Electrical characterisation of Transistors - Stallinga.org

More documents

Recommendations

Info

DLTS ExperimentsVg=-20 V0.8Vg=0V-Ids(A)0.60.4VDS=-0.5Vn-Si0.21 x 10-6 -Vds (V)Bulk traps N bs(E)Interface traps N is(E)00 2 4 6 8S( t)= A0−A1−NNTD1[ 1−exp( −t/ τ )]S( t)= A0 − A 1−exp( −t/ τ )The transient has not anexponential decayOverlap of responses times from several close traps.Large density of traps.Different traps in different regions of the device.20
DLTS Experiments4.5 x 10-11 Temperature (K)4DLTS Signal (Arb. Unit)3.532.52t1/t2 (sec)5/25Vds=-0.5 VVg=from -20 V to 0 V1.51190 200 210 220 230 240 250 260 270 280 290DLTS spectra of drain-current transients due to gate biaspulse from –20V to 0 V.
Page 1 and 2: Electrical characterisation ofTrans
Page 3 and 4: • Device performance.Outline• C
Page 9 and 10: The effect on the device characteri
Page 11 and 12: Negative VgWhat we knowHigher thres
Page 13 and 14: Device relaxation (time constants)A
Page 15 and 16: Relaxation from an annealed state t
Page 17 and 18: Temperature dependence of the drain
Page 19 and 20: -16Nit=1.4x10 -11 cm -2 .FT17.MLn (
Page 21 and 22: FT21.M1.2 x 10-7 Gate Voltage (V)Vs
Page 23 and 24: Mechanisms for the GIDL current‣
Page 25 and 26: Thermally Stimulated Currents (TSC)

Electrical characterisation of Transistors - Stallinga.org

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?