Electrical characterisation of Transistors - Stallinga.org

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Carrier scattering within the grain boundary region can be lumpedinto the effective mobility modelPseudo-Subthreshold CharacteristicsGrain Boundry regionGrain barrierlowering effectsSiO 2In poly-Si TFTThe exponential dependence of the drian current on the gate voltage isdue to the gate induced grain barrier lowering effects, and not due tothe accumulation charge density modulated by the gate as the singleSi-MOSFET does
Mechanisms for the GIDL current‣ Oxide charges shifts the flat-band voltage andresults in an enchanced of the GIDL current.‣ Generation of interface states may introduceadditional band-trap-band leakage mechanisms
Page 1 and 2: Electrical characterisation ofTrans
Page 3 and 4: • Device performance.Outline• C
Page 6 and 7: DLTS ExperimentsVg=-20 V0.8Vg=0V-Id
Page 9 and 10: The effect on the device characteri
Page 11 and 12: Negative VgWhat we knowHigher thres
Page 13 and 14: Device relaxation (time constants)A
Page 15 and 16: Relaxation from an annealed state t
Page 17 and 18: Temperature dependence of the drain
Page 19 and 20: -16Nit=1.4x10 -11 cm -2 .FT17.MLn (
Page 21: FT21.M1.2 x 10-7 Gate Voltage (V)Vs
Page 25 and 26: Thermally Stimulated Currents (TSC)

Electrical characterisation of Transistors - Stallinga.org

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