Si6875DQ Dual P-Channel 20-V (D-S) MOSFET, Common Drain

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Si6875DQVishay SiliconixNew Product Parameter Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V GS(th) V DS = V GS , I D = –250 A –0.45 VGate-Body Leakage I GSSV DS = 0 V, V GS = 8 V 100 nAZero Gate Voltage Drain Current IV DS = –16 V, V GS = 0 V –1DSSV DS = –16 V, V GS = 0 V, T J = 70C –25AOn-State Drain Current a I D(on) V DS = –5 V, V GS = –4.5 V –20 AV GS = –4.5 V, I D = –6.4 A 0.022 0.027Drain-Source On-State Resistance a r DS(on) V GS = –2.5 V, I D = –5.5 A 0.029 0.036V GS = –1.8 V, I D = –4.6 A 0.042 0.052 Forward Transconductance a g fs V DS = –5 V, I D = –6.4 A 19 SDiode Forward Voltage a V SD I S = –1.6 A, V GS = 0 V –0.70 –1.1 VDynamic bTotal Gate Charge Q g 26 36Gate-Source Charge Q gs V DS = –10 V, V GS = –4.5 V, I D = –6.4 A 4.6 nCGate-Drain Charge Q gd 5.9Turn-On Delay Time t d(on)Rise Time t r V VDD = –10 V, R L = 10 Turn-Off Delay Time t I d(off) D –1 A, V GEN = –4.5 V, R G = 6 26 4027 40170 250 nsFall Time t f 75 110Source-Drain Reverse Recovery Time t rr I F = –1.6 A, di/dt = 100 A/s 30 50Notesa. Pulse test; pulse width 300 s, duty cycle 2%.b. Guaranteed by design, not subject to production testing. 30Output Characteristics30Transfer Characteristics24V GS = 5 thru 2.5 V2 V24T C = –55C25C– Drain Current (A)I D181261.5 V– Drain Current (A)I D18126125C0.5, 1 V00 3 6 9 12V DS – Drain-to-Source Voltage (V)00 0.5 1.0 1.5 2.0 2.5V GS – Gate-to-Source Voltage (V)www.vishay.com FaxBack 408-970-56002-2Document Number: 71230S-01235—Rev. A, 12-Jun-00
New ProductSi6875DQVishay Siliconix 0.10On-Resistance vs. Drain Current4000Capacitancer DS(on) – On-Resistance ( )0.080.060.040.02V GS = 1.8 VV GS = 2.5 VV GS = 4.5 VC – Capacitance (pF)350030002500200015001000500C ossC iss00 6 12 18 24 30I D – Drain Current (A)C rss00 4 8 12 16 20V DS – Drain-to-Source Voltage (V)5Gate Charge1.6On-Resistance vs. Junction Temperature– Gate-to-Source Voltage (V)V GS4321V DS = 10 VI D = 6.4 Ar DS(on) – On-Resistance ( )(Normalized)1.41.21.00.8V GS = 4.5 VI D = 6.4 A00 6 12 18 24 30Q g – Total Gate Charge (nC)0.6–50 –25 0 25 50 75 100 125 150T J – Junction Temperature (C)30Source-Drain Diode Forward Voltage0.08On-Resistance vs. Gate-to-Source Voltage– Source Current (A)I S10T J = 150CT J = 25Cr DS(on) – On-Resistance ( )0.060.040.02I D = 6.4 A10 0.2 0.4 0.6 0.8 1.0 1.2 1.4V SD – Source-to-Drain Voltage (V)00 2 4 6 8V GS – Gate-to-Source Voltage (V)Document Number: 71230S-01235—Rev. A, 12-Jun-00www.vishay.com FaxBack 408-970-56002-3
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Si6875DQ Dual P-Channel 20-V (D-S) MOSFET, Common Drain

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