A 90 nm Communication Technology Featuring SiGe HBT ...
A 90 nm Communication Technology Featuring SiGe HBT ...
A 90 nm Communication Technology Featuring SiGe HBT ...
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Conclusions<br />
• Manufacturable communications process<br />
integrated into <strong>90</strong><strong>nm</strong> digital CMOS<br />
• RF NMOS devices at 225/140 F T /F<br />
• RF PMOS devices at 114/70 F T /F<br />
/F MAX<br />
/F MAX<br />
• Baseline <strong>HBT</strong> device at 130/100 F T /F<br />
/F MAX<br />
• Reliable 1.15 fF/mm 2 Cu-MIM and resistor<br />
• Hi-Q Q inductors<br />
IEDM 2002 38