COMPLEMENTARY SILICON POWER TRANSISTORS

TIP33C / TIP34C
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.56
o C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 140 V 400 µA
Current (V BE = 0)
I CEO Collector Cut-off V CE = 60 V 0.7 mA
Current (I B = 0)
I EBO Emitter Cut-off Current
(I C = 0)
V EB = 5 V 1 mA
V CEO(sus)∗
Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) ∗ Collector-Emitter I C = 3 A
I B = 0.3 A
Saturation Voltage I C = 10 A
I B = 2.5 A
V BE(on) ∗ Base-Emitter Voltage I C = 3 A V CE = 4 V
I C = 10 A
V CE = 4 V
h FE ∗ DC Current Gain I C = 1 A V CE = 4 V
I C = 3 A
V CE = 4 V
h fe Small Signal Current I C = 0.5 A V CE = 10 V
Gain
f = 1 KHz
f T Transition frequency I C = 0.5 A V CE = 10 V
f = 1 MHz
t on
t s
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
t f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I C = 30 mA 100 V
VCC = 30V
V BB = - 6 V
t p = 20 µs
I C = 6 A
I B1 = - I B2 = 0.6 A
1
4
1.6
3
40
20 100
20
V
V
V
V
3 MHz
0.6
0.4
1
µs
µs
µs
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