Characterization of HgCdTe MWIR Back-Illuminated II-VI-07 ... - Voxtel

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80 K we measured are about 0.3 µA/cm² at -10.0 V for 250×250 µm² devices with a cutoff wavelength of 4.23 µm at 80 K. This is about one to two orders of magnitude above the lowest values reported by DRS 26 for 80 K and -10.0 V, for comparable cutoff wavelengths. We believe that lower dark currents at large reverse bias will result from improved device designs and processing. We reported data for gain versus temperature for 250×250 µm² devices from two films over the 80- 200 K temperature range. This paper presented the first report of the dependence of measured gain on junction area for a family of widely-spaced circular diodes with diameters ranging from 40 µm to 350 µm, with measured gains of 70 for the smallest diodes and 50 for the largest. We interpret the variation of measured gain with junction area in terms of edge-enhanced electric field, which is consistent with edge features seen in our data for the spatial behavior of gain. We obtain a good fit the data for measured gain versus junction area with a simple two-gain model, having a lower interior gain and a higher edge gain for laterally collected minority photocarriers. We reported data for the noise multiplication factor F(M), which show F(M)≈1 for gain up to 150 at 196 K, for a cutoff wavelength of 4.06 µm at 160 K. We described the characteristics of an abrupt breakdown phenomenon that is seen in nearly all our devices at sufficiently high reverse bias voltage. The breakdown voltage increases with increasing temperature, is larger for shorter cutoff wavelength, and tends to be the same within a film. Some diodes recover after breakdown while others are permanently shorted. We believe the abrupt breakdown in our devices is technological, not fundamental, and that higher breakdown voltages will result from improved device designs and processing. ACKNOWLEDGEMENTS Characterization of MWIR HgCdTe e-APDs was done at the BAE Systems facility in Lexington, Massachusetts, and was funded by BAE Systems internal funds. Data were also taken Voxtel, Inc. in Beaverton, Oregon. The devices were made and initially characterized under funding from Voxtel, Inc. under -16-
NASA Contract CA28C from the Jet Propulsion Laboratory, Pasadena, California. We acknowledge the collaboration and support of our colleagues at BAE Systems, Gary R. Woodward and Dr. Paul LoVecchio. REFERENCES 1. J.D. Beck, C-F Wan, M.A. Kinch and J.E. Robinson, "MWIR HgCdTe avalanche photodiodes," Proc. SPIE 4454, 188-197 (2001). 2. M.A. Kinch, J.D. Beck, C-F Wan, F. Ma and J. Campbell, "HgCdTe Electron Avalanche Photodiodes," J. Electronic Mat. 33, 630-639 (2004). 3. M.B. Reine, J.W. Marciniec, K.K. Wong, T. Parodos, J.D. Mullarkey, P.A. Lamarre, S.P. Tobin, K.A. Gustavsen and G.M. Williams, “HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays,” Proc. SPIE 6294, 629503 (2006). 3. M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin, K. A. Gustavsen and G. M. Williams, “HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays,” J. Electronic Materials 36, 1059 (2007). 5. T.J. Tredwell, "(Hg,Cd)Te Photodiodes for Detection of Two-Micrometer Infrared Radiation," Optical Engineering 16, 237 (1977). 6. S.H. Shin, J.G. Pasko, H.D. Law and D.T. Cheung, “1.22 µm HgCdTe/CdTe Avalanche Photodiodes,” Appl. Phys. Lett. 40, 965 (1982). 7. C. Verie, F. Raymond, J. Besson and T.N. Duy, “Bandgap Spin-Orbit Splitting Resonance Effect in Hg 1- xCd x Te Alloys,” J. Crystal Growth 59, 342 (1982). -17-
Page 1 and 2: Characterization of HgCdTe MWIR Bac
Page 3 and 4: INTRODUCTION The Hg 1-x Cd x Te ele
Page 5 and 6: advantages of the HgCdTe energy ban
Page 7 and 8: More recent results on HgCdTe e-APD
Page 9 and 10: current and dark current plus dc ph
Page 11 and 12: temperature than the dashed curves,
Page 13 and 14: Noise measurements were done at Vox
Page 15: The breakdown voltage increases wit
Page 19 and 20: 15. T.J. de Lyon, B. Baumgratz, G.
Page 21 and 22: 29. J. Beck, M. Woodall, R. Scritch
Page 23 and 24: Unit Cell CdTe Passivation Indium B
Page 25 and 26: 1000 100 Gain at -9.0 V 10 235-G, E
Page 27 and 28: 1E-7 10000 Relative Response 1E-8 1

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