FGH40N60SFD 600V, 40A Field Stop IGBT

FGH40N60SFD 

600V, 40A Field Stop IGBT 

Features 

• High current capability 

• Low saturation voltage: V CE(sat) =2.3V @ I C = 40A 

• High input impedance 

• Fast switching 

• RoHS compliant 

Applications 

• Induction Heating, UPS, SMPS, PFC 

General Description 

July 2008 

tm 

Using Novel Field Stop IGBT Technology, Fairchild’s new sesries 

of Field Stop IGBTs offer the optimum performance for 

Induction Heating, UPS, SMPS and PFC applications where 

low conduction and switching losses are essential. 

FGH40N60SFD 600V, 40A Field Stop IGBT 

E 

C 

G 

C 

G 

COLLECTOR 

(FLANGE) 

E 

Absolute Maximum Ratings 

Symbol Description Ratings Units 

V CES Collector to Emitter Voltage 600 V 

V GES Gate to Emitter Voltage ± 20 V 

I C 

Collector Current @ T C = 25 o C 80 A 

Collector Current @ T C = 100 o C 40 A 

I CM (1) Pulsed Collector Current @ T C = 25 o C 120 A 

P D 

Maximum Power Dissipation @ T C = 25 o C 290 W 

Maximum Power Dissipation @ T C = 100 o C 116 W 

T J Operating Junction Temperature -55 to +150 o C 

T stg Storage Temperature Range -55 to +150 

o C 

T L 

Maximum Lead Temp. for soldering 

Purposes, 1/8” from case for 5 seconds 

300 o C 

Notes: 

1: Repetitive rating: Pulse width limited by max. junction temperature 

Thermal Characteristics 

Symbol Parameter Typ. Max. Units 

R θJC (IGBT) Thermal Resistance, Junction to Case - 0.43 o C/W 

R θJC (Diode) Thermal Resistance, Junction to Case - 1.45 

o C/W 

R θJA Thermal Resistance, Junction to Ambient - 40 o C/W 

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 

FGH40N60SFD Rev.C

Package Marking and Ordering Information 

Packaging 

Max Qty 

Device Marking Device Package Type Qty per Tube per Box 

FGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea - 

Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted 

Symbol Parameter Test Conditions Min. Typ. Max. Units 

Off Characteristics 

BV CES Collector to Emitter Breakdown Voltage V GE = 0V, I C = 250µA 600 - - V 

∆BV CES 

∆T J 

Temperature Coefficient of Breakdown 

Voltage 

V GE = 0V, I C = 250µA - 0.6 - V/ o C 

I CES Collector Cut-Off Current V CE = V CES , V GE = 0V - - 250 µA 

I GES G-E Leakage Current V GE = V GES , V CE = 0V - - ±400 nA 

On Characteristics 

V GE(th) G-E Threshold Voltage I C = 250µA, V CE = V GE 4.0 5.0 6.5 V 

V CE(sat) 

Collector to Emitter Saturation Voltage 

I C = 40A, V GE = 15V - 2.3 2.9 V 

I C = 40A, V GE = 15V, 

T C = 125 o C 

- 2.5 - V 


Dynamic Characteristics 

C ies Input Capacitance 

- 2110 - pF 

C oes Output Capacitance 

V CE = 30V , V GE = 0V, 

f = 1MHz 

- 200 - pF 

C res Reverse Transfer Capacitance - 60 - pF 

Switching Characteristics 

t d(on) Turn-On Delay Time 

- 25 - ns 

t r Rise Time - 42 - ns 

t d(off) Turn-Off Delay Time V CC = 400V, I C = 40A, 

- 115 - ns 

t f Fall Time R G = 10Ω, V GE = 15V, 

- 27 54 ns 

E on Turn-On Switching Loss 

Inductive Load, T C = 25 o C 

- 1.13 - mJ 

E off Turn-Off Switching Loss - 0.31 - mJ 

E ts Total Switching Loss - 1.44 - mJ 

t d(on) Turn-On Delay Time 

- 24 - ns 

t r Rise Time - 43 - ns 

t d(off) Turn-Off Delay Time V CC = 400V, I C = 40A, 

- 120 - ns 

t f Fall Time R G = 10Ω, V GE = 15V, 

- 30 - ns 

E on Turn-On Switching Loss 

Inductive Load, T C = 125 o C 

- 1.14 - mJ 

E off Turn-Off Switching Loss - 0.48 - mJ 

E ts Total Switching Loss - 1.62 - mJ 

Q g Total Gate Charge 

- 120 - nC 

Q ge Gate to Emitter Charge 

V CE = 400V, I C = 40A, 

V GE = 15V 

- 14 - nC 

Q gc Gate to Collector Charge - 58 - nC 

FGH40N60SFD Rev. C 

2 www.fairchildsemi.com

Electrical Characteristics of the Diode T C = 25°C unless otherwise noted 

Symbol Parameter Test Conditions Min. Typ. Max Units 

V FM Diode Forward Voltage I F = 20A 

T C = 25 o C - 1.95 2.6 

V 

T C = 125 o C - 1.85 - 

t rr Diode Reverse Recovery Time 

T C = 25 o C - 45 - 

ns 

I ES =20A, dI ES /dt = 200A/µs 

T C = 125 o C - 140 - 

Q rr Diode Reverse Recovery Charge 

T C = 25 o C - 75 - 

nC 

T C = 125 o C - 375 - 


FGH40N60SFD Rev.C 


Typical Performance Characteristics 

Figure 1. Typical Output Characteristics 

Collector Current, IC [A] 

120 

T C = 25 o C 

100 

20V 

15V 

80 

12V 

60 

40 

10V 

20 

V GE = 8V 

0 

0.0 1.5 3.0 4.5 6.0 

Collector-Emitter Voltage, V CE [V] 

Figure 2. Typical Output Characteristics 


120 

100 

80 

60 

40 

20 

T C = 125 o C 

20V 

15V 

12V 

10V 

V GE = 8V 

0 

0.0 1.5 3.0 4.5 6.0 



Figure 3. Typical Saturation Voltage 

Characteristics 


80 

60 

40 

20 

Common Emitter 

V GE = 15V 

T C = 25 o C 

T C = 125 o C 

Collector Current, I C 

[A] 

Figure 4. Transfer Characteristics 

120 

80 

40 


V CE = 20V 

T C = 25 o C 

T C = 125 o C 

0 

0 1 2 3 4 


0 

6 8 10 12 13 

Gate-Emitter Voltage,V GE [V] 

Figure 5. Saturation Voltage vs. Case 

Temperature at Variant Current Level 

Collector-Emitter Voltage, VCE [V] 

4.0 

3.5 

3.0 

2.5 

2.0 

1.5 


V GE = 15V 

80A 

40A 

I C = 20A 

1.0 

25 50 75 100 125 

Collector-EmitterCase Temperature, T C [ o C] 


Figure 6. Saturation Voltage vs. V GE 

20 

16 

12 

8 

4 

I C = 20A 



T C = -40 o C 

80A 

0 

4 8 12 16 20 

Gate-Emitter Voltage, V GE [V] 






20 

16 

12 

8 

4 


I C = 20A 

80A 


T C = 25 o C 

0 

4 8 12 16 20 


Figure 9. Capacitance Characteristics 

Capacitance [pF] 

5000 

4000 

3000 

2000 

1000 

C iss 

C oss 

C rss 


V GE = 0V, f = 1MHz 

T C = 25 o C 



20 

16 

12 

8 

4 


I C = 20A 

80A 


T C = 125 o C 

0 

4 8 12 16 20 


Figure 10. Gate charge Characteristics 

Gate-Emitter Voltage, VGE [V] 

15 

12 

9 

6 

3 


T C = 25 o C 

V cc = 100V 

300V 

200V 


0 

0.1 1 10 


Figure 11. SOA Characteristics 

400 

0 

30 0 50 100 150 

Gate Charge, Q g [nC] 

Figure 12. Turn-on Characteristics vs. 

Gate Resistance 

200 

Collector Current, Ic [A] 

100 

10 

1 

0.1 

Single Nonrepetitive 

Pulse T C = 25 o C 

Curves must be derated 

linearly with increase 

in temperature 

10µs 

100µs 

1ms 

10 ms 

0.01 

1 10 100 1000 


DC 

Switching Time [ns] 

100 

t r 

t d(on) 


V CC = 400V, V GE = 15V 

I C = 40A 

T C = 25 o C 

T C = 125 o C 

10 

0 10 20 30 40 50 

Gate Resistance, R G [Ω] 




Figure 13. Turn-off Characteristics vs. 

Gate Resistance 


5500 

1000 

100 


V CC = 400V, V GE = 15V 


T C = 25 o C 

T C = 125 o C 

t d(off) 

10 

0 10 20 30 40 50 


t f 


Figure 14. Turn-on Characteristics vs. 

Collector Current 

500 

100 


V GE = 15V, R G = 10Ω 

T C = 25 o C 

T C = 125 o C 

10 

20 40 60 80 

Collector Current, I C [A] 

t r 

t d(on) 


Figure 15. Turn-off Characteristics vs. 

Collector Current 


500 

100 


V GE = 15V, R G = 10Ω 

T C 

= 25 o C 

T C 

= 125 o C 

t d(off) 

t f 

Figure 16. Switching Loss vs. Gate Resistance 

Switching Loss [mJ] 

10 

1 


V CC = 400V, V GE = 15V 


T C 

= 25 o C 

T C = 125 o C 

E on 

E off 

10 

20 40 60 80 


Figure 17. Switching Loss vs. Collector Current 

Switching Loss [mJ] 

30 

10 

1 

0.1 


V GE 

= 15V, R G 

= 10Ω 

T C 

= 25 o C 

T C = 125 o C 

20 30 40 50 60 70 80 


E on 

E off 

0.3 0.2 

0 10 20 30 40 50 


Figure 18. Turn off Switching 

SOA Characteristics 


200 

100 

10 

Safe Operating Area 

V GE = 15V, T C = 125 o C 

1 

1 10 100 1000 





Figure 19. Forward Characteristics 

Forward Current, IF [A] 

80 

T J = 125 o C 

10 

T J = 25 o C 

T J = 75 o C 

1 

T C = 25 o C 

T C = 75 o C 

T C = 125 o C 

0.2 

0 1 2 3 4 

Forward Voltage, V F [V] 

Reverse Current , I R 

[µA] 

Figure 20. Typical Reverse Current vs. 

Reverse Voltage 

200 

100 

10 

1 

0.1 

T J = 125 o C 

T J = 75 o C 

T J = 25 o C 

0.01 

50 200 400 600 

Reverse Voltage, V R 

[V] 


Figure 21. Stored Charge 

100 

Figure 22. Reverse Recovery Time 

60 

Stored Recovery Charge, Qrr [nC] 

80 

60 

40 

200A/µs 

di/dt = 100A/µs 

Reverse Recovery Time, trr [ns] 

50 

40 

di/dt = 100A/µs 

200A/µs 

20 

5 10 20 30 40 

Forward Current, I F [A] 

30 

5 10 20 30 40 

Forward Current, I F [A] 

Figure 23.Transient Thermal Impedance of IGBT 

1 

Thermal Response [Zthjc] 

0.1 

0.01 

0.5 

0.2 

0.1 

0.05 

0.02 

0.01 

single pulse 

Rectangular Pulse Duration [sec] 

P DM 

t 1 

t 2 

Duty Factor, D = t1/t2 

Peak T j = Pdm x Zthjc + T C 

1E-3 

1E-5 1E-4 1E-3 0.01 0.1 1 



Mechanical Dimensions 

TO-247AB (FKS PKG CODE 001) 


Dimensions in Millimeters 



tm 

tm 

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Rev. I35

FGH40N60SFD 600V, 40A Field Stop IGBT

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