ≥1500 ≥600 ≥30 ≥2.5 ≥0.04 ≥0.02 



1) 


2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 







PVI-3TE-10.6 X X X 1) P 











FEATURES 







- Low cost 



DESCRIPTION 


in micrometers) feature four-stage thermoelectrical cooler IR 

photovoltaic detector, optically immersed to high refractive 

index GaAs hyperhemispherical (standard) or hemispherical 

or any intermediate lens (as option) for different acceptance 

angle and saturation level. The devices are optimized for the 












upon request. 


BaF2 windows. Other packages, windows and connectors 




λ opt µm 3 3.4 4 5 6 8 10.6 


@λ peak 

@λ opt ≥8×10 11 ≥7×10 11 ≥4×10 11 ≥1×10 11 ≥4×10 10 ≥4×10 9 ≥2×10 9 

cmHz 1/2 /W ≥1×10 12 ≥8×10 11 ≥6×10 11 ≥3×10 11 ≥6×10 10 ≥5×10 9 ≥4×10 9 



Resistance-optical area product Ω×cm 2 ≥30000 ≥2000 ≥800 ≥40 ≥3 ≥0.06 ≥0.05 



1) 


2) 


Type 


0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 







PVI-4TE-10.6 X X X 1) P 







PVM SERIES 

8-11 µm IR PHOTOVOLTAIC 

MULTIPLE JUNCTION DETECTORS 

FEATURES 








- Large area devices 

- Low cost 



DESCRIPTION 

The PVM-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature IR multiple 

heterojunction photovoltaic detector. The devices are 

optimized for the maximum performance at λ opt. Highest 

performance and stability are achieved by application of 

variable gap (HgCd)Te semiconductor, optimized doping 

and sophisticated surface processing. Standard detectors 

are available without window in TO-39 or BNC based 

package. Various windows, other packages and connectors 

are available upon request. 


CHARACTERISTICS UNITS PVM-8 PVM-10.6 

λ opt µm 8 10.6 


@λ peak 

@ λ opt ≥6×10 7 ≥1×10 7 

cmHz 1/2 /W ≥1.2×10 8 

≥2×10 7 

Responsivity - Width Product @ λ opt A×mm/W ≥0.008 ≥0.002 

Time constant ns ≤4 ≤1.5 



Acceptance angle, F/# deg, - >90, 0.71 

1) 


Type 

Length [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PVM-8 O O X X O O X X X X 

PVM-10.6 O O X X O O X X X X 





PVM-2TE SERIES 

8-11 µm IR PHOTOVOLTAIC MULTIPLE 

JUNCTION DETECTORS 


FEATURES 







- Low cost 



DESCRIPTION 

The PVM-2TE-λ opt photodetectors series (λ opt - optimal 


detector on two-stage thermoelectrical cooler. The devices 

are optimized for the maximum performance at λ opt, large 

area devices. 






upon request. 





CHARACTERISTICS UNITS PVM-2TE-8 PVM-2TE-10.6 

λ opt µm 8 10.6 


@λ peak 

cmHz 1/2 /W ≥6×10 8 

≥2×10 8 

@ λ opt ≥3×10 8 ≥1×10 8 

Responsivity - Width Product @ λ opt 

A×mm/W ≥0.015 ≥0.006 

Time constant ns ≤4 ≤3 




1) 


Type 

Length [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PVM-2TE-8 O O X X O O X X X 

PVM-2TE-10.6 O O X X O O X X X 





PVMI SERIES 




FEATURES 








- Large area devices 

- Low cost 


DESCRIPTION 

The PVMI-λ opt photodetectors series (λ opt - optimal 

wavelength in micrometers) feature IR multiple 

heterojunction immersed photovoltaic detector. The devices 

are optimized for the maximum performance at λ opt. Highest 

performance and stability are achieved by application of 

variable gap (HgCd)Te semiconductor, optimized doping 

and sophisticated surface processing. Standard detectors 

are available without window in TO-39 or BNC based 

package. Various windows, other packages and connectors 

are available upon request. 


CHARACTERISTICS UNITS PVMI-8 PVMI-10.6 

λ opt µm 8 10.6 


@λ peak 

@λ opt 

cmHz 1/2 /W ≥6×10 8 

≥3×10 8 ≥2×10 8 

≥1×10 8 

Responsivity - Width Product @ λ opt A×mm/W ≥0.04 ≥0.01 

Time constant ns ≤4 ≤1.5 




1) 


Type 

Length [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 

PVMI-8 O O X X 

PVMI-10.6 O O X X 





PVMI-nTE SERIES 





FEATURES 

- High performance in the long wavelength 

range without LN-cooling 






- Low cost 



DESCRIPTION 

The PVMI-nTE-λ opt photodetectors series (λ opt - optimal 


immersed detector on n-stage thermoelectrical cooler. The 

devices are optimized for the maximum performance at λ opt, 

large area devices. 






upon request. 





CHARACTERISTICS UNITS PVMI-2TE-8 PVMI-2TE-10.6 PVMI-3TE-8 PVMI-3TE-10.6 

λ opt µm 8 10.6 8 10.6 

Detectivity 1) 

@λ peak 

@λ opt 

cmHz 1/2 /W 

≥3×10 9 

≥2×10 9 

≥6×10 9 

≥2×10 9 

≥2×10 9 ≥1×10 9 ≥3×10 9 ≥1.5×10 9 

Responsivity - Width 

Product @ λ opt 

A×mm/W ≥0.1 ≥0.05 ≥0.2 ≥0.1 

Time constant ns ≤4 ≤3 ≤4 ≤3 

Resistance Ω 150 to 600 100 to 350 200 to 1200 200 to 1200 

Operating temperature K ~230 ~230 ~210 ~210 

Acceptance angle, F/# deg, - 36, 1.62 36, 1.62 36, 1.62 36, 1.62 

1) 


Type 

Length [mm] 

0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4 







a sheets of electronics 



Related electronic accesories 



Model MIPXC-xx MIPxCv2-F-xx VPAC-1000F SIPXC-xx VPXC-xxS 

Page 42 45 52 49 55 

Application OEM Bench-Top Bench-Top OEM For uncooled 

detectors 

Max bandwidth [MHz] 250 250 1000 250 20 

Type 

IR DETECTION MODULE WITH TRANSIMPEDANCE 

PREAMPLIFIER 

STAND ALONE 

TRANSIMPEDANCE 

PREAMPLIFIER 

Coupling AC/DC AC/DC AC AC/DC AC/DC 

STCC-04 

TEC controller + + + + – 

MTCC-01 

Miniature TEC controller + + + + – 

PPS-02 

Preamplifier power supply + + + + + 

MPPS-01 

Preamplfier linear power supply + + + + – 

AC Power Supply 

Power supply for STCC-04 or PPS-02 + + + + + 

BNC – SMA 

Signal output cable + + + + – 

BNC - BNC 

Signal input or output cable – – – – + 

DB9 – LEMO 

TEC & Supply cable for STCC-04 

controller 

DB9 – 4mm PLUGS 

Preamplifier supply cable for own 

supply 

+ + + – – 

– – – – + 

DB9 – DB9 

Preamplifier supply cable – – – – + 

AMP2X4 – AMP2X4 

TEC & Supply cable for MTCC-01 

controller 

+ – – – – 

DB9 – AMP2X4 

Connecting cable + – – – – 

LEMO-AMP2X4 

Connecting cable + + + + – 

MMCX – SMA 

Signal output cable – – – + – 

MHS-1 

Additional heat sinks + – – – – 

MHS-2 

Additional heat sinks + – – + – 

DRB-1 

Heat sink base – + + – – 

Mounting post 

Holder DH-BNC-1 

– + + – – 

– – – – + 



MIPAC-xx, MIPDC-xx Series 

IR DETECTION MODULE 

FEATURES 

- Compact size 

- Easy to use 

- High Signal/Noise ratio 

- Bandwidth up to 250 MHz 

- 2, 3 and 4 stage TE cooled detectors 

- Additional accessories available 


APPLICATIONS 

- Contactless temperature measurement 

- Free space optical communication 

- Laser radiation detection 

- Gas analysis 

- Fourier spectroscopy 

- Fire, flame and human body detection 

- Pyrometers, scanners 

- Nondestructive material testing 

- OEM Applications 

SPECIFICATION 

Parameter Unit Typical value Conditions, Remarks 

Input noise current density i n pA/√Hz 0.02 – 3.5 1) MIPAC, MIPDC, f o=10kHz 3) 

Input noise voltage density e n nV/√Hz 0.97 – 8.0 1) MIPAC, MIPDC, f o=10kHz 3) 

Detector capacitance C i pF ≤100 2) 

DC 

MIPDC 

Cut-on frequency f lo 

Hz 10 to 10 4 MIPAC 

Cut-off frequency f hi MHz 0.1 to 250 MIPAC, MIPDC 

Transimpedance K i V/A up to 10 5 MIPAC, MIPDC 

Output impedance R out Ω 50 

Output voltage swing V out 

V 

V 

V 

Output voltage offset V off mV max. ±20 MIPAC, MIPDC 

±10 

±2 

±1 

f hi ≤ 1 MHz, R L=1MΩ 4) 

1 MHz

DESCRIPTIONS 

MIPXC-xx is the IR detection module. It includes infrared detector integrated with transimpedance AC or DC coupled 

preamplifier. It is dedicated for OEM applications and requires external heat sink (see recommended accessories). 

Bandwidth up to 250MHz are available. 

SCHEMATIC DIAGRAM 

PREAMPLFIER/MODULE CODE DESCRIPTION 

MIPXC-xx 

XX - Coupling type – AC or DC 

xx – High cut-off frequency: 0.1, 0.3, 1, 5, 10, 20, 50, 100, 250 MHz 

The preamplifier can be integrated with following types of TE cooled IR detectors: 

Detector type 2) 

Description 

PC-2TE, PC-3TE, PC-4TE 

Photoconductive 

PCI-2TE, PCI-3TE, PCI-4TE 

Photoconductive, optically immersed 

PV-2TE, PV-3TE, PV-4TE 

Photovoltaic 

PVI-2TE, PVI-3TE, PVI-4TE 

Photovoltaic, optically immersed 

PVM-2TE, PVM-3TE, PVM-4TE 

Multiple heterojunction photovoltaic 

PVMI-2TE, PVMI-3TE, PVMI-4TE 

Multiple heterojunction photovoltaic, optically immersed 

Symbol -2TE, -3TE, -4TE means 2, 3, 4 stage TE cooler respectively 

POWER SUPPLY CONNECTOR 

Pin number Symbol Function 

1 –V sup Power supply input (–) 

2 TH2 Thermistor input 

3 GND/FAN+ Power ground or FAN (+) 

4 TEC– TEC supply input (–) 

5 GND Power ground 


7 +V sup Power supply input (+) 

8 TEC+ TEC supply input (+) 

Power Supply Connector model AMP 2x4 



DIMENSIONS [mm] 

ACCESSORIES 

BNC-SMA AMP 2x4 – AMP 2x4 DB-9 – AMP 2x4 MHS-1 

Signal output cable 

TEC & Supply cable 

for MTCC-01 controller 


for STCC-04 controller 

Additional heat sink 

STCC-04 

MTCC-01 

Standard thermoelectric cooler 

controller 

Miniature thermoelectric cooler 

controller 



MIPACv2-F-xx, MIPDCv2-F-xx Series 


FEATURES 


- Easy to use 



- 2, 3 and 4 stage TE cooled detectors 



APPLICATIONS 










SPECIFICATION 

Parameter Unit Typical Value Conditions, Remarks 

Input noise current density i n pA/√Hz 0.02 – 3.5 1) MIPACv2-F,MIPDC-F, fo=10kHz 3) 

Input noise voltage density e n nV/√Hz 0.97 – 8.0 1) MIPACv2-F, MIPDC-F, fo=10kHz 3) 


DC 

MIPDCv2-F 


Hz 10 to 10 4 MIPACv2-F 

Cut-off frequency f hi MHz 0.1 to 250 MIPACv2-F, MIPDCv2-F 

Transimpedance K i V/A up to 10 5 MIPACv2-F, MIPDCv2-F 



V 

V 

V 

±10 

±2 

±1 

f hi ≤ 1 MHz, R L=1MΩ 4) 

1 MHz

DESCRIPTION 

MIPxCv2-F-xx The infrared detector is integrated with AC or DC coupled transimpedance preamplifier. High 

performance is achieved by individual matching of the IR detector to the preamplifier and good heat dissipation 

management. 


PREAMPLFIER/MODULE CODE DESCRIPTION 

MIPXCv2-F-xx 

X – Coupling type – AC or DC 


v2 - M4 mounting hole 


Detector type 

Description 







Symbols -2TE, -3TE, -4TE means 2, 3, 4 stage TE cooler respectively 



Photovoltaic 


















5 

4 6 

9 

3 7 

2 8 1 


9 N.C. Not connected 

LEMO Connector model ECG.0B.309.CLN 

ACCESORIES 



for STCC-04 controller 


for MTCC-01 controller 

Heat sink base 

STCC-04 

MTCC-01 


controller 


controller 



SIPAC-xx, SIPDC-xx Series 


FEATURES 

- Very small size 

- Easy to use 



- 2, 3, 4 stage TE cooled detectors 

- Adjustable gain 

- Biased and non-biased detector compatible 

- Fully protected against exceeding supply voltage 

and reversing power supply polarity 

- Miniature MMCX connector as a signal output, 

- AMPMODU connector for supply, TEC, thermistor & 

DC monitor 


SPECIFICATION 

APPLICATIONS 











Input noise current density i n pA/√Hz 0.02 – 3.5 1) f o=10kHz 3) 

Input noise voltage density e n nV/√Hz 0.97 – 8.0 1) f o=10kHz 3) 



Hz 

DC 

10 to 10 3 SIPDC 

SIPAC 

Cut-off frequency f hi MHz 0.1 to 250 SIPAC, SIPDC 

Transimpedance K i V/A variable, up to 2 x 10 5 SIPAC, SIPDC 

Transimpedance range 

K i max 

K i min 

up to 7 dependent on the top frequency 



Output voltage offset V off mV max. ±20 

Power supply voltage V sup 

V 

V 

V 

V 

±10 

±1 

±15 

±9 

f hi ≤ 1MHz, R L=1MΩ 4) 

1MHz

DESCRIPTION 

SIPXC-xx is an ultra small IR detection module. It includes infrared detector integrated with transimpedance 

preamplifier, internally AC od DC coupled. It is dedicated to OEM applications and requires external heat sink (see 

recomendeded accessories). The preamplifier is designed to work with both biased and non-biased detectors. 


PREAMPLIFIER/MODULE CODE DESCRIPTION 

SIPXC-xx 

XX – Coupling type – AC or DC 



Pin 

number 

Symbol 

Function 

1 -V SUP Power supply (-) 

2 TH2 Thermistor 

3 DC mon DC monitor 

4 TEC- TEC supply (-) 


6 TH1 Thermistor 

7 +V SUP Power supply (+) 

8 TEC+ TEC Supply (+) 

AMPMODU Connector 2 x 4 pin 




ACCESSORIES 

MHS-2 STCC-04 PPS-02 MTCC-01 

Additional heat sink 


controller 

Preamplifier power supply 


controller 

MPPS-01 

MMCX - SMA 

Preamplifier linear power supply 




VPAC - 1000F 

WIDE BANDWIDTH IR DETECTION MODULE 

SPECIFICATION 

FEATURES 


- Wide bandwidth 

- Precise I-V conversion 

- Detector biasing possibility up to +800mV 

- Low current noise 

- Co-operation with high resistance detectors 

- Effective cooling up to 4-stage thermoelectric coolers 

APPLICATIONS 

- Laser technology 

- Fast laser pulse measurement 

- Telemetry 

- Sighting systems 

- Free space optics 

Parameter Units Value Conditions, Remarks 

Input noise current density i n pA/√Hz 5 1) f o=100kHz 2) 

Input noise voltage density e n nV/√Hz 1.1 1) f o=100kHz 2) 

Input capacitance C i pF 1 

Cut-on frequency f lo kHz 10 3 dB 

Cut-off frequency f hi GHz 1 3 dB 

Transimpedance K i V/A 8.5·10 3 R L=50 Ω 3) 

Output voltage swing V out V ±0.8 R L=50 Ω 3) 


Power supply voltage V sup V +12,-5 

Power supply current I sup mA +60, -20 I sup @ no detector biasing 

Electrical characteristics @ T a=20ºC 

1) 

The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors 

operating at high frequencies. 

2) 

f 0 – Noise measurement frequency 

3) 

R L – Load resistance 

DESCRIPTION 

VPAC-1000F is the high speed IR detection module. It includes transimpedance preamplifier integrated with infrared 

detector. This detection module is dedicated to high speed infrared measurements and it is suitable for most of VIGO 

System's IR detectors. 





VPAC-1000F 

Coupling type – AC 

High cut-off frequency: 1GHz 


Detector type 1) 

Description 






Photovoltaic 







1) Symbol -2TE, -3TE, -4TE means respectively 2, 3, 4 stage TE cooler 

2) 















LEMO Connector model ECG.0B.309.CLN 



VPAC-xxS, VPDC-xxS Series 

STAND ALONE PREAMPLIFIER 

SPECIFICATION 

FEATURES 


- Easy to use 


- Uncooled detector 



APPLICATIONS 









Input noise voltage density e n nV/√Hz 0.97 – 8.0 1) VPAC, VPDC, f o=100kHz 3) 

Input noise current density i n pA/√Hz 0.97 – 3.5 1) VPAC, VPDC, f o=100kHz 3) 



Hz 

DC 

10 or 10 3 VPDC 

VPAC 

Cut-off frequency f hi MHz ≤20 VPDC, VPAC 

Transimpedance K i V/A up to 10 5 VPAC, VPDC 



V 

V 

V 

±10 

±2 

±1 



f hi ≤ 20MHz, R L=50Ω 4) 

Output voltage offset V off 

mV 

mV 

≤20 

≤20 

VPAC 

VPDC 


V 

V 

V 

±15 

±9 

f hi ≤ 1 MHz 

1MHz < f hi ≤ 20 MHz 

Power supply current I sup mA ±25 

Dimensions mm 50x104x23.5 width x depth x height 

Mass g 260 


1) 

The preamplifier noise may significantly reduce the system performance in some situations, however. This happens for large capacitance 

detectors operating at high frequencies. 

2) 

For 100pF detector capacitance available bandwidth is ~10MHz 

3) 

f 0 – Noise measurement frequency 

4) 

R L – Load resistance 



DESCRIPTION 

The VPXC-xxS is stand alone preamplifier dedicated suitable for operation with VIGO System's uncooled infrared 

detectors. Both AC and DC coupling is available. The detector bias circuit included. 


Detector 

biasing 3) 

Supply 

Regulator 

EMI 

Filters 

Supply 

& Control 

Connector 

From detector unit Transimpedance C 1) 

or voltage 

preamplifier 

Offset 

Adjustment 2) 

Output 

stage 

BNC 

Output 

Connector 

1) Only for AC-coupled preamplifiers 

2) Only for DC-coupled preamplifiers 

3) Only for biased detectors 


VPXC-xxS 

XX – Coupling type – AC or DC 

xx – High cut-off frequency: 0.1, 0.3, 1, 5, 10, 20 MHz 

The preamplifier can be integrated with following types of uncooled IR detectors: 

Detector type 

Description 

PC 


PCI 


PV 

Photovoltaic 

PVI 


PVM 


PVMI Multiple heterojunction photovoltaic, optically immersed 















DB9 Connector Male 

ACCESSORIES 

BNC-BNC DB9 - 4mmPLUGS DB9 - DB9 PPS-02 

Signal input or output cable Preamplifier suply cable for 

own supply 

DRB1 

DH-BNC-1 

Preamplifier supply cable 

for PPS-02 

Preamplifier power supply 

Heat sink base 

Detector's holder 



MTCC-01-xxx 

MINIATURE TEC CONTROLLER 

FEATURES 


- Low cost 

- Easy to use 

- High stability 

- Adjustable temperature 

- Low power consumption 

APPLICATIONS 

- Temperature control of TE cooled IR detectors 


SPECIFICATION 

Parameter 

Units 

Typical 

value 

Temperature stability K ±0.01 

Conditions, Remarks 

Settling time of the set detector temperature 

s 

s 

60 

90 

2-stage TEC, T det=230K 

3-stage TEC, T det=210K 


V 

V 

2.6 to 5.5 

4.0 to 5.5 

for 2-stage TEC 


Maximum TEC output current I tec 

A 

A 

1.1 

0.43 



Maximum TEC output voltage V tec V 3.6 

Dimensions mm 70 x 45 x 19 width x depth x height 

Mass g 35 

Electrical characteristics @T a=20ºC, V dd=5V 

DESCRIPTION 

The MTCC-01 miniature TEC controller is designed to control temperature of 2- or 3-stage TE cooled IR detectors. 

MTCC-01 can be used with the Integrated Detector / Preamplifier Module MIPxC seriec and SIPxC series. The target 

temperature is factory adjusted in range of 205 to 255K. 

The TEC controller is paired in the factory with the detector delivered in the IR set. 

Swapping controllers may cause malfunction or damage of TEC and detector. 



EXAMPLE WIRING DIAGRAM 

MIPAC, MIPDC, 

MVPAC or MVPDC 

Integrated Preamplifier 

AMP2x4-AMP2x4 

Cable 

MTCC-01 TEC Controller 

J2 

J1 

MPPS-01 

AC Power 

Adaptor 

110 or 240VAC 

50..60Hz 

SMA-BNC-1 

Cable 

to oscilloscope 

POWER SUPPLY CONNECTORS 

Pin configuration of power connector (J1): 

Pin configuration of preamplifier connector (J2): 

Pin 

number 

Symbol 

Function 

Pin 

number 

Symbol 

Function 

1 +V dd TEC controller power supply 1 –V sup Power supply output (–) 

2 TGND 1) TEC controller power ground 2 TH2 1) Thermistor input 

3 +V sup 2) 3) Power supply input (+) 3 V fan / N.C. Fan supply / open 

4 GND 1) 3) Power ground 4 TEC– TEC supply output (–) 

5 V fan / N.C. Fan supply / open 5 GND Power ground 

6 –V sup 2) 3) Power supply input (–) 6 TH1 1) Thermistor input 

1) 

TGND and GND should be connected together in power 

adapter. 

2) 

See preamplifier specification for details. 

3) 

Only for preamplifier module supply, not required for proper 

controller operation. 

For more details about TEC cooling see IR Detectors Catalog. 

WARNING: Do not short TEC- or TEC+ to any other supply or 

to GND! 

7 +V sup Power supply output (+) 

8 TEC+ TEC supply output (+) 

1) Thermistor polarity without significance. 




xxx 

-2TE 

-3TE 

MTCC – 01 – xxx 

Product identifier 

two-stage cooler controller 

three-stage cooler controller 

ACCESSORIES 

MPPS-01 

Linear AC power supply 



TEC CONTROLLER 

Standard cooler controller 

DESCRIPTION 

The STCC-04 is a thermoelectric cooler controller with 

+/- 0.01ºC stability. The unit provides low noise power 

supply for integrated preamplifiers. 

FEATURES 

- Provides Proper Detector Cooling 

- Preamplifier Power Supply Included 

- Temperature Lock Indicator 

Cooler controller with regulation 

SPECIFICATION 

Parameter 

Unit 

Value 

Min Typ Max 

Conditions and Remarks 

Long term stability °C ±0.01 T det=233K (-40°C) 

Settling time of the set detector 

temperature 

s 

s 

s 

25 

300 

300 

T det=233K (-40°C) ∆T det=0.1°C 

T det=205K (-60°C) ∆T det=0.1°C 

T det=193K (-80°C) ∆T det=0.1°C 

Maximum voltage across TEC element 

V 

V 

V 

2.5 

4.0 

7.7 

STCC-04-xx-2 

STCC-04-xx-3 

STCC-04-xx-4 

Ripple of output current % 0.5 I tec=1A 

Output current of the built-in power supply 

mA 

mA 

mA 

±100 

±100 

±100 

STCC-04-09 

STCC-04-12 

STCC-04-15 


V 

V 

4.5 

11.5 

5.5 

12.5 

STCC-04-xx-2; STCC-04-xx-3 

STCC-04-xx-4 

Power supply current I sup 

mA 

mA 

mA 

20 

350 

1100 

STCC=-04-00, I tec=0 

STCC-04-00, I tec=1A, U tec=1V 

STCC-04-15, I pre=±100mA, I tec=1A, U tec=1V 

Series resistance of the connecting cable mΩ 1000 Total resistance of the wires supplying TEC element 

Dimensions 

mm 

mm 

mm 

82 

60 

150 

Width 

Height 

Depth 

Mass 

kg 

kg 

kg 

0.25 

0.27 

0.14 

STCC-04-00 

Remaining models 

Cable connecting IR detecting set 

Storage temperature °C -25 50 

Ambient temperature °C 10 35 





Cooler controller with regulation 

Standard cooler controller 



STCC-04 - xx - x A - xx 

00 

09 

12 

15 

G1 

2 

3 

4 

A 

B 


P5 

40 

60 

80 

RC 

R4 


1 TEC+ TEC supply output (+) 

2 TEC- TEC supply output (-) 


4 TH1 Thermistor output (1) 

5 TH2 Thermistor output (2) 

6 –V sup Power supply output (-) 

STCC-04 

Extended Symbol 

Product identifier 

-15 Type of built-in power supply: 

00 – no power supply 

09 – power supply ±9V / ±100mA 



G1 – combined power supply (+12V, -5V) for VPAC- 

1000F Preamplifier 

-2 Type of TE cooler: 

2 – two-stage cooler(standard) 

3 – three-stage cooler 

4 – four-stage cooler 

A 

-RC 

Type of thermistor: 

A – TB06-222 (standard) 

B – BR14KA132J-A (only for certain types of 

IR detectors) 

Programmed temperature of IR detector: 

P5 – 278K (+5ºC) 

30 – 243K (-30ºC) 

35 – 238K (-35ºC) 

40 – 233K (-40ºC) 

60 – 213K (-60ºC) 

80 – 193K (-80ºC) 

RC – precisely adjusted within the range 

233 to 278K (-40 to +5ºC for 2,3 TE cooled detectors 

only) 

R4 – switched within the range 233 to 243K 

(-40 to -30ºC for 2,3 TE cooled detectors only) 

Custom-set temperatures are also available (for 2,3 TE 

colled detectors only). 

Note: for 4TE cooled detectors STCC-04 are available 

with fixed temperature only. 

7 FAN+ FAN (+) 






PPS-02 

PREAMPLIFIER POWER SUPPLY 

FEATURES 


- Easy to use 

DESCRIPTION 

Preamplifier Power Supply is designed for supplying 

VIGO System Detection Modules included uncooled 

IR detectors. 

SPECIFICATION 

Parameter Unit Value Conditions, Remarks 

Power supply voltage V sup V AC 100 to 240 50 to 60 Hz 

Output voltage V DC ±9, ±12, ±15 Ta=22ºC 

Output current mA ±100 Ta=22ºC 

















POWER SUPPLY CODE DESCRIPTION 

PPS- 02-XX 

XX – Output supply voltage value 




G1 – combined power supply (+12V, -5V) for VPAC-1000F Preamplifier 



MPPS-01 

PREAMPLIFIER LINEAR POWER SUPPLY 

FEATURES 

- Provides low noise preamplifier power supply 

DESCRIPTION 

Preamplifier Power Supply is designed for supplying VIGO System Detection Modules. 

SPECIFICATION 

Parameter Unit Value Conditions, Remarks 

Power supply voltage V sup V AC 100 or 230 * 50 to 60 Hz 

Output voltage V DC ±9, ±12, ±15 1) 

Output current mA ±500 

Electrical characteristics @ Ta=20ºC 

1) 

Values of the output voltage are available upon request 

* Must be specified in order 

POWER SUPPLY CODE DESCRIPTION 

MPPS- 01-XX 

XX – Output supply voltage value 




G1 – combined power supply (+12V, -5V) for VPAC-1000F Preamplifier 





Pin 

number 

Symbol 

Function 

1 TGND Thermoelectric Cooler Controller Ground 



4 -V sup Power supply output (-) 

5 V TEC Thermoelectric Cooler Controller Supply (+) 

Amphenol connector model C091 

IMPORTANT NOTE! 

In formal order please let us know value of the Supply Voltage (100VAC or 240VAC). 

Output Connector are provided for specified IR detection module requested in your formal order. If you want to apply 

MPPS-01 power supply to self made system please specify configuration of the output connector pinout. 



DRB-1 

HEAT SINK BASE 

FEATURES 

- Stable construction 

- Adjustable height 

- Durable steel elements 


COMPATIBLE WITH: 

- DR-1 

- DR-10 

- MXPXX-F 

- Detector's holder DH-BNC-1 

- Lab detector 

- VPAC-1000F 

- MHS-1 heat sink for MxPxC 

SPECIFICATION 

Parameter 

Weight 

Usable height 

Base diameter 

Thread 

Value 

1390 g 

108..178 mm 

120 mm 

M8x1 or 1/4-20 UNC 




MOUNTING POST 

FEATURES 

- Durable steel elements 

- Chrome-plated 


COMPATIBLE WITH: 

- DRB-1 

- DR-1 

- DR-10 

- MXPXX-F 

- Detector's holder DH-BNC-1 

- Lab detector 

- VPAC-1000F 

- MHS-1 heat sink for MxPxC 

SPECIFICATION 

Parameter 

Weight 

Thread 

Value 

126 g 

M8x1 or 1/4-20 UNC 


\ 



Cables & Connectors 





DB9 – 4mm PLUGS 

Power supply cable for VPxC-xxS 

DB9 – DB9 

Connecting cable for DR-1, STCC-04 

DB9 – AMP2X4 

Connecting cable for MIPxC, STCC-04 

LEMO-AMP2X4 

Connecting cable for MIPAC-F, VPAC- 

1000F, STCC-04, MTCC-01 



AC Adapters 

Symbol Description/Destination View 

Nordic Power 06215 

Power Supply type 

Nordic Power 06215 

(110-230VAC) 

Mechanical Accessories 

Symbol Description/Destination View 

DRB-1 Heat Sink Base 



WARRANTY 

VIGO System S.A. hereby represents and warrants all Products manufactured by VIGO and sold hereunder to be 

free from defects in workmanship or material during a period of twelve (12) months from the date of delivery save for 

products for which a special warranty is given. If any Product proves however to be defective in workmanship or 

material within the period herein provided VIGO System undertakes to the exclusion of any other remedy to repair or 

at its own option replace the defective Product or part thereof free of charge and otherwise on the same conditions 

as for the original Product or part without extension to original warranty time. Defective parts replaced in accordance 

with this clause shall be placed at the disposal of VIGO. 

VIGO also warrants the quality of all repair and service works performed by its employees to products sold by it. In 

case the repair or service works should appear inadequate or faulty and should this cause malfunction or 

nonfunctioning of the product to which the service was performed VIGO shall at its free option either repair or have 

repaired or replace the product in question. The working hours used by employees of VIGO for such repair or 

replacement shall be free of charge to the client. This service warranty shall be valid for a period of six (6) months 

from the date the service measures were completed. 

This warranty is however subject to following conditions: 

1. A substantiated written claim as to any alleged defects shall have been received by VIGO System within 

thirty (30) days after the defect or fault became known or occurred, and 

2. The allegedly defective Product or part shall, should VIGO so require, be sent to the works of VIGO or to 

such other place as VIGO may indicate in writing, freight and insurance prepaid, properly packed and 

labeled. 

This warranty does not however apply when the defect has been caused through 

1. normal wear and tear or accident; 

2. misuse or other unsuitable or unauthorized use of the Product or negligence or error in storing, maintaining 

or in handling the Product or any equipment thereof; 

3. wrong installation, assembly or failure to service the Product or otherwise follow VIGO's service instructions 

including any repairs or installation or assembly or service made by unauthorized personnel not approved 

by VIGO or replacements with parts not manufactured or supplied by VIGO; 

4. modifications or changes of the Product as well as any adding to it without VIGO's prior authorization; 

5. burned active element by irradiation above damage thresholds 

6. electrostatic discharges 

7. improper detector bias 

8. improper TE cooler bias (TE cooler damage or active element overheating). 

9. other factors dependent on the Customer or a third party. 

Notwithstanding the aforesaid VIGO System liability under this clause shall not apply to any defects arising out of 

materials, designs or instructions provided by the Customer. 

This warranty is expressly in lieu of and excludes all other conditions, warranties and liabilities, expressed or implied, 

whether under law, statute or otherwise, including without limitation any implied warranties of merchantability or 

fitness for a particular purpose and all other obligations and liabilities of VIGO or its representatives with respect to 

any defect or deficiency applicable to or resulting directly or indirectly from the Products supplied hereunder, which 

obligations and liabilities are hereby expressly canceled and waived. VIGO's liability shall under no circumstances 

exceed the invoice price of any Product for which a warranty claim is made, nor shall VIGO in any circumstances be 

liable for lost profits or other consequential loss whether direct or indirect or for special damage. 

RMA Request Instructions: 

• No Product may be returned without first contacting VIGO for a Return Material Authorization ('RMA') 

number. 

• Please obtain a RMA number at claim@vigo.com.pl before returning any item. When requesting a RMA 

number, please state your order number, the product you wish to return and the reason for return. We will 

only accept returns which have an RMA number. Authorized returns are to be shipped according to received 

instruction from VIGO in appropriate shipping box. An unauthorized return, i.e. one for which an RMA 

number has not been issued and authorized returns however, shipped with incorrect customs documents - 

will not be accepted. 

• Please print the RMA number clearly on the return label to avoid any delay in processing. Please send 

package to: 

VIGO System S.A. 

129/133 Poznanska St., 

PL 05-850 Ozarow Mazowiecki 

Poland 



VIGO System S.A. 

129/133 Poznanska Street, 

05-850 Ozarow Mazowiecki, Poland 

Phone number: (+48 22) 666 14 06, 733 54 21 

Fax: (+48 22) 665 21 55 

www.vigo.com.pl 

Email: info@vigo.com.pl 

DISTRIBUTORS 

CHINA 

CHINA 

CHINA 

FRANCE 

GERMANY 

BIT Photoelectronic Co.,Ltd. 

Room 706,Science & Technology Tower 

No.9 Zhongguancun South Street, Haidian 

Beijing 100081 

Tel:+86 10 68913630 

Fax:+86 10 68470197 

WWW address: http://www.bitpe.com 

Contact: Dr.Liu Guangrong 

Shanghai Weining Technology Development Co., Ltd. 

299 E MEI ROAD 

Yao Jiang International Plaza 

Building 3, Suite 3201 

Shanghai, China 

Post Code: 200080 

Tel: +86-21-6325 1916 /6325 1917 Fax: +86-21-6325 1915 

e-mail: jamesxu2005@126.com 

WWW address: http://www.weiningtech.com 

Contact: Dr James Xu 

Xi'an Gatherstar Photoelectronic Tech Co., Ltd 

1807,Block C,Software Mansion, West Electronic Community, No18.Electronic Road 

1,Xi`An China 

Tel: 0086-029-88229607-8035 

fax: 0086-029-88227252 

e-mail: zhangzhiyuan@fy-ic.com, fangyuanming2572@hotmail.com 

WWW address: http://www.gatherstar.com 

BFI OPTILAS 

4, Allée du Cantal Z.I. 

La Petite Montagne Sud 

CE 1834 - 91018 - EVRY Cedex 

Tel : +33(0) 46 787 55 96 

Fax : +33(0) 46 787 56 38 

email: Robert.Jourdan@bfioptilas.com 

WWW address: http://www.bfioptilas.com/ 

DoroTEK GmbH 

Flugplatzstr. F1, Nr. 9 

D - 15344 Strausberg 



ITALY 

JAPAN 

THE NETHERLANDS 

UNITED KINGDOM 

USA & CANADA 

phone: (49) 3341-215427 

fax: (49) 3341-215429 

email: info@dorotek.de 

WWW address: http://www.dorotek.de 

Massimo Bonfante 

Via Capecelatro 87 

20148 Milan 

phone: +39 02 36.52.46.30 

fax: +39 02 99.98.12.25 

email: info@masbonfante.it 

WWW address: http://www.masbonfante.it 

FIT Leadintex, Inc. 

2-7 Nihonbashi-Odenmacho 

Chuo-Ku, Tokyo 103-0011 Japan 

tel: 81-3-3666-7100 

fax: 81-3-3666-7007 

email: sales@fit-leadintex.jp 

WWW address: http://www.fit-leadintex.jp 

Jonat Automation BV 

5105 NA Dongen 

3009 GA Rotterdam 

Tel. +31- (0)13-5716234 

Fax +31- (0)13-5715588 

email: info@jonat.com 

WWW address: http://www.jonat.com 

Photonic Solutions plc 

Unit A, 40 Captains Road, 

Edinburgh EH17 8QF, UK 

phone: +44(0) 131 664 81 22 

fax: +44(0) 131 664 81 44 

email: keith.mitchell@photonicsolutions.co.uk 

WWW address: www.photonicsolutions.co.uk 

BOSTON ELECTRONICS CORPORATION 

91 Boylston, Brookline 

Massachusetts 02 445 

phone: (617) 566 3821 

fax: (617) 731 0935 

email:vigo@boselec.com 

WWW address: http://www.boselec.com

IR Detectors Catalogue - VIGO System SA

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