High Order Harmonic Oscillators in Microwave and Millimeter-wave ...
High Order Harmonic Oscillators in Microwave and Millimeter-wave ...
High Order Harmonic Oscillators in Microwave and Millimeter-wave ...
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2 <strong>Oscillators</strong><br />
is typically used. The reactive part of Z L is chosen to resonance the circuit,<br />
X L = −X <strong>in</strong> . (2.24)<br />
When oscillation occurs between the load network <strong>and</strong> the transistor, oscillation simultaneously<br />
occurs at the output port, which we can show as follows. For steady-stage<br />
oscillation at the <strong>in</strong>put port, we must have Γ L Γ <strong>in</strong> = 1, as derived <strong>in</strong> (2.17). Then from<br />
the def<strong>in</strong>ition of the S parameters, we have<br />
1<br />
Γ L<br />
= Γ <strong>in</strong> = S 11 + S 12S 21 Γ T<br />
1 − S 22 Γ T<br />
= S 11 − ∆Γ T<br />
1 − S 22 − ∆Γ T<br />
(2.25)<br />
where ∆ = S 11 S 22 − S 12 S 21 . Solv<strong>in</strong>g for Γ T gives<br />
Then,<br />
Γ T = 1 − S 11Γ L<br />
S 22 − ∆Γ L<br />
. (2.26)<br />
Γ out = S 22 + S 12S 21 Γ L<br />
1 − S 11 Γ L<br />
= S 22 − ∆Γ L<br />
1 − S 11 Γ L<br />
, (2.27)<br />
which shows that Γ T Γ out = 1, <strong>and</strong> hence Z T = −Z out . Thus the condition for oscillation<br />
of the term<strong>in</strong>at<strong>in</strong>g network is satisfied. Note that the appropriate S parameters to use <strong>in</strong><br />
the above development are generally the large-signal parameters of the transistor.<br />
Negative<br />
resistance<br />
device<br />
Load<br />
network<br />
(tun<strong>in</strong>g)<br />
Transistor<br />
[S]<br />
Term<strong>in</strong>at<strong>in</strong>g<br />
network<br />
ΓL<br />
ZL<br />
Γ<strong>in</strong><br />
Z<strong>in</strong><br />
Γout<br />
(Zout)<br />
ΓT<br />
(ZT)<br />
Fig. 2.5: Circuit for a two-port transistor oscillator.<br />
17