Electrical characterisation of Transistors - Stallinga.org
Electrical characterisation of Transistors - Stallinga.org
Electrical characterisation of Transistors - Stallinga.org
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Carrier scattering within the grain boundary region can be lumpedinto the effective mobility modelPseudo-Subthreshold CharacteristicsGrain Boundry regionGrain barrierlowering effectsSiO 2In poly-Si TFTThe exponential dependence <strong>of</strong> the drian current on the gate voltage isdue to the gate induced grain barrier lowering effects, and not due tothe accumulation charge density modulated by the gate as the singleSi-MOSFET does
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