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Reflective Optical Sensor with Transistor Output

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CNY70Vishay Semiconductors<strong>Output</strong> (Detector)Parameter Test condition Symbol Value UnitCollector emitter voltage V CEO 32 VEmitter collector voltage V ECO 7 VCollector current I C 50 mAPower dissipation T amb ≤ 25 °C P V 100 mWJunction temperature T j 100 °CElectrical CharacteristicsT amb = 25 °C, unless otherwise specifiedCouplerParameter Test condition Symbol Min Typ. Max UnitCollector currentV CE = 5 V, I F = 20 mA,1)I C0.3 1.0 mAd = 0.3 mm (figure 1)Cross talk current V CE = 5 V, I F = 20 mA (figure 1) 2)I CX600 nACollector emitter saturationvoltageI F = 20 mA, I C = 0.1 mA,d = 0.3 mm (figure 1)V CEsat1) 0.3 V1) Measured <strong>with</strong> the ‘Kodak neutral test card", white side <strong>with</strong> 90 % diffuse reflectance2) Measured <strong>with</strong>out reflecting mediumInput (Emitter)Parameter Test condition Symbol Min Typ. Max UnitForward voltage I F = 50 mA V F 1.25 1.6 V<strong>Output</strong> (Detector)Parameter Test condition Symbol Min Typ. Max UnitCollector emitter voltage I C = 1 mA V CEO 32 VEmitter collector voltage I E = 100 µA V ECO 5 VCollector dark current V CE = 20 V, I f = 0, E = 0 I CEO 200 nAwww.vishay.com2Document Number 83751Rev. 1.6, 13-Jun-06

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