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High Order Harmonic Oscillators in Microwave and Millimeter-wave ...

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2 <strong>Oscillators</strong><br />

is typically used. The reactive part of Z L is chosen to resonance the circuit,<br />

X L = −X <strong>in</strong> . (2.24)<br />

When oscillation occurs between the load network <strong>and</strong> the transistor, oscillation simultaneously<br />

occurs at the output port, which we can show as follows. For steady-stage<br />

oscillation at the <strong>in</strong>put port, we must have Γ L Γ <strong>in</strong> = 1, as derived <strong>in</strong> (2.17). Then from<br />

the def<strong>in</strong>ition of the S parameters, we have<br />

1<br />

Γ L<br />

= Γ <strong>in</strong> = S 11 + S 12S 21 Γ T<br />

1 − S 22 Γ T<br />

= S 11 − ∆Γ T<br />

1 − S 22 − ∆Γ T<br />

(2.25)<br />

where ∆ = S 11 S 22 − S 12 S 21 . Solv<strong>in</strong>g for Γ T gives<br />

Then,<br />

Γ T = 1 − S 11Γ L<br />

S 22 − ∆Γ L<br />

. (2.26)<br />

Γ out = S 22 + S 12S 21 Γ L<br />

1 − S 11 Γ L<br />

= S 22 − ∆Γ L<br />

1 − S 11 Γ L<br />

, (2.27)<br />

which shows that Γ T Γ out = 1, <strong>and</strong> hence Z T = −Z out . Thus the condition for oscillation<br />

of the term<strong>in</strong>at<strong>in</strong>g network is satisfied. Note that the appropriate S parameters to use <strong>in</strong><br />

the above development are generally the large-signal parameters of the transistor.<br />

Negative<br />

resistance<br />

device<br />

Load<br />

network<br />

(tun<strong>in</strong>g)<br />

Transistor<br />

[S]<br />

Term<strong>in</strong>at<strong>in</strong>g<br />

network<br />

ΓL<br />

ZL<br />

Γ<strong>in</strong><br />

Z<strong>in</strong><br />

Γout<br />

(Zout)<br />

ΓT<br />

(ZT)<br />

Fig. 2.5: Circuit for a two-port transistor oscillator.<br />

17

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