Si6875DQ Dual P-Channel 20-V (D-S) MOSFET, Common Drain
Si6875DQ Dual P-Channel 20-V (D-S) MOSFET, Common Drain
Si6875DQ Dual P-Channel 20-V (D-S) MOSFET, Common Drain
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
<strong>Si6875DQ</strong>Vishay SiliconixNew Product 0.5Threshold Voltage100Single Pulse Power, Junction-to-Ambient0.480Variance (V)V GS(th)0.30.<strong>20</strong>.10.0I D = 250 APower (W)6040–0.1<strong>20</strong>–0.2–50 –25 0 25 50 75 100 125 15000.0010.010.1 110T J – Temperature (C)Time (sec)2Normalized Thermal Transient Impedance, Junction-to-AmbientNormalized Effective TransientThermal Impedance1Duty Cycle = 0.50.2Notes:0.10.1P DM0.05t 1t 2 t 10.021. Duty Cycle, D =t 22. Per Unit Base = R thJA = 85C/W3. T JM – T A = P DM Z (t) thJASingle Pulse4. Surface Mounted0.0110 –4 10 –3 10 –2 10 –11 10 100600Square Wave Pulse Duration (sec)2Normalized Thermal Transient Impedance, Junction-to-FootNormalized Effective TransientThermal Impedance10.1Duty Cycle = 0.50.<strong>20</strong>.10.050.02Single Pulse0.0110 –410 –3 10 –2 10 –11 10Square Wave Pulse Duration (sec)www.vishay.com FaxBack 408-970-56002-4Document Number: 71230S-01235—Rev. A, 12-Jun-00
Change language