NPN Silicon High-Frequency Transistor BFR96

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
FUNCTIONAL TESTS
Characteristic
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Symbol
Min
Typ
Max
Unit
NF — 2.0 — dB
Maximum Unilateral Gain/Insertion Gain (2)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
|S21| 2
NOTE: 2. GU(max) =
(I –|S11| 2 )(I –|S22| 2 )
GU(max)/
|S21|2
—/12 14.5/13 — dB
GU (max), MAXIMUM UNILATERAL GAIN (dB)
28
24
20
16
12
8
4
VCE = 10 V
IC = 50 mA
0 0
0.2 0.3 0.5 0.7 1 1.5 0.2 0.3 0.5 0.7 1 1.5
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
⎪ S 21 ⎪ 2 , INSERTION GAIN (dB)
28
24
20
16
12
8
4
VCE = 10 V
IC = 50 mA
Figure 1. Maximum Unilateral Gain
versus Frequency
Figure 2. |S21|2 versus Frequency
GU (max), MAXIMUM UNILATERAL GAIN (dB)
22
20
18
14
f = 0.5 GHz
VCE = 10 V
12 0 20 40 60 80
IC, COLLECTOR CURRENT (mA)
Figure 3. Maximum Unilateral Gain versus
Collector Current
f T, GAIN-BANDWIDTH PRODUCT (GHz)
6
5
4
3
f = 0.5 GHz
2 0 20 40 60 80 100
IC, COLLECTOR CURRENT (mA)
VCE = 5 V
10 V
Figure 4. Gain–Bandwidth Product versus
Collector Current
BFR96
2
MOTOROLA RF DEVICE DATA