Characterization of HgCdTe MWIR Back-Illuminated II-VI-07 ... - Voxtel

1E-7
10000
Relative Response
1E-8
1E-9
1E-10
V = -5 V
V = 0
Gain, avg = 10.8
163-A1, El 56
λ CO =4.24 µm at 80 K
T=79 K
With filter 1000
FWHM:
210.97 µm at 0 V
214.73 µm at -5 V
∆=3.76 µm
100
10
Ratio
1E-11
1
-250 -200 -150 -100 -50 0 50 100 150 200 250
Distance (µm)
Fig. 9. Spot scan profiles for a 250×250 µm² unit cell in a 4×4 e-APD array at 79 K, for V=0 and V=-5.0 V.
The ratio of the -5.0 V data to the V=0 data is defined as the gain, and is plotted on the right-hand axis. The
gain is spatially uniform in the interior of the diode, with an average value of 10.8 at -5.0 V. There is
evidence of gain enhancement seen at the edges of the junction.
5
4
3
163A1, El 80
λ CO =4.06 µm at 160 K
250x250 µm²
T = 196 K
V = -0.1 V to -9.0 V
Voxtel data
k=0
k=0.025
El 80
F(M)
2
1
F(M) normailzed to 1 at V=-0.1 V
0
0 20 40 60 80 100 120 140 160
Gain
Fig. 10. Data for the excess noise multiplication factor F(M) plotted versus gain, at T=196 K, taken at Voxtel
Inc. The two solid curves are plots of the standard McIntyre equation for F(M).
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