BUZ 272 - Electronic-engineering.ch

BUZ 272
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1 Pin 2 Pin 3
G D S
Type V DS I D R DS(on) Package Ordering Code
BUZ 272 -100 V -15 A 0.3 Ω TO-220 AB C67078-S1454-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
I D A
T C = 25 ˚C
-15
Pulsed drain current
T C = 25 ˚C
I Dpuls
-60
Avalanche energy, single pulse
E AS mJ
I D = -15 A, V DD = -25 V, R GS = 25 Ω
L = 1.93 mH, T j = 25 ˚C
290
Gate source voltage V GS ± 20 V
Power dissipation
P tot W
T C = 25 ˚C
125
Operating temperature T j -55 ... + 150 ˚C
Storage temperature T stg -55 ... + 150
Thermal resistance, chip case R thJC ≤ 1 K/W
Thermal resistance, chip to ambient R thJA ≤ 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Data Sheet 1 05.99

BUZ 272
Electrical Characteristics, at T j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, I D = -0.25 mA, T j = 25 ˚C
Gate threshold voltage
V GS =V DS, I D = 1 mA
Zero gate voltage drain current
V DS = -100 V, V GS = 0 V, T j = 25 ˚C
V DS = -100 V, V GS = 0 V, T j = 125 ˚C
Gate-source leakage current
V GS = -20 V, V DS = 0 V
Drain-Source on-resistance
V GS = -10 V, I D = -9.5 A
-100 - -
V GS(th)
-2.1 -3 -4
-
-0.1 -1
I DSS
-
-10 -100
I GSS
- -10 -100
R DS(on)
- 0.2 0.3
V
µA
nA
Ω
Data Sheet 2 05.99

BUZ 272
Electrical Characteristics, at T j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V DS ≥ 2 * I D * R DS(on)max, I D = -9.5 A g fs
1.5 4.5 -
Input capacitance
C iss
V GS = 0 V, V DS = -25 V, f = 1 MHz
- 2000 2700
Output capacitance
C oss
V GS = 0 V, V DS = -25 V, f = 1 MHz
- 360 540
Reverse transfer capacitance
C rss
V GS = 0 V, V DS = -25 V, f = 1 MHz
- 120 180
Turn-on delay time
V DD = -30 V, V GS = -10 V, I D = -2.9 A
t d(on)
- 30 45
R GS = 50 Ω
Rise time
t r
V DD = -30 V, V GS = -10 V, I D = -2.9 A
R GS = 50 Ω
- 120 180
Turn-off delay time
V DD = -30 V, V GS = -10 V, I D = -2.9 A
t d(off)
- 125 170
R GS = 50 Ω
Fall time
t f
V DD = -30 V, V GS = -10 V, I D = -2.9 A
R GS = 50 Ω
- 120 160
S
pF
ns
Data Sheet 3 05.99

BUZ 272
Electrical Characteristics, at T j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T C = 25 ˚C
Inverse diode direct current,pulsed
T C = 25 ˚C
Inverse diode forward voltage
V GS = 0 V, I F = -30 A
Reverse recovery time
V R = -30 V, I F =l S, di F /dt = 100 A/µs
Reverse recovery charge
V R = -30 V, I F =l S, di F /dt = 100 A/µs
- - -15
I SM
- - -60
V SD
- -1.15 -1.7
t rr
- 90 -
Q rr
- 0.23 -
A
V
ns
µC
Data Sheet 4 05.99

BUZ 272
Power dissipation
P tot = ƒ(T C )
Drain current
I D = ƒ(T C )
parameter: V GS
≥ -10 V
130
W
110
-16
A
P tot
100
90
I D
-12
80
-10
70
60
-8
50
-6
40
30
-4
20
10
0
0 20 40 60 80 100 120 ˚C 160
T C
-2
0
0 20 40 60 80 100 120 ˚C 160
T C
Safe operating area
I D = ƒ(V DS )
parameter: D = 0.01, T C = 25˚C
-10 2
Transient thermal impedance
Z th JC = ƒ(t p )
parameter: D = t p / T
10 1
t p
= 15.0µs
K/W
A
-10 1
R DS(on) = V DS / I D
10 ms
I D
-10 0 -10 1 -10 2
100 µs
10 0
1 ms
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10 0
DC
V
10 -3
Z thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
single pulse
s
V DS
t p
Data Sheet 5 05.99

BUZ 272
Typ. output characteristics
I D = ƒ(V DS )
parameter: t p = 80 µs
Typ. drain-source on-resistance
R DS (on) = ƒ(I D )
parameter: V GS
I D
-34
A
-28
-24
-20
-16
-12
-8
P tot = 125W
l
V GS
[V]
a -4.0
b -4.5
c -5.0
d -5.5
d
-4
c
b
a
0
0 -4 -8 -12 -16 -20 V -28
V DS
k
g
e
j
f
e -6.0
f -6.5
i
g -7.0
h -7.5
h
i -8.0
j -9.0
k -10.0
l -20.0
0.9
Ω
R DS (on) 0.7
0.6
0.5
0.4
0.3
0.2
V
0.1
GS [V] =
a b
-4.0 -4.5 -5.0
0.0
a
b
c
d
c
-5.5
e
d
-6.0
f
e
-6.5
g
f
-7.0
g
-7.5
0 -4 -8 -12 -16 -20 A -28
I D
h
h
-8.0
i
i
-9.0
j
-10.0
j
k
k
-20.0
Typ. transfer characteristics I D = f (V GS )
parameter: t p = 80 µs
V DS ≥2 x I D x R DS(on)max
Typ. forward transconductance g fs = f (I D )
parameter: t p = 80 µs,
V DS ≥2 x I D x R DS(on)max
-16
7.0
S
A
6.0
I D g fs 5.5
-12
5.0
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
V GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 -2 -4 -6 -8 -10 -12 A -15
I D
Data Sheet 6 05.99

BUZ 272
Drain-source on-resistance
R DS (on) = ƒ(T j )
parameter: I D = -9.5 A, V GS = -10 V
Gate threshold voltage
V GS (th) = ƒ(T j )
parameter: V GS = V DS , I D = 1 mA
0.9
Ω
R DS (on) 0.7
-4.6
V
-4.0
-3.6
98%
0.6
-3.2
typ
0.5
0.4
98%
-2.8
-2.4
-2.0
V GS(th)
-60 -20 20 60 100 ˚C 160
2%
0.3
0.2
0.1
typ
0.0
-60 -20 20 60 100 ˚C 160
T j
-1.6
-1.2
-0.8
-0.4
0.0
T j
Typ. capacitances
C = f (V DS )
parameter:V GS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
I F = ƒ(V SD )
parameter: T j , t p = 80 µs
-10 2
nF
A
C
C iss
10 0
C oss
10 -1
C rss
-10 0
I F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
-10 1
T j = 25 ˚C typ
T j = 150 ˚C typ
T j = 25 ˚C (98%)
T j = 150 ˚C (98%)
10 -2
0 -5 -10 -15 -20 -25 -30 V -40
V DS
-10 -1
V SD
Data Sheet 7 05.99

BUZ 272
Avalanche energy E AS = ƒ(T j )
parameter: I D = -15 A, V DD = -25 V
R GS = 25 Ω, L = 1.93 mH
Drain-source breakdown voltage
V (BR)DSS = ƒ(T j )
300
mJ
-120
V
E AS
240
220
200
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 ˚C 160
T j
V (BR)DSS
-114
-112
-110
-108
-106
-104
-102
-100
-98
-96
-94
-92
-90
-60 -20 20 60 100 ˚C 160
T j
Data Sheet 8 05.99