FGH40N60SFD 600V, 40A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Switching Time [ns]
5500
1000
100
Common Emitter
V CC = 400V, V GE = 15V
I C = 40A
T C = 25 o C
T C = 125 o C
t d(off)
10
0 10 20 30 40 50
Gate Resistance, R G [Ω]
t f
Switching Time [ns]
Figure 14. Turn-on Characteristics vs.
Collector Current
500
100
Common Emitter
V GE = 15V, R G = 10Ω
T C = 25 o C
T C = 125 o C
10
20 40 60 80
Collector Current, I C [A]
t r
t d(on)
FGH40N60SFD 600V, 40A Field Stop IGBT
Figure 15. Turn-off Characteristics vs.
Collector Current
Switching Time [ns]
500
100
Common Emitter
V GE = 15V, R G = 10Ω
T C
= 25 o C
T C
= 125 o C
t d(off)
t f
Figure 16. Switching Loss vs. Gate Resistance
Switching Loss [mJ]
10
1
Common Emitter
V CC = 400V, V GE = 15V
I C = 40A
T C
= 25 o C
T C = 125 o C
E on
E off
10
20 40 60 80
Collector Current, I C [A]
Figure 17. Switching Loss vs. Collector Current
Switching Loss [mJ]
30
10
1
0.1
Common Emitter
V GE
= 15V, R G
= 10Ω
T C
= 25 o C
T C = 125 o C
20 30 40 50 60 70 80
Collector Current, I C [A]
E on
E off
0.3 0.2
0 10 20 30 40 50
Gate Resistance, R G [Ω]
Figure 18. Turn off Switching
SOA Characteristics
Collector Current, IC [A]
200
100
10
Safe Operating Area
V GE = 15V, T C = 125 o C
1
1 10 100 1000
Collector-Emitter Voltage, V CE [V]
FGH40N60SFD Rev. C
6 www.fairchildsemi.com