DS18S20 High-Precision 1-Wire Digital Thermometer

ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to GroundOperating Temperature RangeStorage Temperature RangeSolder TemperatureReflow Oven Temperature-0.5V to +6.0V-55C to +125C-55C to +125CSee IPC/JEDEC J-STD-020A+220°CDS18S20*These are stress ratings only and functional operation of the device at these or any other conditionsabove those indicated in the operation sections of this specification is not implied. Exposure to absolutemaximum rating conditions for extended periods of time may affect reliability.DC ELECTRICAL CHARACTERISTICS20 of 22(-55°C to +125°C; V DD = 3.0V to 5.5V)PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTESSupply Voltage V DD Local Power +3.0 +5.5 V 1Pullup SupplyV PU Parasite Power +3.0 +5.5 V 1, 2VoltageLocal Power +3.0 V DDThermometer Error t ERR -10°C to+85°C±0.5 °C 3-55°C to±2+125°CInput Logic Low V IL -0.3 +0.8 V 1, 4, 5Input Logic High V IH Local PowerParasite Power+2.2+3.0The lower of5.5orV DD + 0.3V 1, 6Sink Current I L V I/O =0.4V 4.0 mA 1Standby Current I DDS 750 1000 nA 7, 8Active Current I DD V DD =5V 1 1.5 mA 9DQ Input Current I DQ 5 µA 10Drift ±0.2 °C 11NOTES:1) All voltages are referenced to ground.2) The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore thehigh level of the pullup is equal to V PU . In order to meet the V IH spec of the DS18S20, the actualsupply rail for the strong pullup transistor must include margin for the voltage drop across thetransistor when it is turned on; thus: V PU_ACTUAL = V PU_IDEAL + V TRANSISTOR .3) See typical performance curve in Figure 164) Logic low voltages are specified at a sink current of 4mA.5) To guarantee a presence pulse under low voltage parasite power conditions, V ILMAX may have to bereduced to as low as 0.5V.6) Logic high voltages are specified at a source current of 1mA.7) Standby current specified up to 70C. Standby current typically is 3A at 125C.8) To minimize I DDS , DQ should be within the following ranges: GND DQ GND + 0.3V or V DD –0.3V DQ V DD .9) Active current refers to supply current during active temperature conversions or EEPROM writes.10) DQ line is high (“hi-Z” state).11) Drift data is based on a 1000 hour stress test at 125°C with V DD = 5.5V.