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Taguchi Gas Sensors (TGS)

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Palladium-Based Hydrogen <strong>Sensors</strong><br />

Pd-Gate MOS (Lundström, 1975):<br />

-Palladium gate and thin tin oxide (about 10nm)<br />

Hydrogen atoms diffuse to the Pd/Oxide interface<br />

and act like a dipoles, thus modifiying the Pd workfunction.<br />

[H 2 ] modifies the threshold voltage.<br />

Q<br />

4qN<br />

ss<br />

Aε<br />

0ε<br />

sψ<br />

B<br />

V = ϕ − + 2 ψ +<br />

TH<br />

ms<br />

C<br />

ox<br />

B<br />

C<br />

Basic Measurement Circuit:<br />

ox<br />

I<br />

d<br />

C<br />

W<br />

Vg = V<br />

ox<br />

2<br />

= µ d<br />

( Vgs<br />

−VT<br />

)<br />

L<br />

<br />

TH<br />

µ CoxW<br />

+<br />

I<br />

L<br />

Measured Voltage Shift:<br />

∆V<br />

g<br />

=<br />

∆V<br />

MAX<br />

1+<br />

C<br />

C<br />

PH<br />

PH<br />

2<br />

2<br />

/<br />

/ PO<br />

PO<br />

2<br />

2

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